2N6661 N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The 2N6661 is an N-Channel MOSFET manufactured by Vishay Siliconix, rated for 90V drain-to-source voltage with 860mA continuous drain current in a Through Hole TO-39 package. This device is classified as Obsolete, making identification of equivalent and substitute parts necessary for ongoing design support and component procurement. The part operates across a temperature range of -55°C to 150°C and dissipates up to 725mW at ambient temperature or 6.25W at case temperature.

Substiute Parts

2N6661

Vishay SiliconixIn Stock: 41182N6661 Datasheet

Current PartRFQ

2N6661

Solid State Inc.In Stock: 41002N6661 Datasheet

MFR RecommendedRFQ

VN2210N2

Microchip TechnologyIn Stock: 1400VN2210N2 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the 2N6661 is determined by electrical and mechanical compatibility across the following critical parameters:

Electrical Compatibility Criteria:

• FET Type: N-Channel topology must be maintained
• Drain-to-Source Voltage (Vdss): Substitute must equal or exceed 90V
• Continuous Drain Current (Id): Substitute must support the application's current requirements
• Gate Threshold Voltage (Vgs(th)): Must be compatible with drive circuitry
• On-State Resistance (Rds On): Lower values indicate improved performance; higher values require thermal evaluation
• Operating Temperature Range: Must encompass -55°C to 150°C

Mechanical Compatibility Criteria:

• Mounting Type: Through Hole required
• Package: TO-39-3 Metal Can (TO-205AD) required for pin compatibility

The substitute parts listed below satisfy these criteria within the allowed parameter ranges specified in the input data.

Parameter Comparison

Engineering Selection Recommendations

2N6661 (Solid State Inc.) is the primary substitute for the Vishay Siliconix 2N6661. This part maintains identical electrical specifications (90V Vdss, 900mA Id) and mechanical compatibility (TO-39 Through Hole package). The Solid State Inc. variant is classified as Active product status, ensuring ongoing availability. This part achieves ROHS3 compliance, providing regulatory advantage over the original Obsolete part. The marginally higher drain current (900mA versus 860mA) and improved on-state resistance (4mOhm versus 4Ohm) represent performance enhancements suitable for direct substitution in existing designs.

VN2210N2 (Microchip Technology) serves as an alternative substitute where higher voltage rating and current capacity are acceptable. This part provides 100V Vdss (exceeding the 90V requirement) and 1.7A continuous drain current, offering design margin for applications requiring higher performance. The VN2210N2 maintains Through Hole TO-39 package compatibility and operates across the same temperature range. However, the significantly higher input capacitance (500pF versus 50pF) and lower power dissipation rating (360mW Tc versus 6.25W Tc) indicate different thermal and switching characteristics that require circuit evaluation. This part is classified as Active product status.

Selection between these substitutes depends on application-specific requirements for voltage margin, current capacity, thermal dissipation, and regulatory compliance.

Frequently Asked Questions (FAQ)

Q: Can the 2N6661 (Solid State Inc.) directly replace the 2N6661 (Vishay Siliconix) in existing designs?

A: Yes. Both parts share identical electrical ratings (90V Vdss, 860mA/900mA Id), gate threshold voltage (2V @ 1mA), and TO-39 Through Hole package configuration. Pin-for-pin compatibility is maintained. The Solid State Inc. variant offers improved on-state resistance and ROHS3 compliance.

Q: What are the key differences between the 2N6661 (Solid State Inc.) and VN2210N2 (Microchip Technology)?

A: The primary differences are: (1) Vdss rating: 90V versus 100V; (2) Continuous drain current: 900mA versus 1.7A; (3) Input capacitance: 50pF versus 500pF; (4) Power dissipation: 6.25W (Tc) versus 360mW (Tc). The VN2210N2 provides higher voltage and current ratings but exhibits different capacitive and thermal characteristics.

Q: Are all substitute parts available in the same TO-39 package?

A: Yes. All listed substitute parts are packaged in TO-39-3 Metal Can (TO-205AD), ensuring mechanical and pin compatibility with the original 2N6661.

Q: Does the higher input capacitance of the VN2210N2 affect circuit performance?

A: Input capacitance (Ciss) affects gate charge and switching speed. The VN2210N2 exhibits 500pF Ciss compared to 50pF for the 2N6661 variants. This tenfold increase may impact switching frequency and gate drive requirements in high-speed applications. Circuit evaluation is necessary to determine suitability.

Q: What is the significance of RoHS compliance status?

A: The 2N6661 (Solid State Inc.) achieves ROHS3 compliance, meeting environmental and regulatory requirements for new designs and procurement in regulated markets. The original Vishay Siliconix part and VN2210N2 are RoHS non-compliant, which may restrict use in certain applications or regions.

Q: Can the VN2210N2 be used in applications designed for 90V operation?

A: Yes. The VN2210N2 is rated for 100V Vdss, which exceeds the 90V requirement. This provides additional voltage margin. However, the significantly different on-state resistance (350mOhm @ 4A, 10V versus 4Ohm @ 1A, 10V) and power dissipation characteristics require thermal and electrical analysis to confirm suitability for the specific application.

Q: What is the operating temperature compatibility across all substitute parts?

A: All substitute parts operate across -55°C to 150°C (TJ), matching the original 2N6661 specification. Temperature range compatibility is maintained across all options.