2N7000BU_T N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The 2N7000BU_T is an N-Channel MOSFET manufactured by onsemi, rated for 60V drain-to-source voltage with 200mA continuous drain current in a through-hole TO-92-3 package. This device is classified as obsolete, making identification of active equivalent parts essential for ongoing design support and procurement continuity. Substitute parts must maintain electrical compatibility across voltage ratings, current specifications, and thermal characteristics while accommodating modern supply chain availability.

Substiute Parts

2N7000BU_T

onsemiIn Stock: 8542N7000BU_T Datasheet

Current PartRFQ

2N7000-G

Microchip TechnologyIn Stock: 36132N7000-G Datasheet

DirectRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the 2N7000BU_T is determined by strict equivalence across the following electrical and mechanical parameters:

Electrical Compatibility Criteria:

• FET Type: N-Channel topology
• Technology: MOSFET (Metal Oxide) construction
• Drain to Source Voltage (Vdss): 60V minimum rating
• Continuous Drain Current (Id): 200mA minimum at 25°C
• On-State Resistance (Rds On): 5 Ohm maximum @ 500mA, 10V gate-source voltage
• Gate Threshold Voltage (Vgs(th)): 3V maximum @ 1mA drain current
• Operating Temperature Range: -55°C to 150°C (TJ)

Mechanical Compatibility Criteria:

• Mounting Type: Through Hole
• Package: TO-92-3 (TO-226AA)

The 2N7000-G manufactured by Microchip Technology satisfies all electrical and mechanical substitution requirements while offering active product status and improved compliance certifications.

Parameter Comparison

Engineering Selection Recommendations

The 2N7000-G from Microchip Technology is a direct functional substitute for the obsolete 2N7000BU_T. Selection is based on the following engineering factors:

Electrical Equivalence: All critical electrical parameters—Vdss, Id, Rds On, and Vgs(th)—are identical between the two devices. The 2N7000-G provides higher maximum gate voltage (±30V versus ±20V) and greater power dissipation capability (1W versus 400mW), both of which represent improvements over the original specification without introducing incompatibility.

Package Compatibility: Both devices utilize the TO-92-3 (TO-226AA) through-hole package, ensuring direct mechanical substitution in existing PCB layouts without modification.

Product Status and Compliance: The 2N7000-G maintains active product status, ensuring long-term availability and supply chain stability. The device is RoHS3 compliant and REACH unaffected, meeting modern regulatory requirements. Both devices carry EAR99 export classification.

Thermal Considerations: The 2N7000-G demonstrates superior thermal performance with 1W maximum power dissipation compared to 400mW for the 2N7000BU_T, providing additional design margin in thermally constrained applications.

Frequently Asked Questions (FAQ)

Q: Can the 2N7000-G directly replace the 2N7000BU_T without circuit modification?

A: Yes. The 2N7000-G is electrically and mechanically equivalent across all critical parameters. The device occupies the same TO-92-3 package footprint and exhibits identical electrical characteristics for Vdss, Id, Rds On, and Vgs(th). No circuit modifications are required.

Q: What is the significance of the higher Vgs (Max) rating on the 2N7000-G?

A: The 2N7000-G supports ±30V gate-source voltage compared to ±20V on the 2N7000BU_T. This represents an enhancement that provides additional design margin for gate drive circuits. Applications operating within the original ±20V specification remain fully compatible.

Q: How does the increased power dissipation rating of the 2N7000-G affect thermal design?

A: The 2N7000-G is rated for 1W maximum power dissipation versus 400mW for the 2N7000BU_T. This improvement allows operation at higher current levels or duty cycles without exceeding thermal limits. Existing thermal designs based on the 400mW specification will operate with additional margin.

Q: Are there any differences in input capacitance between these devices?

A: The 2N7000-G exhibits 60pF maximum input capacitance (Ciss) compared to 50pF for the 2N7000BU_T, both measured at 25V drain-source voltage. This 10pF difference is within acceptable tolerance for most switching applications and does not affect functional compatibility.

Q: What is the packaging difference between the two devices?

A: Both devices are supplied in the TO-92-3 (TO-226AA) through-hole package. The 2N7000-G is supplied in bag packaging, while the 2N7000BU_T was supplied without specified packaging. This difference does not affect electrical or mechanical compatibility.

Q: Why is the 2N7000BU_T classified as obsolete?

A: The 2N7000BU_T has reached end-of-life status with onsemi. The 2N7000-G from Microchip Technology maintains active production status and serves as the recommended substitute for new designs and ongoing procurement.

Q: Are there any compliance or regulatory differences between these devices?

A: The 2N7000-G is RoHS3 compliant with Moisture Sensitivity Level 1 (Unlimited), providing enhanced compliance documentation. Both devices are REACH unaffected and carry EAR99 export classification. The 2N7000-G offers superior regulatory alignment with current standards.