2N6341 NPN Bipolar Transistor Equivalent & Substitute Parts

Part Overview

The 2N6341 is an NPN bipolar junction transistor rated for 150 V collector-emitter breakdown voltage and 25 A maximum collector current in a TO-204 (TO-3) through-hole package. This device is designed for high-current switching and amplification applications requiring 200 W power dissipation capability.

The original onsemi 2N6341 carries an obsolete product status. Equivalent and substitute parts are available from active product lines, including RoHS-compliant variants and military-grade qualified versions. Substitution is necessary to ensure continued component availability and compliance with current manufacturing standards.

Substiute Parts

2N6341

onsemiIn Stock: 7782N6341 Datasheet

Current PartRFQ

2N6341G

onsemiIn Stock: 8622N6341G Datasheet

DirectRFQ

2N6341

Microchip TechnologyIn Stock: 10102N6341 Datasheet

DirectRFQ

JAN2N6341

Microchip TechnologyIn Stock: 934JAN2N6341 Datasheet

DirectRFQ

JANTXV2N6341

Microchip TechnologyIn Stock: 975JANTXV2N6341 Datasheet

DirectRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the 2N6341 is determined by electrical and mechanical parameter equivalence across the following critical specifications:

Electrical Parameters:

• Collector-emitter breakdown voltage: 150 V (maximum)
• Maximum collector current: 25 A
• Maximum power dissipation: 200 W
• Vce saturation: 1.8 V @ 2.5 A, 25 A
• Collector cutoff current: 50 µA (maximum)
• DC current gain (hFE): minimum 30 @ 10 A, 2 V

Mechanical Parameters:

• Package type: TO-204AA / TO-3 through-hole
• Mounting: Through-hole configuration

Substitute parts maintain these electrical and mechanical specifications within the defined tolerances. Variations in product status (active versus obsolete), RoHS compliance, military qualification, and manufacturer source do not affect functional substitutability when electrical and mechanical parameters remain equivalent.

Parameter Comparison

Engineering Selection Recommendations

For Standard Commercial Applications: The 2N6341G (onsemi) is the direct active-product equivalent of the original 2N6341. This variant maintains identical electrical specifications and TO-3 package configuration while offering ROHS3 compliance and active product status. Selection of 2N6341G eliminates obsolescence risk and satisfies RoHS requirements for new designs.

The 2N6341 from Microchip Technology provides an alternative source with active product status. This variant maintains all critical electrical parameters and through-hole TO-3 packaging. RoHS compliance status is not specified in available documentation.

For Military and Aerospace Applications: JAN2N6341 and JANTXV2N6341 (Microchip Technology) are military-qualified variants conforming to MIL-PRF-19500/509 specifications. These parts are suitable for applications requiring military-grade component qualification. Both variants maintain the 150 V / 25 A electrical ratings and TO-3 package configuration. JAN2N6341 specifies a maximum collector cutoff current of 10 µA, providing tighter leakage specifications than the standard 50 µA maximum.

Compliance Considerations: Applications subject to RoHS directives should specify 2N6341G (onsemi). Applications without RoHS requirements may select from any active variant based on availability and source preference. Military applications require JAN2N6341 or JANTXV2N6341 with appropriate procurement documentation.

Frequently Asked Questions (FAQ)

Q: Can 2N6341G be used as a direct replacement for the obsolete 2N6341?

A: Yes. The 2N6341G maintains identical electrical specifications (150 V breakdown, 25 A collector current, 200 W power rating, 1.8 V saturation voltage) and TO-3 package configuration. The primary differences are active product status and RoHS3 compliance. No circuit modifications are required.

Q: What is the difference between the onsemi 2N6341G and the Microchip 2N6341?

A: Both parts meet the core electrical specifications of 150 V / 25 A / 200 W. The onsemi 2N6341G is explicitly ROHS3 compliant, while the Microchip variant does not specify RoHS status. The onsemi variant is recommended for applications requiring documented RoHS compliance.

Q: Are military-qualified variants (JAN2N6341, JANTXV2N6341) suitable for commercial applications?

A: Yes. Military-qualified parts meet or exceed commercial specifications. JAN2N6341 and JANTXV2N6341 maintain the 150 V / 25 A electrical ratings and TO-3 package. These variants are suitable for any application requiring the 2N6341 specifications. Selection depends on procurement requirements and cost considerations.

Q: What is the significance of the collector cutoff current difference between JAN2N6341 (10 µA max) and other variants (50 µA max)?

A: The JAN2N6341 specifies a tighter maximum collector cutoff current of 10 µA compared to the 50 µA maximum of other variants. This represents a more stringent leakage specification. For applications sensitive to leakage current, JAN2N6341 provides superior performance. For standard applications, both specifications are functionally equivalent.

Q: Can these parts be used interchangeably in existing PCB designs?

A: Yes. All substitute parts use identical TO-3 through-hole package configuration with the same pin assignments and mechanical footprint. No PCB modifications are required for substitution.

Q: Which variant should be selected for new product designs?

A: For new designs without military requirements, 2N6341G (onsemi) is recommended due to active product status and explicit ROHS3 compliance. For military or aerospace applications, JAN2N6341 or JANTXV2N6341 (Microchip) should be specified with appropriate MIL-PRF-19500/509 documentation.

Q: Are there operating temperature differences between variants?

A: The original onsemi 2N6341 and 2N6341G specify -65°C to 200°C operating range. Microchip variants (2N6341, JAN2N6341, JANTXV2N6341) specify -65°C to 175°C. For applications requiring operation above 175°C, the onsemi variants provide extended temperature capability.