2N6111G Equivalent & Substitute Parts

Part Overview

The 2N6111G is a PNP bipolar junction transistor manufactured by onsemi, housed in a TO-220-3 package for through-hole mounting applications. This device is rated for 30 V collector-emitter breakdown voltage and 7 A maximum collector current, with a maximum power dissipation of 40 W. The 2N6111G is classified as obsolete, making identification of suitable substitute components necessary for ongoing design support and production continuity. Equivalent parts must satisfy the electrical and mechanical requirements of the original specification while maintaining compatibility with existing circuit designs.

Substiute Parts

2N6111G
onsemiIn Stock: 11842N6111G Datasheet
2N6111G
Current Part
BD244CG
onsemiIn Stock: 2156BD244CG Datasheet
BD244CG
Similar

Key Parameters

Parameter Value Unit
Transistor Type PNP
Current - Collector (Ic) (Max) 7 A
Voltage - Collector Emitter Breakdown (Max) 30 V
Power - Max 40 W
Frequency - Transition 10 MHz
Operating Temperature Range -65 to 150 °C (TJ)
Package / Case TO-220-3
Mounting Type Through Hole
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the 2N6111G is determined by the following critical parameters:

Electrical Compatibility Requirements:

  • Transistor polarity must be PNP
  • Collector-emitter breakdown voltage must equal or exceed 30 V
  • Maximum collector current must equal or exceed 7 A
  • Maximum power dissipation must equal or exceed 40 W
  • Operating temperature range must encompass -65°C to 150°C

Mechanical Compatibility Requirements:

  • Package type must be TO-220-3
  • Mounting configuration must be through-hole

Regulatory Compliance:

  • RoHS3 compliance required
  • REACH unaffected status required

The BD244CG meets the mechanical and regulatory requirements but exhibits different electrical characteristics. Substitution feasibility depends on circuit application requirements and tolerance for parameter variations.

Parameter Comparison

Parameter 2N6111G BD244CG Unit
Transistor Type PNP PNP
Current - Collector (Ic) (Max) 7 6 A
Voltage - Collector Emitter Breakdown (Max) 30 100 V
Vce Saturation (Max) @ Ib, Ic 3.5V @ 3A, 7A 1.5V @ 1A, 6A V
Current - Collector Cutoff (Max) 1 700 mA / µA
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 3A, 4V 15 @ 3A, 4V
Power - Max 40 65 W
Frequency - Transition 10 3 MHz
Operating Temperature Range -65 to 150 -65 to 150 °C (TJ)
Package / Case TO-220-3 TO-220-3
Mounting Type Through Hole Through Hole
RoHS Status ROHS3 Compliant ROHS3 Compliant

Engineering Selection Recommendations

2N6111G Status: Obsolete product with 1170 units available in current inventory.

BD244CG Status: Active product with 2121 units available in current inventory.

The BD244CG is an active component suitable for long-term design support and production continuity. Both devices maintain ROHS3 compliance and REACH unaffected status, satisfying regulatory requirements for equivalent component selection.

Electrical Considerations:

The BD244CG provides higher collector-emitter breakdown voltage (100 V versus 30 V), enabling operation in higher voltage applications. However, the BD244CG exhibits lower maximum collector current (6 A versus 7 A) and lower transition frequency (3 MHz versus 10 MHz). The BD244CG demonstrates lower DC current gain (15 versus 30 at 3 A, 4 V) and superior saturation voltage characteristics (1.5 V versus 3.5 V).

Selection between these devices depends on specific circuit requirements regarding voltage rating, current capacity, switching speed, and gain characteristics. The 2N6111G remains suitable for applications requiring the specified 30 V rating and 10 MHz transition frequency. The BD244CG accommodates higher voltage designs and provides enhanced power dissipation capability.

Frequently Asked Questions (FAQ)

Q: Can the BD244CG directly replace the 2N6111G in all applications?

A: Direct replacement depends on circuit requirements. Both devices share identical package type (TO-220-3), mounting configuration (through-hole), and operating temperature range (-65°C to 150°C). The BD244CG provides higher voltage rating (100 V versus 30 V) and power capacity (65 W versus 40 W). However, the BD244CG has lower maximum collector current (6 A versus 7 A) and transition frequency (3 MHz versus 10 MHz). Applications requiring the full 7 A current capacity or 10 MHz switching speed may not be compatible with the BD244CG.

Q: What are the key electrical differences between these devices?

A: The 2N6111G is optimized for 30 V applications with 7 A current capacity and 10 MHz transition frequency. The BD244CG is rated for 100 V operation with 6 A maximum current and 3 MHz transition frequency. The BD244CG exhibits superior saturation voltage (1.5 V versus 3.5 V at comparable conditions) and lower DC current gain (15 versus 30). These differences affect switching speed, power dissipation, and circuit performance.

Q: Are both devices RoHS and REACH compliant?

A: Yes. Both the 2N6111G and BD244CG are ROHS3 compliant and REACH unaffected, satisfying regulatory requirements for equivalent component selection in compliant designs.

Q: What packaging considerations apply to these devices?

A: Both devices are housed in TO-220-3 packages for through-hole mounting. Mechanical compatibility is maintained, allowing identical PCB footprints and thermal management approaches. Supplier device package designation is TO-220 for both components.

Q: Which device should be selected for new designs?

A: The BD244CG is the appropriate choice for new designs, as it maintains active product status with established supply availability. The 2N6111G, classified as obsolete, should be reserved for legacy system support where specific electrical parameters are required.

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