2N6520TA Equivalent & Substitute Parts

Part Overview

The 2N6520TA is an active PNP bipolar junction transistor manufactured by onsemi, designed for general-purpose switching and amplification applications. This through-hole component operates at collector-emitter breakdown voltages up to 350 V with a maximum collector current of 500 mA and power dissipation of 625 mW. The device is packaged in TO-92-3 configuration with formed leads, suitable for through-hole PCB assembly. Finding equivalent and substitute parts is necessary to address component availability, supply chain continuity, and design flexibility across manufacturing batches and procurement cycles.

Substiute Parts

2N6520TA

onsemiIn Stock: 46092N6520TA Datasheet

Current PartRFQ

MPSA92 PBFREE

Central Semiconductor CorpIn Stock: 8586MPSA92 PBFREE Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the 2N6520TA is determined by strict equivalence across the following critical parameters:

Mandatory Matching Criteria:

• Transistor polarity: PNP configuration
• Collector current rating: 500 mA maximum
• Power dissipation: 625 mW maximum
• Mounting technology: Through-hole assembly
• Package type: TO-92-3 form factor
• Compliance certifications: ROHS3 Compliant, REACH Unaffected

Allowable Parameter Variations:

• Collector-emitter breakdown voltage: Substitute must equal or exceed 350 V
• Transition frequency: Substitute may operate at lower frequency if application does not require 200 MHz performance
• DC current gain (hFE): Substitute values must support circuit biasing requirements
• Saturation voltage: Substitute values must be compatible with circuit design margins
• Collector cutoff current (ICBO): Substitute values must not exceed circuit leakage specifications

The MPSA92 PBFREE meets the mandatory criteria with the exception of collector-emitter breakdown voltage, which is rated at 300 V. This represents a 50 V reduction from the 2N6520TA specification and must be evaluated against circuit operating conditions.

Parameter Comparison

Engineering Selection Recommendations

2N6520TA (Primary Component)

The 2N6520TA is the specified component for applications requiring 350 V collector-emitter breakdown voltage with 200 MHz transition frequency capability. This device maintains active product status with 4,580 units in current inventory. Full ROHS3 compliance and REACH unaffected status confirm regulatory alignment for industrial and commercial applications.

MPSA92 PBFREE (Substitute Component)

The MPSA92 PBFREE is a qualified substitute for applications where the 350 V breakdown voltage specification is not a circuit requirement. This device operates at 300 V maximum breakdown voltage and 50 MHz transition frequency, representing reduced performance in these parameters. The MPSA92 PBFREE maintains identical collector current (500 mA) and power dissipation (625 mW) ratings, matching mechanical and thermal characteristics. ROHS3 compliance and REACH unaffected status are confirmed. Inventory availability is 8,547 units. The lower transition frequency and reduced breakdown voltage require circuit-level validation before substitution.

Both components are active products with confirmed regulatory compliance suitable for direct component selection based on circuit voltage and frequency requirements.

Frequently Asked Questions (FAQ)

Q: Can the MPSA92 PBFREE directly replace the 2N6520TA in all applications?

A: No. The MPSA92 PBFREE operates at 300 V maximum collector-emitter breakdown voltage compared to the 2N6520TA specification of 350 V. Applications operating at voltages exceeding 300 V require the 2N6520TA. Additionally, the MPSA92 PBFREE transition frequency is 50 MHz versus 200 MHz for the 2N6520TA. High-frequency switching applications may require the 2N6520TA.

Q: Are the TO-92-3 packages physically identical between these devices?

A: Yes. Both the 2N6520TA and MPSA92 PBFREE use TO-92-3 (TO-226AA) package configuration with formed leads. Physical dimensions and PCB footprints are identical, permitting direct mechanical substitution without layout modification.

Q: What is the significance of the collector cutoff current difference?

A: The 2N6520TA specifies 50 nA maximum ICBO while the MPSA92 PBFREE specifies 250 nA maximum. This five-fold difference affects leakage current in the transistor's off-state. Applications with stringent leakage specifications or high-impedance biasing networks may require the lower leakage of the 2N6520TA.

Q: Do both devices meet the same compliance standards?

A: Yes. Both the 2N6520TA and MPSA92 PBFREE are ROHS3 compliant and REACH unaffected. Both carry EAR99 ECCN classification. Regulatory compliance is equivalent between the two devices.

Q: What is the practical difference in saturation voltage between these transistors?

A: The 2N6520TA saturates at 1.0 V maximum (5 mA base, 50 mA collector) while the MPSA92 PBFREE saturates at 0.5 V maximum (2 mA base, 20 mA collector). The MPSA92 PBFREE exhibits lower saturation voltage under its specified test conditions, which may improve switching efficiency in low-voltage applications.

Q: Can I use the MPSA92 PBFREE in a 350 V circuit?

A: No. The MPSA92 PBFREE maximum collector-emitter breakdown voltage is 300 V. Operating this device at 350 V exceeds its rated specification and risks device failure. The 2N6520TA must be used for 350 V applications.

Q: Which device should I select for new designs?

A: Selection depends on circuit requirements. For applications requiring 350 V breakdown voltage or 200 MHz transition frequency, specify the 2N6520TA. For applications operating below 300 V with switching frequencies below 50 MHz, either device is suitable. Verify specific circuit voltage and frequency requirements before final component selection.