2N6318 Equivalent & Substitute Parts

Part Overview

The 2N6318 is a through-hole bipolar junction transistor (BJT) manufactured by Central Semiconductor Corp, rated for 80 V collector-emitter breakdown voltage and 7 A maximum collector current. This component is classified as obsolete, making equivalent substitutes necessary for ongoing production and maintenance applications. The 2N6318 delivers 90 W maximum power dissipation with a transition frequency of 4 MHz and operates across a temperature range of -65°C to 200°C (junction temperature).

Substiute Parts

2N6318

Central Semiconductor CorpIn Stock: 10502N6318 Datasheet

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2N5427

Microchip TechnologyIn Stock: 11192N5427 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the 2N6318 is determined by strict alignment of electrical and mechanical parameters. The primary criteria for equivalency are:

Electrical Parameters:

• Voltage - Collector Emitter Breakdown: 80 V (maximum rating must match or exceed)
• Current - Collector (Ic) (Max): 7 A (must match or exceed)
• Package / Case: TO-66-2 (physical compatibility required)
• Mounting Type: Through Hole (form factor requirement)

The 2N5427 qualifies as a substitute based on matching the 80 V breakdown voltage, 7 A collector current rating, and identical through-hole TO-66 package configuration. Both components share the same mechanical footprint and electrical current/voltage envelope, enabling direct substitution in circuit applications where these parameters define the design constraints.

Parameter Comparison

Engineering Selection Recommendations

The 2N6318 is classified as obsolete, necessitating component substitution for new designs and ongoing production support. The 2N5427 manufactured by Microchip Technology is an active product with current availability, providing continuity for applications requiring 80 V / 7 A BJT performance in TO-66 through-hole packages.

Compliance Considerations:

Both the 2N6318 and 2N5427 carry REACH Unaffected status and EAR99 export classification, indicating equivalent regulatory standing. The 2N5427 is classified as RoHS non-compliant, which must be evaluated against specific application requirements and supply chain policies.

Power Dissipation Differential:

The 2N6318 specifies 90 W maximum power dissipation, while the 2N5427 is rated for 40 W. Applications requiring sustained power dissipation approaching or exceeding 40 W must verify thermal management adequacy with the substitute component. The reduced power rating does not affect substitution validity for applications operating within the 40 W envelope.

Availability:

The 2N5427 is currently in active production status with documented inventory availability, whereas the 2N6318 is obsolete. Selection of the 2N5427 ensures long-term component supply continuity.

Frequently Asked Questions (FAQ)

Q: Can the 2N5427 directly replace the 2N6318 in existing circuit designs?

A: Direct substitution is valid for applications where power dissipation remains within the 40 W maximum rating of the 2N5427. Both components share identical voltage (80 V) and current (7 A) ratings, matching mechanical footprint (TO-66), and through-hole mounting configuration. Thermal design review is required if the original design approaches or exceeds 40 W dissipation.

Q: What is the significance of the transistor type difference (NPN vs. PNP)?

A: The 2N6318 specifications provided do not explicitly state transistor polarity type. The 2N5427 is specified as PNP. Circuit polarity requirements must be verified against the original application schematic before substitution.

Q: Are there compliance or certification differences between these parts?

A: Both components share identical REACH status (REACH Unaffected) and export classification (EAR99). The 2N5427 carries RoHS non-compliant status, which may impact suitability depending on end-application regulatory requirements and customer specifications.

Q: What parameters determine whether a substitute is acceptable?

A: Substitution validity is established through matching or exceeding the following parameters: Voltage - Collector Emitter Breakdown (80 V minimum), Current - Collector maximum (7 A minimum), Package / Case (TO-66-2 required), and Mounting Type (Through Hole required). Additional parameters such as power dissipation, frequency response, and gain characteristics must be evaluated within specific application context.

Q: Is the 2N5427 suitable for high-temperature applications?

A: Operating temperature range specifications for the 2N5427 are not provided in the available data. The 2N6318 operates from -65°C to 200°C (junction temperature). Temperature range verification is required before deployment in applications requiring extended temperature operation.

Q: How does the transition frequency difference affect circuit performance?

A: The 2N6318 specifies 4 MHz transition frequency. The 2N5427 transition frequency is not specified in available documentation. Applications dependent on specific frequency response characteristics require detailed frequency response analysis of the substitute component before implementation.