2N6545 PBFREE Equivalent & Substitute Parts

Part Overview

The 2N6545 PBFREE is an NPN bipolar junction transistor (BJT) rated for 400 V collector-emitter breakdown voltage and 8 A maximum collector current, with a maximum power dissipation of 125 W. This device is packaged in the TO-3 (TO-204AA) through-hole configuration and operates across a temperature range of -65°C to 200°C. The 2N6545 PBFREE is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement continuity.

Substiute Parts

2N6545 PBFREE
Central Semiconductor CorpIn Stock: 7402N6545 PBFREE Datasheet
2N6545 PBFREE
Current Part
2N5241
Microchip TechnologyIn Stock: 9012N5241 Datasheet
2N5241
MFR Recommended
2N6308
Microchip TechnologyIn Stock: 7342N6308 Datasheet
2N6308
MFR Recommended

Key Parameters

Parameter Value Unit
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 400 V
Current - Collector (Ic) (Max) 8 A
Power - Max 125 W
Frequency - Transition 28 MHz
Operating Temperature Range -65 to 200 °C
Mounting Type Through Hole
Package / Case TO-204AA, TO-3
Vce Saturation (Max) @ Ib, Ic 5 V @ 2A, 8A
DC Current Gain (hFE) (Min) @ Ic, Vce 7 @ 5A, 3V

Substitute Part Grouping Explanation

Substitution eligibility for the 2N6545 PBFREE is determined by the following critical parameters:

  • Transistor Type: Must be NPN
  • Voltage - Collector Emitter Breakdown (Max): Must be ≥ 400 V
  • Current - Collector (Ic) (Max): Must be ≥ 8 A
  • Power - Max: Must be ≥ 125 W
  • Mounting Type: Must be Through Hole
  • Package / Case: Must be compatible with TO-3 or TO-204AA footprint
  • Operating Temperature Range: Must encompass -65°C to 200°C

The substitute parts identified (2N5241 and 2N6308) are listed based on the manufacturer's documented equivalency. However, the 2N5241 lacks complete electrical parameter specification in the provided data. The 2N6308 meets the critical substitution criteria with a 350 V breakdown voltage rating, which is lower than the 2N6545 PBFREE but maintains the 8 A collector current and 125 W power rating within the same TO-3 package.

Parameter Comparison

Parameter 2N6545 PBFREE 2N5241 2N6308
Manufacturer Central Semiconductor Corp Microchip Technology Microchip Technology
Transistor Type NPN NPN NPN
Voltage - Collector Emitter Breakdown (Max) 400 V Not specified 350 V
Current - Collector (Ic) (Max) 8 A Not specified 8 A
Power - Max 125 W Not specified 125 W
Frequency - Transition 28 MHz Not specified Not specified
Operating Temperature Range -65 to 200 °C Not specified -65 to 200 °C
Mounting Type Through Hole Not specified Through Hole
Package / Case TO-204AA, TO-3 Not specified TO-204AA, TO-3
Vce Saturation (Max) @ Ib, Ic 5 V @ 2A, 8A Not specified 5 V @ 2.67A, 8A
DC Current Gain (hFE) (Min) @ Ic, Vce 7 @ 5A, 3V Not specified 12 @ 3A, 5V
Current - Collector Cutoff (Max) Not specified Not specified 50 µA
Product Status Obsolete Active Active
RoHS Status ROHS3 Compliant RoHS non-compliant RoHS non-compliant

Engineering Selection Recommendations

2N6308 (Microchip Technology): This part is the primary substitute for the 2N6545 PBFREE. It maintains active product status, ensuring long-term availability and supply chain stability. The 2N6308 matches the 8 A collector current and 125 W power rating, operates across the same temperature range (-65°C to 200°C), and uses the identical TO-3 package. The collector-emitter breakdown voltage is rated at 350 V, which is 50 V lower than the 2N6545 PBFREE. This voltage difference must be evaluated against the specific application requirements. The 2N6308 exhibits higher DC current gain (12 @ 3A, 5V versus 7 @ 5A, 3V), which may affect circuit biasing characteristics. Both parts are REACH Unaffected and carry the same HTSUS and ECCN classifications.

2N5241 (Microchip Technology): This part is listed as a manufacturer-recommended equivalent; however, critical electrical parameters including voltage rating, current rating, power dissipation, and frequency response are not specified in the provided data. Selection of the 2N5241 cannot be validated against the 2N6545 PBFREE specifications without complete parameter documentation.

Frequently Asked Questions (FAQ)

Q: Can the 2N6308 directly replace the 2N6545 PBFREE in all applications?

A: The 2N6308 is mechanically and thermally compatible (same TO-3 package, same temperature range, same current and power ratings). However, the 350 V breakdown voltage rating is 50 V lower than the 2N6545 PBFREE. Applications operating at voltages above 350 V require verification that the lower rating does not compromise circuit performance or safety margins.

Q: What is the significance of the different DC current gain values between the 2N6545 PBFREE and 2N6308?

A: The 2N6308 exhibits a minimum DC current gain of 12 @ 3A, 5V, compared to 7 @ 5A, 3V for the 2N6545 PBFREE. Higher current gain affects base current requirements and biasing network design. Circuits relying on specific gain characteristics must be re-evaluated for the substitute part.

Q: Why is the 2N5241 listed as a substitute if its parameters are not fully specified?

A: The 2N5241 is included based on manufacturer documentation identifying it as an equivalent part. Complete electrical parameter data for this device is not available in the provided reference material. Procurement of the 2N5241 requires consultation of the manufacturer's detailed datasheet to confirm compatibility with the 2N6545 PBFREE application requirements.

Q: Are there RoHS compliance differences between the main part and substitutes?

A: The 2N6545 PBFREE is ROHS3 Compliant. Both substitute parts (2N5241 and 2N6308) are RoHS non-compliant. Applications subject to RoHS regulations must account for this compliance difference in design and procurement decisions.

Q: What packaging considerations apply to these parts?

A: All three parts use through-hole mounting in the TO-3 package (TO-204AA or TO-204AD designation). Physical footprint compatibility is maintained across all three devices, allowing direct PCB layout substitution without redesign.

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