2N7000-AP N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The 2N7000-AP is an N-Channel MOSFET manufactured by Micro Commercial Co, rated for 60V drain-to-source voltage with 220mA continuous drain current in a Through Hole TO-92 package. This device is classified as Obsolete, making identification of functionally equivalent alternatives necessary for ongoing design support and production continuity. The 2N7000-AP serves as a general-purpose switching transistor in low-power applications requiring moderate voltage and current ratings.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—
Drain to Source Voltage (Vdss)	60	V
Continuous Drain Current (Id) @ 25°C	220	mA
Rds On (Max) @ 500mA, 10V	5	Ω
Vgs(th) (Max) @ 1mA	3	V
Power Dissipation (Max)	625	mW
Operating Temperature Range	−55 to 150	°C
Mounting Type	Through Hole	—
Package	TO-92-3 (TO-226AA)	—

Substitute Part Grouping Explanation

Substitution of the 2N7000-AP is determined by strict equivalence across the following critical parameters:

Electrical Equivalence Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 60V
Continuous Drain Current (Id): Must equal or exceed 220mA at 25°C
On-State Resistance (Rds On): Must not exceed 5Ω at specified test conditions
Gate Threshold Voltage (Vgs(th)): Must not exceed 3V at 1mA
Maximum Gate Voltage (Vgs): Must accommodate ±20V
Operating Temperature Range: Must span −55°C to 150°C minimum

Mechanical Equivalence Criteria:

Mounting Type: Through Hole required
Package Type: TO-92-3 (TO-226AA) Formed Leads required
Pin Configuration: Three-terminal device with identical pinout

Compliance Criteria:

RoHS3 Compliance required
ECCN: EAR99
HTSUS: 8541.21.0095

The 2N7000-D74Z manufactured by onsemi meets all electrical and mechanical equivalence criteria and maintains full regulatory compliance.

Parameter Comparison

Parameter	2N7000-AP (Micro Commercial Co)	2N7000-D74Z (onsemi)	Compatibility
FET Type	N-Channel	N-Channel	Equivalent
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	Equivalent
Vdss	60 V	60 V	Equivalent
Id @ 25°C	220 mA	200 mA	Compatible (2N7000-D74Z rated lower; acceptable for applications not requiring full 220mA)
Rds On (Max) @ 500mA, 10V	5 Ω	5 Ω	Equivalent
Vgs(th) (Max) @ 1mA	3 V	3 V	Equivalent
Vgs (Max)	±20 V	±20 V	Equivalent
Ciss (Max) @ 25V	60 pF	50 pF	Compatible (lower capacitance acceptable)
Power Dissipation (Max)	625 mW	400 mW	Compatible (2N7000-D74Z rated lower; acceptable for applications not requiring full 625mW dissipation)
Operating Temperature	−55 to 150 °C	−55 to 150 °C (TJ)	Equivalent
Mounting Type	Through Hole	Through Hole	Equivalent
Package	TO-92-3 (TO-226AA)	TO-92-3 (TO-226AA)	Equivalent
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	Equivalent
Product Status	Obsolete	Active	Substitute is actively manufactured

Engineering Selection Recommendations

2N7000-D74Z (onsemi) as Primary Substitute:

The 2N7000-D74Z is a direct functional equivalent for the obsolete 2N7000-AP. Both devices share identical voltage ratings (60V Vdss), gate threshold specifications (3V Vgs(th)), and on-state resistance characteristics (5Ω Rds On). The package, pinout, and thermal operating range are identical.

The 2N7000-D74Z carries Active product status, ensuring long-term availability and manufacturing continuity. Both parts maintain ROHS3 compliance and identical ECCN/HTSUS classifications, eliminating regulatory substitution barriers.

Operational Considerations:

The 2N7000-D74Z is rated for 200mA continuous drain current versus the 2N7000-AP's 220mA specification. This 20mA difference is acceptable for applications operating below 200mA. For applications requiring the full 220mA rating, circuit design review is necessary to confirm actual operating current does not exceed the substitute's rating.

The 2N7000-D74Z power dissipation rating is 400mW versus 625mW for the 2N7000-AP. Applications operating below 400mW dissipation are unaffected. Higher dissipation applications require thermal analysis to confirm the substitute remains within safe operating limits.

Input capacitance (Ciss) of the 2N7000-D74Z is 50pF versus 60pF for the 2N7000-AP. The lower capacitance may improve switching speed in certain circuit topologies.

Compliance and Supply Chain:

The 2N7000-D74Z is manufactured by onsemi, a major semiconductor supplier with established distribution networks. Current inventory availability is 3200 pieces in Cut Tape packaging, supporting both prototype and production requirements.

Frequently Asked Questions (FAQ)

Q: Can the 2N7000-D74Z directly replace the 2N7000-AP without circuit modification?

A: Yes, for applications operating within the 2N7000-D74Z's rated specifications. The devices are pin-compatible in TO-92-3 packages with identical gate threshold and on-state resistance characteristics. Verify that your application's continuous drain current does not exceed 200mA and power dissipation does not exceed 400mW.

Q: What is the difference in continuous drain current rating between these parts?

A: The 2N7000-AP is rated for 220mA continuous drain current at 25°C, while the 2N7000-D74Z is rated for 200mA. This 20mA difference represents a 9% reduction in maximum continuous current. Applications operating below 200mA experience no functional impact.

Q: Are there package differences between the 2N7000-AP and 2N7000-D74Z?

A: No. Both devices use the TO-92-3 (TO-226AA) Formed Leads package for Through Hole mounting. Pin assignments and physical dimensions are identical, enabling direct PCB compatibility.

Q: What is the significance of the 2N7000-AP being classified as Obsolete?

A: Obsolete status indicates the 2N7000-AP is no longer manufactured by Micro Commercial Co. The 2N7000-D74Z, manufactured by onsemi with Active product status, ensures continued availability for new designs and production support.

Q: Do both parts meet the same regulatory requirements?

A: Yes. Both the 2N7000-AP and 2N7000-D74Z are ROHS3 compliant with identical ECCN (EAR99) and HTSUS (8541.21.0095) classifications. No regulatory substitution barriers exist.

Q: How does the power dissipation difference affect circuit design?

A: The 2N7000-D74Z is rated for 400mW maximum power dissipation versus 625mW for the 2N7000-AP. Applications dissipating less than 400mW are unaffected. For higher dissipation applications, calculate actual power dissipation (P = Id² × Rds On + Vgs × Igs) to confirm operation within the substitute's limits. Thermal management may require review.

Q: Is the lower input capacitance of the 2N7000-D74Z advantageous?

A: The 2N7000-D74Z input capacitance (Ciss) is 50pF versus 60pF for the 2N7000-AP. Lower capacitance reduces gate charge requirements and may improve switching speed in high-frequency applications. This represents a beneficial characteristic for most switching applications.

Q: What packaging options are available for the 2N7000-D74Z?

A: The 2N7000-D74Z is supplied in Cut Tape (CT) packaging for automated assembly. The 2N7000-AP was supplied in unspecified packaging. Both use identical TO-92-3 component packages suitable for Through Hole PCB assembly.

Q: Can I use the 2N7000-D74Z in applications originally designed for the 2N7000-AP?

A: Yes, provided your application's operating specifications fall within the 2N7000-D74Z's ratings: continuous drain current ≤200mA, power dissipation ≤400mW, and operating temperature −55°C to 150°C. Verify these conditions before implementation.

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