2N6517BU Equivalent & Substitute Parts

Part Overview

The 2N6517BU is an NPN bipolar junction transistor manufactured by onsemi, designed for through-hole applications in the TO-92-3 package. This device operates at a maximum collector-emitter voltage of 350 V with a collector current rating of 500 mA and a maximum power dissipation of 625 mW. The 2N6517BU is classified as Last Time Buy, indicating that the original manufacturer has discontinued production. Identifying equivalent and substitute parts is necessary to maintain design continuity and ensure component availability for ongoing production and repair applications.

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN	—
Collector Current (Max)	500	mA
Collector-Emitter Breakdown Voltage (Max)	350	V
Power Dissipation (Max)	625	mW
Transition Frequency	200	MHz
Operating Temperature (Max)	150	°C
Mounting Type	Through Hole	—
Package	TO-92-3	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the 2N6517BU is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Transistor type must be NPN
Collector current rating must be equal to or greater than 500 mA
Collector-emitter breakdown voltage must be equal to or greater than 350 V
Power dissipation must support the application requirements
Through-hole mounting configuration must be maintained
Package must be physically compatible with TO-92-3 footprint

Secondary Considerations:

Transition frequency and DC current gain characteristics
Operating temperature range
RoHS and REACH compliance status

The substitute parts listed below meet the primary electrical requirements while maintaining through-hole mounting compatibility. Variations in transition frequency, saturation voltage, and maximum operating temperature reflect design differences between manufacturers but do not preclude functional substitution in applications where the 2N6517BU was originally specified.

Parameter Comparison

Parameter	2N6517BU	ZTX457	ZTX657	ZTX657STZ	ZTX658STZ
Manufacturer	onsemi	Diodes Incorporated	Diodes Incorporated	Diodes Incorporated	Diodes Incorporated
Transistor Type	NPN	NPN	NPN	NPN	NPN
Ic (Max)	500 mA	500 mA	500 mA	500 mA	500 mA
Vce Breakdown (Max)	350 V	300 V	300 V	300 V	400 V
Power (Max)	625 mW	1 W	1 W	1 W	1 W
Frequency - Transition	200 MHz	75 MHz	30 MHz	30 MHz	50 MHz
Operating Temperature (Max)	150°C	200°C	200°C	200°C	200°C
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-92-3	E-Line-3 (TO-92 compatible)	E-Line-3 (TO-92 compatible)	E-Line-3 (TO-92 compatible)	E-Line-3 (TO-92 compatible)
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Product Status	Last Time Buy	Active	Active	Active	Active

Engineering Selection Recommendations

ZTX457 (Diodes Incorporated) The ZTX457 is suitable for applications where the 2N6517BU collector-emitter voltage requirement can be reduced to 300 V. This device offers higher power dissipation (1 W versus 625 mW) and extended operating temperature range (-55°C to 200°C). The transition frequency of 75 MHz is lower than the 2N6517BU but remains adequate for most low-frequency switching applications. All regulatory compliance requirements (ROHS3, REACH Unaffected, EAR99) are met. Product status is Active, ensuring long-term availability.

ZTX657 (Diodes Incorporated) The ZTX657 operates at 300 V maximum collector-emitter voltage and is intended for applications with lower frequency requirements (30 MHz transition frequency). Power dissipation is rated at 1 W. This device is available in Bulk packaging and maintains full regulatory compliance. Product status is Active with 9300 units in stock, providing supply security.

ZTX657STZ (Diodes Incorporated) The ZTX657STZ is electrically identical to the ZTX657 but is supplied in Tape & Box (TB) packaging with formed leads. This variant is suitable for automated assembly processes. Electrical specifications, compliance status, and product availability match the ZTX657 Bulk variant.

ZTX658STZ (Diodes Incorporated) The ZTX658STZ provides the highest collector-emitter breakdown voltage among the substitutes at 400 V, exceeding the 2N6517BU requirement of 350 V. This device operates at 50 MHz transition frequency and is supplied in Tape & Box packaging with formed leads. Power dissipation is 1 W. All regulatory requirements are satisfied. Product status is Active with 4300 units in stock.

All substitute parts are manufactured by Diodes Incorporated, maintain ROHS3 compliance, and are classified as Active products, ensuring continued availability and support.

Frequently Asked Questions (FAQ)

Q: Can the ZTX457, ZTX657, or ZTX657STZ be used as direct replacements for the 2N6517BU in all applications?

A: These substitutes are suitable only for applications where the collector-emitter voltage requirement does not exceed 300 V. The 2N6517BU is rated for 350 V maximum. If the circuit operates at voltages between 300 V and 350 V, the ZTX658STZ (400 V rating) is the appropriate substitute. Transition frequency differences must also be evaluated against circuit timing requirements.

Q: What is the difference between ZTX657 and ZTX657STZ?

A: Both devices are electrically identical with the same electrical specifications. The primary difference is packaging: ZTX657 is supplied in Bulk packaging, while ZTX657STZ is supplied in Tape & Box (TB) format with formed leads. The TB variant is optimized for automated pick-and-place assembly processes.

Q: Are all substitute parts RoHS compliant?

A: Yes. All substitute parts listed (ZTX457, ZTX657, ZTX657STZ, and ZTX658STZ) are ROHS3 compliant and REACH unaffected, matching the compliance status of the 2N6517BU.

Q: Why does the 2N6517BU have a lower maximum operating temperature (150°C) compared to the substitutes (200°C)?

A: Operating temperature limits are determined by device design and manufacturing specifications. The substitute devices from Diodes Incorporated are rated for higher junction temperatures. This difference does not prevent substitution; it indicates that the substitutes can operate reliably in higher-temperature environments.

Q: Which substitute part should be selected if the application requires the highest voltage rating?

A: The ZTX658STZ provides the highest collector-emitter breakdown voltage at 400 V, exceeding both the 2N6517BU (350 V) and other substitutes (300 V). This device is suitable for high-voltage applications and is available in Tape & Box packaging.

Q: Can the 2N6517BU be substituted in high-frequency circuits?

A: The 2N6517BU operates at 200 MHz transition frequency. The ZTX457 (75 MHz) and ZTX657/ZTX657STZ (30 MHz) have lower transition frequencies and are not suitable for applications requiring the full 200 MHz bandwidth. The ZTX658STZ (50 MHz) provides intermediate frequency performance but remains below the original specification.

Q: Are the substitute parts available in the same TO-92-3 package?

A: The substitute parts are supplied in E-Line-3 packages, which are physically compatible with TO-92-3 footprints. Both package styles are through-hole configurations with three leads and maintain the same pin spacing and mounting characteristics.

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