2N7000RLRPG N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The 2N7000RLRPG is an N-Channel MOSFET manufactured by onsemi, rated for 60V drain-to-source voltage with 200mA continuous drain current in a TO-92-3 through-hole package. This device is classified as obsolete product status. Equivalent and substitute parts are necessary to maintain design continuity and ensure component availability for new production runs, repairs, and legacy system support. Substitute devices must maintain electrical compatibility across critical parameters including voltage rating, current capacity, on-resistance characteristics, and thermal performance while accommodating packaging and sourcing variations.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—
Drain to Source Voltage (Vdss)	60	V
Current - Continuous Drain (Id) @ 25°C	200	mA
Rds On (Max) @ Id, Vgs	5	Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id	3	V @ 1mA
Vgs (Max)	±20	V
Input Capacitance (Ciss) (Max) @ Vds	60	pF @ 25V
Power Dissipation (Max)	350	mW (Tc)
Operating Temperature	-55 to 150	°C (TJ)
Mounting Type	Through Hole	—
Package / Case	TO-226-3, TO-92-3	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution logic for the 2N7000RLRPG is based on electrical parameter equivalence and mechanical compatibility. The critical parameters determining substitutability are:

Electrical Equivalence Criteria:

Drain to Source Voltage (Vdss): Must equal or exceed 60V
Continuous Drain Current (Id): Must equal or exceed 200mA at 25°C
On-Resistance (Rds On): Must not exceed 5 Ohm @ 500mA, 10V
Gate Threshold Voltage (Vgs(th)): Must not exceed 3V @ 1mA
Gate Voltage Rating (Vgs): Must accommodate ±20V minimum
Input Capacitance (Ciss): Typically 50-60 pF @ 25V
Operating Temperature Range: Must support -55°C to 150°C

Mechanical Compatibility Criteria:

Mounting Type: Through Hole required
Package Type: TO-92-3 or TO-226-3 compatible pinout
Lead Configuration: Formed leads acceptable

Substitute parts are grouped into two categories: Direct Electrical Equivalents (matching all primary electrical specifications) and Enhanced Performance Alternatives (exceeding minimum specifications in current capacity or power dissipation while maintaining voltage and on-resistance ratings).

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (mA)	Rds On Max (Ohm)	Vgs(th) Max (V)	Vgs Max (V)	Ciss Max (pF)	Power Diss (mW)	Temp Range (°C)	Package	Product Status
2N7000RLRPG	onsemi	60	200	5	3	±20	60	350	-55 to 150	TO-92-3	Obsolete
2N7000	Diotec Semiconductor	60	200	5	3	±20	60	350	-55 to 150	TO-92-3	Active
2N7000-D26Z	onsemi	60	200	5	3	±20	50	400	-55 to 150	TO-92-3	Active
2N7000-D74Z	onsemi	60	200	5	3	±20	50	400	-55 to 150	TO-92-3	Active
2N7000-D75Z	onsemi	60	200	5	3	±20	50	400	-55 to 150	TO-92-3	Active
2N7000BU	onsemi	60	200	5	3	±20	50	400	-55 to 150	TO-92-3	Active
2N7000TA	onsemi	60	200	5	3	±20	50	400	-55 to 150	TO-92-3	Active
2N7000-G	Microchip Technology	60	200	5	3	±30	60	1000	-55 to 150	TO-92-3	Active
VN10LP	Diodes Incorporated	60	270	5	2.5	±20	60	625	-55 to 150	TO-92-3	Active
VN10LPSTZ	Diodes Incorporated	60	270	5	2.5	±20	60	625	-55 to 150	E-Line (TO-92 compatible)	Active
ZVN3306A	Diodes Incorporated	60	270	5	2.4	±20	35	625	-55 to 150	TO-92-3	Active

Engineering Selection Recommendations

Primary Substitutes (Direct Electrical Equivalents):

The 2N7000-D26Z, 2N7000-D74Z, 2N7000-D75Z, 2N7000BU, and 2N7000TA from onsemi are direct substitutes for the 2N7000RLRPG. These parts maintain identical electrical specifications across all critical parameters (Vdss, Id, Rds On, Vgs(th), Vgs Max) and operate across the same temperature range. The primary differences are packaging format (Cut Tape or Bulk) and enhanced power dissipation ratings (400mW versus 350mW). All onsemi variants carry ROHS3 compliance and REACH Unaffected status, ensuring regulatory alignment with modern manufacturing standards.

The 2N7000 from Diotec Semiconductor provides electrical equivalence with identical specifications and active product status. This option is suitable for applications where manufacturer diversification is acceptable.

Enhanced Performance Alternatives:

The 2N7000-G from Microchip Technology exceeds the original specification with 1W power dissipation capability and ±30V gate voltage rating while maintaining all other electrical parameters. This variant is appropriate for designs requiring additional thermal margin or higher gate voltage tolerance.

