2N6287 Equivalent & Substitute Parts

Part Overview

The 2N6287 is a PNP Darlington bipolar junction transistor rated for 100 V collector-emitter breakdown voltage and 20 A maximum collector current. This device is designed for chassis mount applications in the TO-3 package and is classified as obsolete by STMicroelectronics. Due to its obsolete status, equivalent substitute parts from active manufacturers are necessary to maintain design continuity and ensure long-term component availability for new production and field replacements.

Key Parameters

Parameter	Value	Unit
Transistor Type	PNP - Darlington	—
Current - Collector (Ic) (Max)	20	A
Voltage - Collector Emitter Breakdown (Max)	100	V
Vce Saturation (Max) @ Ib, Ic	3V @ 200mA, 20A	—
Current - Collector Cutoff (Max)	1	mA
DC Current Gain (hFE) (Min) @ Ic, Vce	750 @ 10A, 3V	—
Power - Max	160	W
Package / Case	TO-204AA, TO-3	—
Mounting Type	Chassis Mount	—
Operating Temperature (TJ)	200	°C

Substitute Part Grouping Explanation

Substitution of the 2N6287 is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Transistor type: PNP - Darlington configuration
Collector current rating: minimum 20 A
Collector-emitter breakdown voltage: minimum 100 V
Package compatibility: TO-3 or TO-204AA form factor
Mounting type: Through hole or chassis mount

Secondary Compatibility Factors:

Vce saturation characteristics at specified bias conditions
DC current gain (hFE) performance envelope
Power dissipation capability
Operating temperature range

The 2N6287 from Microchip Technology meets all primary substitution criteria with identical electrical ratings and package designation. The MJ11015G from onsemi exceeds the primary criteria with higher current (30 A), voltage (120 V), and power (200 W) ratings, making it suitable for applications requiring enhanced performance margins.

Parameter Comparison

Parameter	2N6287 (STMicroelectronics)	2N6287 (Microchip Technology)	MJ11015G (onsemi)
Transistor Type	PNP - Darlington	PNP - Darlington	PNP - Darlington
Current - Collector (Ic) (Max)	20 A	20 A	30 A
Voltage - Collector Emitter Breakdown (Max)	100 V	100 V	120 V
Vce Saturation (Max) @ Ib, Ic	3V @ 200mA, 20A	3V @ 200mA, 20A	4V @ 300mA, 30A
Current - Collector Cutoff (Max)	1 mA	1 mA	1 mA
DC Current Gain (hFE) (Min) @ Ic, Vce	750 @ 10A, 3V	1500 @ 1A, 3V	1000 @ 20A, 5V
Power - Max	160 W	175 W	200 W
Frequency - Transition	—	—	4 MHz
Operating Temperature (TJ)	200°C	-65°C ~ 175°C	-55°C ~ 200°C
Package / Case	TO-204AA, TO-3	TO-204AA, TO-3	TO-204AA, TO-3
Mounting Type	Chassis Mount	Through Hole	Through Hole
Product Status	Obsolete	Active	Active
RoHS Status	ROHS3 Compliant	RoHS non-compliant	ROHS3 Compliant

Engineering Selection Recommendations

2N6287 (Microchip Technology): This part provides direct electrical equivalence to the obsolete STMicroelectronics 2N6287, with identical collector current, voltage, and saturation characteristics. The Microchip variant is in active production status, ensuring long-term availability. The part is rated for a slightly higher maximum power dissipation (175 W versus 160 W). Note that this variant is RoHS non-compliant, which may impact suitability for applications subject to RoHS regulations. The operating temperature range is -65°C to 175°C, which is narrower than the original part's 200°C maximum junction temperature.

MJ11015G (onsemi): This part exceeds the electrical specifications of the 2N6287 across multiple parameters: 30 A collector current (versus 20 A), 120 V breakdown voltage (versus 100 V), and 200 W power rating (versus 160 W). The MJ11015G is ROHS3 compliant and rated for -55°C to 200°C operating temperature, matching the original part's maximum junction temperature. The 4 MHz transition frequency specification is provided for this device. This part is suitable for applications requiring enhanced performance margins or where higher current and voltage headroom is beneficial.

Frequently Asked Questions (FAQ)

Q: Can the 2N6287 (Microchip Technology) be used as a direct replacement for the obsolete STMicroelectronics 2N6287?

A: Yes. Both devices share identical electrical specifications for collector current (20 A), collector-emitter breakdown voltage (100 V), and saturation characteristics (3V @ 200mA, 20A). Both use the TO-204AA (TO-3) package. The Microchip variant is in active production, making it the preferred direct substitute. However, verify RoHS compliance requirements for your application, as the Microchip part is RoHS non-compliant.

Q: What are the key differences between the 2N6287 and the MJ11015G?

A: The MJ11015G provides higher electrical ratings: 30 A maximum collector current (versus 20 A), 120 V breakdown voltage (versus 100 V), and 200 W power dissipation (versus 160 W). The MJ11015G includes a 4 MHz transition frequency specification. Both devices use compatible TO-3 packages. The MJ11015G is ROHS3 compliant and supports the full -55°C to 200°C operating temperature range.

Q: Are there mounting type differences between these substitutes?

A: The original 2N6287 (STMicroelectronics) is specified as chassis mount. The Microchip 2N6287 and onsemi MJ11015G are specified as through-hole mounting. All three devices use the TO-204AA (TO-3) package form factor, which is physically compatible. Verify that your PCB layout and thermal management design accommodate through-hole mounting if substituting with the Microchip or onsemi variants.

Q: Which substitute should I select for new designs?

A: For new designs, the MJ11015G (onsemi) is recommended due to its active product status, ROHS3 compliance, full operating temperature range (-55°C to 200°C), and enhanced electrical specifications that provide design margin. The 2N6287 (Microchip Technology) is suitable if exact electrical equivalence to the original part is required and RoHS non-compliance is acceptable for your application.

Q: What is the significance of the DC current gain (hFE) differences?

A: The DC current gain specifications are measured at different bias points. The original 2N6287 specifies 750 @ 10A, 3V. The Microchip 2N6287 specifies 1500 @ 1A, 3V, indicating higher gain at lower collector currents. The MJ11015G specifies 1000 @ 20A, 5V. These differences reflect device design variations but do not prevent substitution, as all devices meet minimum gain requirements for Darlington transistor applications.

Q: Can the MJ11015G be used in applications designed for the 2N6287?

A: Yes. The MJ11015G exceeds all critical electrical specifications of the 2N6287 (higher current, voltage, and power ratings). Applications designed for 20 A at 100 V will operate within the MJ11015G's specifications. However, verify that your circuit design does not depend on the specific saturation voltage or gain characteristics of the original 2N6287, as these differ slightly in the MJ11015G.

Q: What compliance certifications should I verify for my application?

A: All three devices are REACH unaffected and classified as EAR99 for export control purposes. The original 2N6287 (STMicroelectronics) and MJ11015G (onsemi) are ROHS3 compliant. The 2N6287 (Microchip Technology) is RoHS non-compliant. Verify your application's RoHS requirements before selecting a substitute.

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