2N6040G Equivalent & Substitute Parts

Part Overview

The 2N6040G is a PNP Darlington bipolar junction transistor manufactured by onsemi, rated for 60 V collector-emitter breakdown voltage and 8 A maximum collector current in a TO-220 through-hole package. This device is classified as obsolete, necessitating identification of active equivalent and substitute parts for ongoing design requirements and procurement needs. The 2N6040G remains available in inventory (2896 pcs) but alternative components with comparable or enhanced electrical characteristics are available from active product lines.

Key Parameters

Parameter	Value	Unit
Transistor Type	PNP - Darlington	—
Maximum Collector Current (Ic)	8	A
Collector-Emitter Breakdown Voltage (Max)	60	V
Maximum Power Dissipation	75	W
DC Current Gain (hFE Min)	1000	@ 4A, 4V
Operating Temperature Range	-65 to 150	°C (TJ)
Package Type	TO-220-3	Through Hole
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the 2N6040G is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Transistor topology: PNP Darlington configuration
Collector current rating: minimum 8 A
Collector-emitter breakdown voltage: minimum 60 V
Package type: TO-220-3 through-hole mounting
Operating temperature range: -65°C to 150°C (TJ)
DC current gain (hFE): minimum 1000

Substitute Parts Identified:

TIP127G (onsemi): Active product with 100 V breakdown voltage and 5 A collector current. Exceeds voltage rating but operates below current specification. Maintains identical operating temperature range and hFE minimum.
TIP105 (NTE Electronics, Inc): Active product with 60 V breakdown voltage and 8 A collector current. Matches primary electrical specifications exactly. Provides 80 W power dissipation versus 75 W of main part. Includes 4 MHz transition frequency specification.

Parameter Comparison

Parameter	2N6040G (Main)	TIP127G	TIP105	Unit
Manufacturer	onsemi	onsemi	NTE Electronics, Inc	—
Product Status	Obsolete	Active	Active	—
Transistor Type	PNP - Darlington	PNP - Darlington	PNP - Darlington	—
Ic (Max)	8	5	8	A
Vce Breakdown (Max)	60	100	60	V
Power - Max	75	2	80	W
DC Current Gain (hFE Min)	1000 @ 4A, 4V	1000 @ 3A, 3V	1000 @ 3A, 4V	—
Operating Temperature	-65 to 150	-65 to 150	-65 to 150	°C (TJ)
Package / Case	TO-220-3	TO-220-3	TO-220-3	—
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	RoHS non-compliant	—

Engineering Selection Recommendations

TIP105 (NTE Electronics, Inc) is the primary substitute for the 2N6040G. This part maintains electrical equivalence across all critical parameters: 60 V collector-emitter breakdown voltage, 8 A maximum collector current, and identical operating temperature range. The TIP105 provides superior power dissipation capability (80 W versus 75 W) and includes specified transition frequency (4 MHz). The part is in active production status with substantial inventory availability (44,200 pcs). However, the TIP105 carries RoHS non-compliant status, which may restrict use in applications requiring RoHS3 compliance.

TIP127G (onsemi) serves as an alternative for applications where voltage headroom exceeds 60 V. This part maintains ROHS3 compliance and active product status but operates at reduced collector current (5 A maximum) and significantly reduced power dissipation (2 W). The TIP127G is suitable only for circuits where the 8 A current requirement can be reduced or where higher voltage operation is beneficial.

For applications requiring RoHS3 compliance with full electrical equivalence to the 2N6040G, the obsolete status of the main part necessitates design review or sourcing of remaining inventory stock.

Frequently Asked Questions (FAQ)

Q: Can TIP105 directly replace 2N6040G in all applications?

A: TIP105 provides direct electrical substitution for applications not requiring RoHS3 compliance. The part matches collector current (8 A), collector-emitter breakdown voltage (60 V), and operating temperature range (-65°C to 150°C). Mechanical compatibility is confirmed through identical TO-220-3 package specification. RoHS compliance status differs between parts.

Q: What is the primary limitation of TIP127G as a substitute?

A: TIP127G operates at maximum collector current of 5 A, which is 37.5% below the 2N6040G specification of 8 A. This part is suitable only for circuits where current requirements do not exceed 5 A. The elevated collector-emitter breakdown voltage (100 V) provides additional voltage margin but does not compensate for reduced current capacity.

Q: Are all substitute parts available in TO-220-3 package?

A: Yes. Both TIP127G and TIP105 are specified in TO-220-3 through-hole package configuration, matching the mechanical form factor of the 2N6040G. Mounting compatibility is confirmed across all three parts.

Q: What is the significance of the power dissipation difference between 2N6040G (75 W) and TIP105 (80 W)?

A: TIP105 provides 5 W additional power dissipation capacity, representing a 6.7% improvement. This enhancement provides additional thermal margin in applications operating near the 75 W limit of the 2N6040G. Both parts operate within identical temperature range (-65°C to 150°C).

Q: How do DC current gain specifications compare across the three parts?

A: All three parts specify minimum DC current gain (hFE) of 1000, meeting Darlington transistor performance standards. Measurement conditions vary slightly: 2N6040G at 4A/4V, TIP127G at 3A/3V, and TIP105 at 3A/4V. These variations reflect standard characterization practices and do not indicate functional differences in typical applications.

Q: What compliance certifications should be verified before part selection?

A: The 2N6040G and TIP127G carry ROHS3 compliance certification. TIP105 is RoHS non-compliant. Applications subject to RoHS3 requirements must use either the 2N6040G (if inventory is available) or TIP127G (with current derating). REACH status is unaffected for all three parts. ECCN classification is EAR99 for all parts.

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