2N7000 N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The 2N7000 is an N-Channel MOSFET manufactured by STMicroelectronics, rated for 60V drain-to-source voltage with 350mA continuous drain current in a TO-92-3 through-hole package. This device is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement.

The 2N7000 operates across a temperature range of -55°C to 150°C and dissipates up to 1W at the case temperature. It is RoHS3 compliant and REACH unaffected, with an MSL rating of 1 (unlimited moisture sensitivity).

Substitute parts are required when the original 2N7000 becomes unavailable or when design flexibility permits selection from active product lines offering equivalent electrical performance within specified parameter tolerances.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—
Drain to Source Voltage (Vdss)	60	V
Continuous Drain Current (Id) @ 25°C	350	mA
Rds On (Max) @ 500mA, 10V	5	Ω
Gate Threshold Voltage (Vgs(th)) @ 250µA	3	V
Gate Charge (Qg) @ 5V	2	nC
Maximum Gate Voltage (Vgs)	±18	V
Input Capacitance (Ciss) @ 25V	43	pF
Power Dissipation (Max)	1	W
Operating Temperature Range	-55 to 150	°C
Mounting Type	Through Hole	—
Package	TO-92-3 (TO-226AA)	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the 2N7000 is determined by strict equivalence across the following critical parameters:

Mandatory Equivalence Criteria:

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V minimum
Mounting Type: Through Hole
Package Family: TO-92-3 or compatible TO-226-3 footprint

Performance Tolerance Parameters:

Continuous Drain Current (Id): Substitute must meet or exceed 350mA at 25°C
Rds On (Max): Substitute must not exceed 5Ω @ 500mA, 10V
Gate Threshold Voltage (Vgs(th)): Substitute must fall within 2.4V to 3V @ 1mA to 250µA
Maximum Gate Voltage (Vgs): Substitute must support ±18V minimum
Operating Temperature Range: Substitute must cover -55°C to 150°C
Power Dissipation: Substitute must support minimum 1W at case temperature or equivalent ambient rating

Compliance Requirements:

RoHS3 Compliant
REACH Unaffected
MSL rating of 1 (Unlimited) preferred

Substitute parts meeting these criteria are electrically and mechanically interchangeable with the 2N7000 in standard applications. Variations in secondary parameters such as input capacitance, gate charge, or specific Rds On measurement conditions do not preclude substitution when primary criteria are satisfied.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (mA)	Rds On Max @ 500mA, 10V (Ω)	Vgs(th) (V)	Vgs Max (±V)	Ciss @ 25V (pF)	Power Diss (W/mW)	Temp Range (°C)	Package	Status
2N7000	STMicroelectronics	60	350	5	3 @ 250µA	±18	43	1W	-55 to 150	TO-92-3	Obsolete
2N7000	Diotec Semiconductor	60	200	5	3 @ 1mA	±20	60	350mW	-55 to 150	TO-92-3	Active
2N7000-G	Microchip Technology	60	200	5	3 @ 1mA	±30	60	1W	-55 to 150	TO-92-3	Active
2N7000BU	onsemi	60	200	5	3 @ 1mA	±20	50	400mW	-55 to 150	TO-92-3	Active
BS170	onsemi	60	500	5	3 @ 1mA	±20	40	830mW	-55 to 150	TO-92-3	Active
BS270	onsemi	60	400	2	2.5 @ 250µA	±20	50	625mW	-55 to 150	TO-92-3	Active
VN10KN3-G	Microchip Technology	60	310	5	2.5 @ 1mA	±30	60	1W	-55 to 150	TO-92-3	Active
VN10LP	Diodes Incorporated	60	270	5	2.5 @ 1mA	±20	60	625mW	-55 to 150	TO-92-3	Active
ZVN3306A	Diodes Incorporated	60	270	5	2.4 @ 1mA	±20	35	625mW	-55 to 150	TO-92-3	Active
ZVN3306ASTZ	Diodes Incorporated	60	270	5	2.4 @ 1mA	±20	35	625mW	-55 to 150	E-Line (TO-92 compatible)	Active

Engineering Selection Recommendations

Primary Substitutes (Highest Compatibility):

The 2N7000-G (Microchip Technology) and 2N7000BU (onsemi) are direct substitutes. Both maintain the 60V Vdss rating, TO-92-3 package, and -55°C to 150°C operating range. The 2N7000-G offers 1W power dissipation matching the original specification, while the 2N7000BU provides 400mW. Both are RoHS3 compliant and REACH unaffected. The 2N7000-G supports ±30V gate voltage, exceeding the original ±18V specification.

