2N6490 Equivalent & Substitute Parts

Part Overview

The 2N6490 is a PNP bipolar junction transistor (BJT) rated for 60 V collector-emitter breakdown voltage and 15 A maximum collector current in a Through Hole TO-220-3 package. This device is classified as obsolete, making identification of equivalent and substitute parts necessary for ongoing design support and production continuity. The 2N6490 is suitable for applications requiring moderate power dissipation (1.8 W maximum) and low-frequency switching operations up to 5 MHz transition frequency.

Substiute Parts

2N6490
onsemiIn Stock: 13072N6490 Datasheet
2N6490
Current Part
2N6490G
onsemiIn Stock: 25592N6490G Datasheet
2N6490G
Direct

Key Parameters

Parameter Value Unit
Transistor Type PNP
Current - Collector (Ic) (Max) 15 A
Voltage - Collector Emitter Breakdown (Max) 60 V
Vce Saturation (Max) @ Ib, Ic 3.5 @ 5A, 15A V
Current - Collector Cutoff (Max) 1 mA
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 5A, 4V
Power - Max 1.8 W
Frequency - Transition 5 MHz
Operating Temperature Range -65 to 150 °C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3

Substitute Part Grouping Explanation

Substitution of the 2N6490 is determined by strict equivalence across the following electrical and mechanical parameters:

Critical Matching Parameters:

  • Transistor polarity: PNP
  • Maximum collector current: 15 A
  • Maximum collector-emitter breakdown voltage: 60 V
  • Saturation voltage characteristics: 3.5 V @ 5A, 15A
  • Collector cutoff current: 1 mA maximum
  • DC current gain (hFE): minimum 20 @ 5A, 4V
  • Maximum power dissipation: 1.8 W
  • Transition frequency: 5 MHz
  • Operating temperature range: -65°C to 150°C
  • Package type: TO-220-3 Through Hole

The 2N6490G is a direct equivalent manufactured by onsemi with identical electrical specifications and the same TO-220-3 package configuration. The primary distinction is packaging format (Tube versus unspecified for the base part) and RoHS compliance status (ROHS3 Compliant for 2N6490G versus RoHS non-compliant for 2N6490).

Parameter Comparison

Parameter 2N6490 2N6490G
Manufacturer onsemi onsemi
Transistor Type PNP PNP
Current - Collector (Ic) (Max) 15 A 15 A
Voltage - Collector Emitter Breakdown (Max) 60 V 60 V
Vce Saturation (Max) @ Ib, Ic 3.5 V @ 5A, 15A 3.5 V @ 5A, 15A
Current - Collector Cutoff (Max) 1 mA 1 mA
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 5A, 4V 20 @ 5A, 4V
Power - Max 1.8 W 1.8 W
Frequency - Transition 5 MHz 5 MHz
Operating Temperature Range -65°C to 150°C (TJ) -65°C to 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-220-3 TO-220-3
Product Status Obsolete Obsolete
RoHS Status RoHS non-compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)
REACH Status REACH Unaffected REACH Unaffected

Engineering Selection Recommendations

The 2N6490G is the direct equivalent substitute for the 2N6490. Both devices are manufactured by onsemi and share identical electrical and thermal specifications across all critical parameters. The 2N6490G provides the additional advantage of ROHS3 compliance, making it suitable for applications subject to RoHS regulatory requirements. Both parts maintain MSL Level 1 (Unlimited) moisture sensitivity classification and REACH Unaffected status.

Selection between 2N6490 and 2N6490G should be based on regulatory compliance requirements for the end application. For new designs or production requiring RoHS compliance, the 2N6490G is the appropriate choice. For legacy system support where RoHS compliance is not mandated, either part is electrically and mechanically interchangeable.

Frequently Asked Questions (FAQ)

Q: Can the 2N6490G be used as a direct replacement for the 2N6490?

A: Yes. The 2N6490G is electrically and mechanically identical to the 2N6490. Both devices feature the same TO-220-3 package, identical maximum ratings (15 A collector current, 60 V breakdown voltage, 1.8 W power dissipation), and matching DC current gain specifications. The primary difference is RoHS compliance status.

Q: What is the significance of the RoHS compliance difference between 2N6490 and 2N6490G?

A: The 2N6490 is RoHS non-compliant, while the 2N6490G is ROHS3 compliant. Applications subject to RoHS regulatory requirements must use the 2N6490G. For applications without RoHS mandates, both parts are functionally equivalent.

Q: Are there any package or mounting differences between these parts?

A: Both the 2N6490 and 2N6490G use the TO-220-3 Through Hole package. The only packaging distinction noted is that the 2N6490G is supplied in Tube format. This does not affect electrical performance or mechanical compatibility in circuit applications.

Q: What are the critical electrical parameters that define substitution compatibility?

A: Substitution compatibility is determined by matching transistor polarity (PNP), maximum collector current (15 A), collector-emitter breakdown voltage (60 V), saturation voltage (3.5 V @ 5A, 15A), DC current gain (minimum 20 @ 5A, 4V), maximum power dissipation (1.8 W), and operating temperature range (-65°C to 150°C).

Q: Can the 2N6490 be used in applications requiring RoHS compliance?

A: No. The 2N6490 is RoHS non-compliant. Applications requiring RoHS compliance must use the 2N6490G, which carries ROHS3 compliance certification.

Q: What is the moisture sensitivity level for these devices?

A: Both the 2N6490 and 2N6490G are classified as MSL Level 1 (Unlimited), indicating no moisture sensitivity restrictions during storage or handling.

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