2N6039 Equivalent & Substitute Parts

Part Overview

The 2N6039 is an NPN Darlington bipolar junction transistor manufactured by STMicroelectronics, rated for 80 V collector-emitter breakdown voltage and 4 A maximum collector current in a Through Hole SOT-32-3 package. This device is classified as obsolete, making equivalent substitute parts necessary for new designs and ongoing production requirements. The 2N6039 delivers 40 W maximum power dissipation and features a minimum DC current gain of 750 at specified operating conditions, suitable for switching and amplification applications requiring moderate current handling and voltage ratings.

Substiute Parts

2N6039

STMicroelectronicsIn Stock: 22482N6039 Datasheet

Current PartRFQ

BD679A

STMicroelectronicsIn Stock: 1566BD679A Datasheet

DirectRFQ

BD679AS

onsemiIn Stock: 1998BD679AS Datasheet

DirectRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the 2N6039 is determined by strict equivalence across the following electrical and mechanical parameters:

Critical Matching Parameters:

• Transistor Type: NPN - Darlington configuration
• Maximum Collector Current (Ic): 4 A
• Maximum Collector-Emitter Breakdown Voltage: 80 V
• Maximum Power Dissipation: 40 W
• DC Current Gain (hFE): Minimum 750 @ 2A, 3V
• Maximum Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package Compatibility: TO-225AA or TO-126-3

The substitute parts BD679A and BD679AS meet all critical electrical specifications and are compatible with the mechanical and thermal requirements of the 2N6039. Both substitute parts maintain active product status, ensuring long-term availability and supply chain continuity. Compliance certifications (RoHS3, REACH Unaffected, EAR99) are equivalent across all parts.

Parameter Comparison

Engineering Selection Recommendations

For New Designs and Production:

The BD679A (STMicroelectronics) and BD679AS (onsemi) are direct functional equivalents to the obsolete 2N6039. Both substitute parts carry active product status, ensuring availability and supply chain stability. Selection between BD679A and BD679AS depends on procurement requirements and preferred supplier relationships.

Compliance Considerations:

All three parts maintain identical RoHS3 compliance and REACH Unaffected status, satisfying regulatory requirements for electronic component use in regulated industries. ECCN classification (EAR99) is consistent across all parts, indicating no export control restrictions.

Electrical Performance:

The substitute parts demonstrate equivalent or superior electrical characteristics. The BD679A and BD679AS exhibit lower Vce saturation voltage (2.8V versus 3V) at specified test conditions, indicating improved switching efficiency. The higher collector cutoff current (500µA versus 100µA) in substitute parts remains within acceptable limits for Darlington transistor applications and does not compromise circuit functionality.

Packaging and Thermal Management:

All parts support identical Through Hole mounting and package options (TO-225AA, TO-126-3), enabling direct mechanical substitution without PCB redesign. Maximum operating temperature remains 150°C (TJ) across all parts, maintaining thermal design margins.

Frequently Asked Questions (FAQ)

Q: Can BD679A and BD679AS be used interchangeably with the 2N6039?

A: Yes. Both substitute parts meet all critical electrical specifications (4 A collector current, 80 V breakdown voltage, 40 W power dissipation, 750 minimum hFE) and mechanical requirements (Through Hole mounting, TO-225AA/TO-126-3 packages). The primary difference is manufacturer: BD679A is manufactured by STMicroelectronics, while BD679AS is manufactured by onsemi.

Q: What is the difference between BD679A and BD679AS?

A: Both parts are electrically equivalent and meet identical specifications. The difference is manufacturer (STMicroelectronics versus onsemi) and packaging format (Tube versus Bulk). Selection depends on supplier availability and procurement preferences. Electrical performance and pin compatibility are identical.

Q: Are there any performance differences between the 2N6039 and its substitutes?

A: The substitute parts exhibit lower Vce saturation voltage (2.8V versus 3V) at specified test conditions, representing improved switching efficiency. This difference is beneficial for circuit performance and does not introduce compatibility issues. The higher collector cutoff current in substitutes (500µA versus 100µA) remains within acceptable operating parameters for Darlington transistor applications.

Q: Do the substitute parts require PCB modifications?

A: No. The BD679A and BD679AS maintain identical Through Hole mounting and package configurations (TO-225AA, TO-126-3) as the 2N6039. Direct mechanical and electrical substitution is possible without PCB redesign.

Q: Are regulatory certifications maintained with substitute parts?

A: Yes. All substitute parts maintain RoHS3 compliance, REACH Unaffected status, and EAR99 ECCN classification identical to the 2N6039. No regulatory or compliance issues arise from substitution.

Q: Which substitute part should be selected for new production?

A: Both BD679A and BD679AS are suitable for new production. Selection depends on supplier availability, lead time, and procurement cost. Electrical and mechanical specifications are equivalent. Verify supplier inventory and delivery schedules to determine the optimal choice for your production timeline.