Secondary Substitutes (Performance-Equivalent):

The BS270 (onsemi) provides superior performance with 400mA continuous drain current and improved Rds On of 2Ω @ 500mA, 10V. It maintains 60V Vdss, TO-92-3 package, and full temperature range compliance. RoHS3 compliance and REACH unaffected status are confirmed. The BS270 is suitable for applications requiring lower on-resistance.

The VN10KN3-G (Microchip Technology) delivers 310mA continuous drain current with 1W power dissipation and ±30V gate voltage support. It meets all mandatory equivalence criteria and is RoHS3 compliant with REACH unaffected status.

Alternative Substitutes (Functional Equivalence):

The VN10LP (Diodes Incorporated) and ZVN3306A (Diodes Incorporated) both provide 270mA continuous drain current, 60V Vdss, and TO-92-3 package compatibility. Both support -55°C to 150°C operation and are RoHS3 compliant. The ZVN3306ASTZ variant offers identical electrical specifications in E-Line (TO-92 compatible) packaging with tape and reel delivery.

The BS170 (onsemi) exceeds the original 350mA specification with 500mA continuous drain current, making it suitable for applications requiring higher current capacity while maintaining 60V Vdss and TO-92-3 package compatibility.

Compliance Status:

All recommended substitutes are RoHS3 compliant and REACH unaffected. MSL ratings of 1 (Unlimited) are available from Microchip Technology and Diodes Incorporated variants. onsemi parts do not specify MSL ratings but are suitable for standard through-hole assembly processes.

Frequently Asked Questions (FAQ)

Q: Can the 2N7000 be replaced with the 2N7000-G or 2N7000BU without circuit modification?

A: Yes. Both parts maintain 60V Vdss, TO-92-3 package, and -55°C to 150°C operating range. Pin configuration is identical. The 2N7000-G provides 1W power dissipation matching the original specification. The 2N7000BU provides 400mW, suitable for applications with lower power requirements. No circuit modification is required.

Q: What is the difference between the 2N7000 and BS270?

A: The BS270 provides superior performance with 400mA continuous drain current (versus 350mA) and improved Rds On of 2Ω @ 500mA, 10V (versus 5Ω). Both maintain 60V Vdss and TO-92-3 package compatibility. The BS270 is suitable for applications requiring lower on-resistance and higher current capacity.

Q: Are all substitute parts available in the same TO-92-3 package?

A: All recommended substitutes are available in TO-92-3 package except ZVN3306ASTZ, which uses E-Line (TO-92 compatible) packaging. E-Line is mechanically and electrically compatible with TO-92-3 footprints in standard through-hole applications.

Q: Which substitute offers the best power dissipation rating?

A: The 2N7000-G and VN10KN3-G both provide 1W power dissipation, matching the original 2N7000 specification. The BS170 provides 830mW. Other substitutes provide 400mW to 625mW ratings.

Q: Do all substitutes support the same gate voltage range as the original 2N7000?

A: The original 2N7000 supports ±18V maximum gate voltage. The 2N7000-G and VN10KN3-G support ±30V, exceeding the original specification. All other substitutes support ±20V, which exceeds the original ±18V requirement.

Q: What is the continuous drain current rating of each substitute?

A: The 2N7000 (STMicroelectronics) is rated for 350mA. The BS170 provides 500mA. The BS270 provides 400mA. The 2N7000-G, 2N7000BU, and 2N7000 (Diotec) provide 200mA. The VN10KN3-G provides 310mA. The VN10LP and ZVN3306A/ZVN3306ASTZ provide 270mA.

Q: Are all substitutes RoHS3 compliant?

A: Yes. All recommended substitutes are RoHS3 compliant. REACH unaffected status is confirmed for all parts.

Q: Which substitute has the lowest on-resistance?

A: The BS270 provides the lowest on-resistance at 2Ω @ 500mA, 10V. All other substitutes maintain 5Ω @ 500mA, 10V, matching the original 2N7000 specification.

Q: Can the 2N7000 be used in applications requiring higher current than 350mA?

A: No. The 2N7000 is rated for 350mA continuous drain current. For applications requiring higher current, the BS170 (500mA) or BS270 (400mA) are suitable alternatives.

Q: What is the gate threshold voltage range across all substitutes?

A: Gate threshold voltages range from 2.4V to 3V across all substitutes. The original 2N7000 specifies 3V @ 250µA. Most substitutes specify 2.4V to 3V @ 1mA, which is within acceptable tolerance for standard switching applications.

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