The VN10LP and VN10LPSTZ from Diodes Incorporated offer enhanced continuous drain current (270mA versus 200mA) and higher power dissipation (625mW versus 350mW). These devices maintain the 60V voltage rating and 5 Ohm on-resistance specification. The VN10LP is available in standard TO-92-3 packaging, while VN10LPSTZ uses E-Line (TO-92 compatible) packaging. Both carry ROHS3 compliance and REACH Unaffected status.

The ZVN3306A from Diodes Incorporated provides 270mA drain current with 625mW power dissipation and features lower input capacitance (35pF) compared to the original specification. This device is suitable for high-frequency switching applications where reduced capacitance is beneficial.

Compliance and Regulatory Considerations:

All recommended active substitutes carry ROHS3 compliance and REACH Unaffected status, ensuring compatibility with current environmental and regulatory requirements. The original 2N7000RLRPG carries REACH Unaffected status and MSL 1 (Unlimited) moisture sensitivity rating. All substitute parts maintain equivalent or superior moisture sensitivity classifications.

Frequently Asked Questions (FAQ)

Q: Can I directly replace the 2N7000RLRPG with any of the listed substitutes?

A: Yes, all listed active substitutes maintain electrical compatibility across the critical parameters: 60V Vdss, 200mA minimum continuous drain current, 5 Ohm maximum on-resistance, and -55°C to 150°C operating temperature range. Physical pinout compatibility is maintained for TO-92-3 and TO-226-3 packages. The VN10LPSTZ uses E-Line packaging which is TO-92 compatible but may require mechanical verification for specific PCB layouts.

Q: What is the difference between the onsemi variants (2N7000-D26Z, 2N7000-D74Z, 2N7000-D75Z, 2N7000BU, 2N7000TA)?

A: These variants are electrically identical to each other and to the original 2N7000RLRPG. The differences are in packaging format and distribution channel. 2N7000-D26Z, 2N7000-D74Z, and 2N7000-D75Z are supplied in Cut Tape format. 2N7000BU is supplied in Bulk packaging. 2N7000TA is supplied in Cut Tape format. All feature 400mW power dissipation versus the original 350mW rating, providing additional thermal margin.

Q: Should I use VN10LP or VN10LPSTZ if I need higher current capacity?

A: Both VN10LP and VN10LPSTZ provide 270mA continuous drain current, exceeding the 200mA specification of the 2N7000RLRPG. VN10LP is supplied in Bulk packaging with standard TO-92-3 case. VN10LPSTZ is supplied in Tape & Box format with E-Line (TO-92 compatible) packaging. Select based on your packaging and distribution requirements. Both maintain 60V Vdss and 5 Ohm on-resistance specifications.

Q: Is the 2N7000-G from Microchip a suitable replacement?

A: Yes, the 2N7000-G is electrically compatible with the 2N7000RLRPG across all critical parameters. It offers enhanced specifications including 1W power dissipation (versus 350mW) and ±30V gate voltage rating (versus ±20V). This device is appropriate when additional thermal headroom or higher gate voltage tolerance is required. It carries ROHS3 compliance and REACH Unaffected status.

Q: What is the significance of the input capacitance (Ciss) differences between substitutes?

A: Input capacitance affects switching speed and gate drive requirements. The original 2N7000RLRPG specifies 60pF @ 25V. Most onsemi variants (2N7000-D26Z, 2N7000-D74Z, 2N7000-D75Z) specify 50pF, which is lower and may result in slightly faster switching. The ZVN3306A specifies 35pF, providing the lowest capacitance for high-frequency applications. VN10LP and VN10LPSTZ maintain 60pF. Select based on your circuit's switching frequency and gate drive capability.

Q: Are all substitutes RoHS compliant?

A: All active substitute parts listed carry ROHS3 compliance. The original 2N7000RLRPG does not specify RoHS status in the provided data. All substitutes are suitable for applications requiring RoHS compliance.

Q: Can I use ZVN3306A as a direct replacement?

A: Yes, the ZVN3306A is electrically compatible with the 2N7000RLRPG. It maintains 60V Vdss, 270mA continuous drain current, and 5 Ohm on-resistance. The primary differences are lower input capacitance (35pF versus 60pF) and lower gate threshold voltage (2.4V versus 3V maximum). These characteristics make it suitable for high-frequency switching applications where reduced capacitance is beneficial.

Q: What packaging options are available for substitutes?

A: Substitute parts are available in multiple packaging formats: Cut Tape (CT), Bulk, Tape & Box (TB), and Bag. All maintain through-hole mounting with TO-92-3 or TO-92 compatible pinouts. The VN10LPSTZ uses E-Line packaging which is TO-92 compatible. Select packaging based on your procurement and assembly requirements.

Q: Why is the original 2N7000RLRPG listed as obsolete?

A: The 2N7000RLRPG is classified as obsolete product status, indicating it is no longer manufactured or supported by onsemi. Multiple active alternatives with identical or enhanced specifications are available from onsemi and other manufacturers, ensuring design continuity and component availability for new production and legacy system support.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message