2N6284 NPN Darlington Transistor Equivalent & Substitute Parts

Part Overview

The 2N6284 is an NPN Darlington bipolar junction transistor manufactured by STMicroelectronics, rated for 100 V collector-emitter breakdown voltage and 20 A maximum collector current. This device is classified as obsolete, which necessitates identification of equivalent and substitute components for ongoing design support and procurement.

The 2N6284 is housed in a TO-3 chassis mount package and delivers 160 W maximum power dissipation. Darlington configuration provides high DC current gain (750 minimum at 10 A, 3 V), making it suitable for high-current switching and amplification applications requiring moderate voltage ratings.

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN - Darlington	—
Current - Collector (Ic) Max	20	A
Voltage - Collector Emitter Breakdown (Max)	100	V
Vce Saturation (Max)	3	V @ 200mA, 20A
DC Current Gain (hFE) Min	750	@ 10A, 3V
Power - Max	160	W
Operating Temperature (TJ)	200	°C
Package / Case	TO-204AA, TO-3	—
Mounting Type	Chassis Mount	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the 2N6284 is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Transistor type: NPN - Darlington configuration
Collector current rating: minimum 20 A
Collector-emitter breakdown voltage: minimum 100 V
Package compatibility: TO-3 or TO-204AA form factor
Saturation voltage and DC current gain within acceptable operating ranges

Direct Equivalent (Preferred): The 2N6284G from onsemi is a direct equivalent, maintaining identical electrical specifications (20 A, 100 V, 160 W) while offering active product status and improved temperature operating range (-65°C to 200°C). This part is functionally interchangeable with identical pin configuration and performance characteristics.

Similar Substitutes (Conditional): The MJ11016G and MJ11012G are higher-performance alternatives with increased collector current ratings (30 A) and power dissipation (200 W). These parts accommodate applications requiring greater current capacity or thermal headroom. The MJ11016G maintains 120 V breakdown voltage, exceeding the 2N6284 specification. The MJ11012G operates at 60 V, suitable only for applications with reduced voltage requirements.

The Microchip Technology 2N6284 variant shares identical electrical ratings but exhibits higher DC current gain (1500 @ 1A, 3V) and increased power rating (175 W), with non-compliant RoHS status.

Parameter Comparison

Parameter	2N6284 (STMicroelectronics)	2N6284G (onsemi)	2N6284 (Microchip)	MJ11016G (onsemi)	MJ11012G (onsemi)
Transistor Type	NPN - Darlington	NPN - Darlington	NPN - Darlington	NPN - Darlington	NPN - Darlington
Ic (Max)	20 A	20 A	20 A	30 A	30 A
Vce Breakdown (Max)	100 V	100 V	100 V	120 V	60 V
Vce Saturation (Max)	3 V @ 200mA, 20A	3 V @ 200mA, 20A	3 V @ 200mA, 20A	4 V @ 300mA, 30A	4 V @ 300mA, 30A
DC Current Gain (hFE) Min	750 @ 10A, 3V	750 @ 10A, 3V	1500 @ 1A, 3V	1000 @ 20A, 5V	1000 @ 20A, 5V
Power - Max	160 W	160 W	175 W	200 W	200 W
Frequency - Transition	—	—	—	4 MHz	4 MHz
Operating Temperature (TJ)	200°C	-65°C ~ 200°C	-65°C ~ 200°C	-55°C ~ 200°C	-55°C ~ 200°C
Mounting Type	Chassis Mount	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-204AA, TO-3	TO-204AA, TO-3	TO-204AA, TO-3	TO-204AA, TO-3	TO-204AA, TO-3
Product Status	Obsolete	Active	Active	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	RoHS non-compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Direct Replacement (Recommended): The 2N6284G from onsemi is the preferred substitute for the obsolete STMicroelectronics 2N6284. This part maintains identical electrical specifications, ROHS3 compliance, and active product status. The extended operating temperature range (-65°C to 200°C) provides improved thermal margin compared to the original device. Through-hole mounting is compatible with standard PCB assembly processes.

Higher-Performance Alternatives: The MJ11016G and MJ11012G offer increased current capacity (30 A) and power dissipation (200 W), suitable for applications requiring thermal headroom or higher current switching. Both parts maintain ROHS3 compliance and active product status. Selection between these variants depends on voltage requirement: MJ11016G for 120 V applications, MJ11012G for 60 V applications.

Conditional Substitute: The Microchip Technology 2N6284 variant provides identical electrical ratings with enhanced DC current gain and power rating. However, RoHS non-compliance restricts use in regulated markets and applications subject to environmental directives.

Compliance Considerations: All recommended substitutes (2N6284G, MJ11016G, MJ11012G) maintain ROHS3 compliance and REACH unaffected status, ensuring regulatory alignment with the original component.

Frequently Asked Questions (FAQ)

Q: Can the 2N6284G directly replace the obsolete 2N6284? A: Yes. The 2N6284G from onsemi is a direct equivalent with identical electrical specifications (20 A, 100 V, 160 W), matching pin configuration, and compatible TO-3 package. The primary difference is active product status and extended operating temperature range.

Q: What is the difference between the 2N6284G and MJ11016G? A: The MJ11016G provides higher collector current (30 A vs. 20 A), increased power dissipation (200 W vs. 160 W), and higher breakdown voltage (120 V vs. 100 V). The MJ11016G is suitable for applications requiring greater current capacity or voltage margin. Both maintain TO-3 package compatibility.

Q: Can the MJ11012G be used in place of the 2N6284? A: The MJ11012G is electrically compatible for current and power requirements but operates at reduced breakdown voltage (60 V vs. 100 V). Use is restricted to applications with maximum operating voltages below 60 V. Higher collector current (30 A) and power rating (200 W) provide performance margin in current-limited designs.

Q: Are all substitute parts RoHS compliant? A: The 2N6284G, MJ11016G, and MJ11012G are ROHS3 compliant. The Microchip Technology 2N6284 variant is RoHS non-compliant and unsuitable for regulated applications.

Q: What mounting differences exist between the original and substitutes? A: The original 2N6284 is specified as chassis mount. All substitute parts (2N6284G, MJ11016G, MJ11012G) are through-hole mounted. Both mounting styles use identical TO-3 package form factor and pin configuration, compatible with standard PCB assembly.

Q: Which substitute offers the best thermal performance? A: The MJ11016G and MJ11012G provide the highest power dissipation rating (200 W vs. 160 W), offering improved thermal margin. Selection depends on voltage and current requirements of the specific application.

Q: Is the Microchip Technology 2N6284 a suitable alternative? A: The Microchip variant matches electrical specifications and offers higher DC current gain and power rating. However, RoHS non-compliance restricts use in regulated markets and applications subject to environmental directives. The 2N6284G is the preferred alternative for compliant designs.

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