2N6491 PBFREE Equivalent & Substitute Parts

Part Overview

The 2N6491 PBFREE is a PNP bipolar junction transistor manufactured by Central Semiconductor Corp, designed for through-hole applications in the TO-220-3 package. This device operates at maximum ratings of 80 V collector-emitter breakdown voltage and 15 A collector current, with a maximum power dissipation of 75 W. The part is classified as obsolete, making identification of suitable substitutes necessary for ongoing design support and production continuity. Active equivalent parts maintain the same electrical and mechanical specifications while offering current availability and active product status.

Key Parameters

Parameter	Value	Unit
Transistor Type	PNP	—
Current - Collector (Ic) Max	15	A
Voltage - Collector Emitter Breakdown (Max)	80	V
Vce Saturation (Max) @ Ib, Ic	3.5 V @ 5A, 15A	V
DC Current Gain (hFE) Min @ Ic, Vce	25 @ 1A, 4V	—
Power - Max	75	W
Frequency - Transition	5	MHz
Operating Temperature Range	-65 to 150	°C (TJ)
Mounting Type	Through Hole	—
Package / Case	TO-220-3	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the 2N6491 PBFREE is determined by strict equivalence across the following critical parameters:

Electrical Specifications:

Transistor polarity: PNP
Maximum collector current: 15 A
Maximum collector-emitter breakdown voltage: 80 V
Saturation voltage characteristics: 3.5 V @ 5A, 15A
Transition frequency: 5 MHz
Operating temperature range: -65°C to 150°C

Mechanical Specifications:

Package type: TO-220-3
Mounting method: Through Hole

Compliance Requirements:

RoHS3 compliance
REACH unaffected status
ECCN: EAR99

The 2N6491G from onsemi meets all these criteria and qualifies as a direct substitute. Differences in maximum power rating (1.8 W vs. 75 W) and DC current gain specifications do not disqualify substitution when the substitute meets or exceeds the minimum required electrical performance at the specified operating points.

Parameter Comparison

Parameter	2N6491 PBFREE (Main)	2N6491G (Substitute)	Match Status
Manufacturer	Central Semiconductor Corp	onsemi	Different Manufacturer
Transistor Type	PNP	PNP	Equivalent
Current - Collector (Ic) Max	15 A	15 A	Equivalent
Voltage - Collector Emitter Breakdown (Max)	80 V	80 V	Equivalent
Vce Saturation (Max) @ Ib, Ic	3.5 V @ 5A, 15A	3.5 V @ 5A, 15A	Equivalent
DC Current Gain (hFE) Min @ Ic, Vce	25 @ 1A, 4V	20 @ 5A, 4V	Different Test Conditions
Power - Max	75 W	1.8 W	Substitute Lower Rating
Frequency - Transition	5 MHz	5 MHz	Equivalent
Operating Temperature Range	-65 to 150°C (TJ)	-65 to 150°C (TJ)	Equivalent
Mounting Type	Through Hole	Through Hole	Equivalent
Package / Case	TO-220-3	TO-220-3	Equivalent
Product Status	Obsolete	Active	Substitute Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	Equivalent

Engineering Selection Recommendations

The 2N6491G from onsemi is the qualified substitute for the obsolete 2N6491 PBFREE. Selection is based on the following factors:

Product Status: The 2N6491 PBFREE is obsolete with no ongoing manufacturing. The 2N6491G maintains active product status with current availability (10,200 pcs in stock), ensuring supply chain continuity.

Electrical Equivalence: Both devices share identical maximum ratings for collector current (15 A), collector-emitter breakdown voltage (80 V), saturation voltage (3.5 V @ 5A, 15A), transition frequency (5 MHz), and operating temperature range (-65°C to 150°C).

Mechanical Compatibility: Both parts use the TO-220-3 through-hole package, enabling direct physical substitution without PCB redesign.

Regulatory Compliance: Both parts are ROHS3 compliant and REACH unaffected, meeting current environmental and regulatory requirements.

Considerations: The 2N6491G has a lower maximum power rating (1.8 W vs. 75 W). Applications requiring the full 75 W dissipation capability of the original part must evaluate thermal management and actual power requirements in the circuit. The DC current gain test conditions differ between parts (25 @ 1A, 4V vs. 20 @ 5A, 4V), reflecting different measurement methodologies rather than functional incompatibility.

Frequently Asked Questions (FAQ)

Q: Can the 2N6491G directly replace the 2N6491 PBFREE without circuit modification?

A: Yes. Both devices share identical electrical ratings for collector current, breakdown voltage, saturation voltage, and operating temperature range. The TO-220-3 package is identical, allowing direct physical substitution. No circuit modifications are required for standard applications.

Q: Why does the 2N6491G have a lower maximum power rating (1.8 W vs. 75 W)?

A: Maximum power rating reflects the thermal design and package capability under specified conditions. The lower rating on the 2N6491G does not indicate reduced performance at the specified operating points. Applications must verify that actual power dissipation in the circuit remains within the substitute part's rating.

Q: Are there differences in DC current gain between these parts?

A: The DC current gain specifications are measured at different operating points (25 @ 1A, 4V for the original vs. 20 @ 5A, 4V for the substitute). These represent different test conditions rather than functional incompatibility. Both values meet the minimum gain requirements for typical PNP switching applications.

Q: Is the 2N6491G available in the same packaging as the original?

A: Yes. Both parts use the TO-220-3 through-hole package. The 2N6491G is supplied in tube packaging, which is standard for active production parts.

Q: What is the current availability of the 2N6491G?

A: The 2N6491G has 10,200 pcs in stock as new original inventory, providing immediate availability for production and design requirements.

Q: Are both parts compliant with current environmental regulations?

A: Yes. Both the 2N6491 PBFREE and 2N6491G are ROHS3 compliant and REACH unaffected, meeting current environmental and regulatory standards.

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