2N6045-AP NPN Darlington Transistor Equivalent & Substitute Parts

Part Overview

The 2N6045-AP is an NPN Darlington bipolar junction transistor manufactured by Micro Commercial Co, rated for 100 V collector-emitter breakdown voltage and 8 A maximum collector current in a TO-220AB through-hole package. This part is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement continuity. The 2N6045-AP delivers 75 W maximum power dissipation and operates across a temperature range of -60°C to 150°C (junction temperature).

Substiute Parts

2N6045-AP

Micro Commercial CoIn Stock: 10682N6045-AP Datasheet

Current PartRFQ

2N6045G

onsemiIn Stock: 11812N6045G Datasheet

DirectRFQ

BDX53CG

onsemiIn Stock: 1788BDX53CG Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the 2N6045-AP are identified based on strict electrical and mechanical parameter alignment within the NPN Darlington transistor category. The substitution criteria are:

Primary Matching Parameters:

• Transistor Type: NPN - Darlington configuration
• Maximum Collector Current (Ic): 8 A
• Collector-Emitter Breakdown Voltage: 100 V
• Package / Case: TO-220-3 (through-hole mounting)
• RoHS Compliance: ROHS3 Compliant

Acceptable Variation Parameters:

• Operating Temperature Range: Minimum -65°C acceptable (vs. -60°C on main part)
• Power Dissipation: 65 W to 75 W range acceptable
• DC Current Gain (hFE): 750 to 1000 minimum acceptable
• Vce Saturation: Variations within specified test conditions acceptable
• Current - Collector Cutoff (ICBO): Up to 500µA acceptable

Substitute parts must maintain electrical performance within these defined boundaries to ensure functional equivalence in circuit applications.

Parameter Comparison

Engineering Selection Recommendations

2N6045G (Direct Substitute - Recommended Primary Choice)

The 2N6045G manufactured by onsemi is the direct equivalent to the 2N6045-AP. Both parts share the same base product number (2N6045) and maintain identical electrical specifications for maximum collector current (8 A), collector-emitter breakdown voltage (100 V), DC current gain (1000 @ 3A, 4V), and power dissipation (75 W). The 2N6045G is currently in active production status, ensuring long-term availability and supply chain continuity. Both parts are ROHS3 compliant and housed in TO-220-3 packages. The 2N6045G operates across -65°C to 150°C, providing a slightly extended lower temperature range compared to the 2N6045-AP. This part is suitable for direct pin-for-pin replacement without circuit modification.

BDX53CG (Similar Substitute - Secondary Option)

The BDX53CG manufactured by onsemi is a similar substitute with compatible electrical characteristics. It maintains the same 8 A maximum collector current, 100 V collector-emitter breakdown voltage, and TO-220-3 package configuration. The BDX53CG is currently in active production. Key differences include reduced maximum power dissipation (65 W vs. 75 W), lower DC current gain minimum (750 @ 3A, 3V vs. 1000 @ 3A, 4V), and higher collector cutoff current (500µA vs. 20µA). The BDX53CG is suitable for applications where the 75 W power rating of the 2N6045-AP is not fully utilized and where the lower current gain is acceptable for the circuit design. Both parts are ROHS3 compliant and operate across -65°C to 150°C.

Selection between 2N6045G and BDX53CG depends on specific application power dissipation requirements and current gain specifications. For direct replacement with no design changes, 2N6045G is the preferred choice.

Frequently Asked Questions (FAQ)

Q: Can the 2N6045G directly replace the 2N6045-AP without any circuit modifications?

A: Yes. The 2N6045G is the direct equivalent part with identical electrical specifications for collector current (8 A), breakdown voltage (100 V), DC current gain (1000 @ 3A, 4V), and power dissipation (75 W). Both parts use the TO-220-3 package and are pin-compatible. No circuit modifications are required.

Q: What is the primary difference between the 2N6045G and BDX53CG?

A: The 2N6045G maintains the full 75 W power dissipation rating and 1000 minimum DC current gain, matching the original 2N6045-AP specifications. The BDX53CG has reduced power dissipation (65 W) and lower DC current gain (750 minimum). Both share the same 8 A collector current and 100 V breakdown voltage ratings. Selection depends on whether your application requires the higher power rating and current gain of the 2N6045G.

Q: Are both substitute parts RoHS compliant?

A: Yes. Both the 2N6045G and BDX53CG are ROHS3 compliant, matching the compliance status of the 2N6045-AP.

Q: What is the temperature operating range for the substitute parts?

A: Both 2N6045G and BDX53CG operate across -65°C to 150°C (junction temperature), which extends the lower temperature limit by 5°C compared to the 2N6045-AP (-60°C to 150°C). This provides improved performance in cold-temperature applications.

Q: Why is the 2N6045-AP listed as obsolete?

A: The 2N6045-AP is obsolete due to manufacturer discontinuation by Micro Commercial Co. The 2N6045G from onsemi is the active production equivalent, ensuring continued availability and supply chain support for new designs and legacy system maintenance.

Q: Can I use BDX53CG in a high-power application requiring 75 W dissipation?

A: No. The BDX53CG is rated for 65 W maximum power dissipation. For applications requiring 75 W dissipation capability, use the 2N6045G, which maintains the full 75 W rating of the original 2N6045-AP.

Q: Are the packaging formats different between the substitute parts?

A: All three parts (2N6045-AP, 2N6045G, and BDX53CG) use the TO-220-3 through-hole package. The 2N6045-AP supplier package is designated TO-220AB, while both substitute parts use TO-220 designation. These are mechanically and electrically compatible package variants suitable for identical PCB layouts.