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2N6331 Equivalent & Substitute Parts Reference
Part Overview
The 2N6331 is a PNP bipolar junction transistor (BJT) with a collector-emitter breakdown voltage of 100 V, maximum collector current of 30 A, and maximum power dissipation of 200 W, housed in a TO-204AA (TO-3) package and intended for through-hole mounting. The part is currently active and is classified as RoHS non-compliant and REACH unaffected. Finding alternative models is necessary due to supply chain requirements, compliance issues, and ongoing inventory considerations associated with legacy designs and environmental regulations.
Substiute Parts
Key Parameters
| Parameter | 2N6331 Value |
|---|---|
| Manufacturer | Microchip Technology |
| Category | Transistors, Bipolar (BJT) |
| Transistor Type | PNP |
| Current - Collector (Ic) (Max) | 30 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 200 W |
| Mounting Type | Through Hole |
| Package / Case | TO-204AA, TO-3 |
| RoHS Status | RoHS non-compliant |
| REACH Status | REACH Unaffected |
| Product Status | Active |
Substitute Part Grouping Explanation
Substitute components are identified strictly based on matching the following key parameters:
- Transistor Type: PNP
- Maximum Collector Current (Ic): 30 A
- Maximum Collector-Emitter Breakdown Voltage: 100 V
- Maximum Power Dissipation: 200 W
- Package / Case: TO-204AA, TO-3
- Mounting Type: Through Hole
- Category: Transistors, Bipolar (BJT)
Substitute models included in this reference meet all the above parameters without deviation.
Parameter Comparison
| Parameter | 2N6331 | MJ4502G |
|---|---|---|
| Manufacturer | Microchip Technology | onsemi |
| Category | Transistors, Bipolar (BJT) | Transistors, Bipolar (BJT) |
| Transistor Type | PNP | PNP |
| Current - Collector (Ic) (Max) | 30 A | 30 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V | 100 V |
| Power - Max | 200 W | 200 W |
| Mounting Type | Through Hole | Through Hole |
| Package / Case | TO-204AA, TO-3 | TO-204AA, TO-3 |
| RoHS Status | RoHS non-compliant | ROHS3 Compliant |
| REACH Status | REACH Unaffected | REACH Unaffected |
| Product Status | Active | Active |
Engineering Selection Recommendations
When selecting an equivalent or substitute for the 2N6331, evaluate requirements for RoHS and REACH compliance. The MJ4502G provides a direct match on all key electrical and mechanical parameters and is ROHS3 compliant, in contrast to the 2N6331’s RoHS non-compliance. Both parts are currently active and have unaffected REACH status. Choose based on regulatory requirements and supply considerations.
Frequently Asked Questions (FAQ)
Q: What criteria are used to qualify a substitute for the 2N6331 BJT transistor?
A: Substitutes are qualified strictly by matching transistor type (PNP), maximum collector current (30 A), collector-emitter breakdown voltage (100 V), maximum power dissipation (200 W), package/case (TO-204AA, TO-3), mounting type (Through Hole), and category.
Q: Are there differences in environmental compliance between the 2N6331 and its substitutes?
A: Yes, the 2N6331 is RoHS non-compliant while the MJ4502G is ROHS3 compliant. Both parts are REACH unaffected.
Q: Do both the 2N6331 and MJ4502G share the same mechanical footprint?
A: Yes, both parts are supplied in the TO-204AA (TO-3) package with through-hole mounting.
Q: Is product status a factor in selecting substitutes?
A: Both the 2N6331 and MJ4502G are active, allowing either to be specified where supply and compliance criteria are satisfied.
Q: Can the MJ4502G be directly substituted for the 2N6331 based on the provided parameters?
A: Yes, based strictly on the listed parameters, the MJ4502G is an equivalent part to the 2N6331 in the specified product category.
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