2N6036 Equivalent & Substitute Parts

Part Overview

The 2N6036 is a PNP Darlington bipolar junction transistor manufactured by onsemi, rated for 80 V collector-emitter breakdown voltage and 4 A maximum collector current in a TO-126 through-hole package. This component is classified as obsolete, making equivalent substitute parts necessary for new designs and ongoing production requirements. The 2N6036 delivers 40 W maximum power dissipation with a minimum DC current gain of 750 at specified operating conditions.

Substiute Parts

2N6036
onsemiIn Stock: 16542N6036 Datasheet
2N6036
Current Part
BD680
STMicroelectronicsIn Stock: 8231BD680 Datasheet
BD680
Similar

Key Parameters

Parameter Value Unit
Transistor Type PNP - Darlington
Current - Collector (Ic) Max 4 A
Voltage - Collector Emitter Breakdown (Max) 80 V
Power - Max 40 W
DC Current Gain (hFE) Min 750
Operating Temperature Range -65 to 150 °C
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3

Substitute Part Grouping Explanation

Substitute parts for the 2N6036 are identified based on electrical and mechanical parameter equivalence within the PNP Darlington transistor category. The substitution criteria are:

  • Transistor Type: PNP - Darlington configuration
  • Current Rating: 4 A maximum collector current
  • Voltage Rating: 80 V collector-emitter breakdown voltage
  • Power Dissipation: 40 W maximum
  • DC Current Gain: Minimum 750 at specified conditions
  • Mounting Configuration: Through-hole technology
  • Package Compatibility: TO-126 or equivalent footprint

The BD680 from STMicroelectronics meets these electrical specifications and maintains mechanical compatibility through its SOT-32-3 package designation, which is electrically and mechanically equivalent to the TO-126-3 footprint.

Parameter Comparison

Parameter 2N6036 (onsemi) BD680 (STMicroelectronics) Unit
Transistor Type PNP - Darlington PNP - Darlington
Current - Collector (Ic) Max 4 4 A
Voltage - Collector Emitter Breakdown (Max) 80 80 V
Power - Max 40 40 W
DC Current Gain (hFE) Min 750 @ 2A, 3V 750 @ 1.5A, 3V
Operating Temperature (Max) 150 150 °C
Mounting Type Through Hole Through Hole
Package / Case TO-225AA, TO-126-3 TO-225AA, TO-126-3
Product Status Obsolete Active
RoHS Status RoHS non-compliant ROHS3 Compliant

Engineering Selection Recommendations

The BD680 is the direct electrical and mechanical equivalent for the 2N6036. Selection of the BD680 is supported by the following factors:

  • Product Status: The BD680 maintains active production status, ensuring long-term availability and supply chain continuity, whereas the 2N6036 is obsolete.
  • Regulatory Compliance: The BD680 is ROHS3 compliant, meeting current environmental and regulatory requirements. The 2N6036 is RoHS non-compliant and does not satisfy modern procurement standards.
  • Electrical Equivalence: Both devices share identical maximum ratings for collector current (4 A), collector-emitter breakdown voltage (80 V), and power dissipation (40 W).
  • Mechanical Compatibility: Both transistors utilize through-hole mounting in TO-126-3 package configuration, enabling direct PCB footprint compatibility.
  • Thermal Performance: Both devices operate across the same maximum junction temperature of 150°C.

For new designs and production transitions, the BD680 is the appropriate selection. For legacy system maintenance where the 2N6036 is currently deployed, the BD680 provides direct substitution without circuit redesign.

Frequently Asked Questions (FAQ)

Q: Can the BD680 be used as a direct replacement for the 2N6036 in existing circuits?

A: Yes. The BD680 is electrically and mechanically equivalent to the 2N6036. Both devices share identical maximum ratings for collector current, collector-emitter breakdown voltage, and power dissipation. The through-hole TO-126-3 package footprint is identical, enabling direct PCB substitution without circuit modification.

Q: What are the key differences between the 2N6036 and BD680?

A: The primary differences are product status and regulatory compliance. The 2N6036 is obsolete and RoHS non-compliant, while the BD680 is in active production and ROHS3 compliant. The BD680 also specifies a lower maximum collector cutoff current (500µA versus 100µA) and different saturation voltage conditions, but these variations do not affect functional equivalence in standard applications.

Q: Are there package differences between these two transistors?

A: Both transistors are specified in TO-126-3 through-hole packages. The BD680 is supplied in SOT-32-3 packaging designation, which is electrically and mechanically equivalent to the TO-126-3 footprint. Direct PCB mounting compatibility is maintained.

Q: Does the BD680 meet current regulatory requirements?

A: Yes. The BD680 is ROHS3 compliant and REACH unaffected, satisfying current environmental and regulatory standards. The 2N6036 is RoHS non-compliant and does not meet modern procurement requirements.

Q: What is the operating temperature range for the BD680?

A: The BD680 operates with a maximum junction temperature of 150°C, matching the 2N6036 specification. The 2N6036 specifies a minimum operating temperature of -65°C; the BD680 datasheet provides only the maximum temperature specification in the supplied parameters.

Q: Can inventory of 2N6036 components be replaced with BD680 stock?

A: Yes. The BD680 is functionally and mechanically equivalent and is available in significantly higher inventory quantities (8200 pieces versus 1597 pieces for the 2N6036). Transition to BD680 stock is recommended for supply chain optimization and regulatory compliance.

Request Quote (Ships tomorrow)