2N6248 Equivalent & Substitute Parts Reference

Part Overview

The Microchip Technology 2N6248 is a PNP Power Bipolar Junction Transistor (BJT) with a collector-emitter breakdown voltage of 100 V, collector current rating of 15 A, and a maximum power dissipation of 125 W. The device is housed in a TO-204AD (TO-3) through-hole package and is currently listed as active. In supply chain management and engineering maintenance, it is often critical to identify valid equivalent or substitute transistors to ensure design continuity, repair viability, and inventory flexibility.

Substitution is necessary when managing part shortages, legacy system support, or when specific inventory requirements arise, provided that substitute devices strictly conform to the fundamental electrical and mechanical parameters of the original part.

Substiute Parts

2N6248
Microchip TechnologyIn Stock: 8022N6248 Datasheet
2N6248
Current Part
MJ15016G
onsemiIn Stock: 37426MJ15016G Datasheet
MJ15016G
Similar

Key Parameters

Parameter 2N6248
Manufacturer Microchip Technology
Category Transistors, Bipolar (BJT)
Transistor Type PNP
Current - Collector (Ic) (Max) 15 A
Voltage - Collector Emitter Breakdown (Max) 100 V
Power - Max 125 W
Mounting Type Through Hole
Package / Case TO-204AA, TO-3
Supplier Device Package TO-204AD (TO-3)
Operating Temperature -65°C ~ 200°C (TJ)
Product Status Active

Substitute Part Grouping Explanation

Substitution for the Microchip Technology 2N6248 is determined by cross-referencing critical parameters: transistor type (PNP), collector current rating (Ic max), collector-emitter breakdown voltage (Vce max), power dissipation (P max), package and mounting type (TO-204AA/TO-3, through-hole), and operating temperature range. Only alternate part numbers matching these criteria are included as substitutes.

Parameter Comparison

Parameter 2N6248 (Microchip Technology) MJ15016G (onsemi)
Transistor Type PNP PNP
Current - Collector (Ic) (Max) 15 A 15 A
Voltage - Collector Emitter Breakdown (Max) 100 V 120 V
Power - Max 125 W 115 W
Mounting Type Through Hole Through Hole
Package / Case TO-204AA, TO-3 TO-204AA, TO-3
Operating Temperature -65°C ~ 200°C (TJ) -65°C ~ 200°C (TJ)
Product Status Active Active

Engineering Selection Recommendations

Both the Microchip Technology 2N6248 and the onsemi MJ15016G are listed as active products in the Transistors, Bipolar (BJT) category. The MJ15016G is ROHS3 compliant and REACH unaffected, matching the compliance status required for many regulated environments. The package types and mounting methods are identical per the input specifications. ECCN and HTSUS codes are also aligned.

Frequently Asked Questions (FAQ)

Q1: What parameters must match when selecting a substitute for the 2N6248?
A: Substitution requires matching transistor type (PNP), collector current (Ic max), collector-emitter breakdown voltage (Vce max), power dissipation, package/case format (TO-204AA, TO-3), mounting type (through hole), and operating temperature range.

Q2: Are there any differences in mechanical compatibility between the 2N6248 and the MJ15016G?
A: Both devices utilize the TO-204AA (TO-3) case and through-hole mounting, ensuring equivalent mechanical compatibility.

Q3: Does the substitute MJ15016G meet regulatory compliance requirements?
A: The MJ15016G is ROHS3 compliant and REACH unaffected, matching required international compliance standards as listed.

Q4: How should selection be made between active substitute parts?
A: Selection should be based solely on matching product status (active), compliance certifications, and parameters specified in this reference. No external criteria are introduced.

Q5: What is the significance of product status in substitute part selection?
A: Product status demonstrates current production and support level. Only substitutes with identical active status have been included to ensure longevity and supply consistency.

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