2N6036 Equivalent & Substitute Parts

Part Overview

The 2N6036 is a PNP Darlington bipolar junction transistor manufactured by STMicroelectronics, rated for 80 V collector-emitter breakdown voltage and 4 A maximum collector current in a Through Hole SOT-32 package. This device is classified as obsolete, making equivalent substitute parts necessary for ongoing design support, maintenance, and production continuity. The 2N6036 delivers 40 W maximum power dissipation with a minimum DC current gain of 750 at specified operating conditions, suitable for switching and amplification applications requiring moderate power handling in legacy systems.

Substiute Parts

2N6036

STMicroelectronicsIn Stock: 16452N6036 Datasheet

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MJE702G

onsemiIn Stock: 37888MJE702G Datasheet

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MJE703G

onsemiIn Stock: 2418MJE703G Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the 2N6036 is determined by strict electrical and mechanical parameter matching within the PNP Darlington transistor category. The primary substitution criteria are:

Electrical Parameters:

• Collector current rating: 4 A maximum
• Collector-emitter breakdown voltage: 80 V minimum
• Power dissipation: 40 W maximum
• DC current gain: minimum 750 at specified test conditions
• Collector cutoff current: 100 µA maximum

Mechanical Parameters:

• Mounting type: Through Hole
• Package compatibility: TO-225AA or TO-126-3 case styles
• Supplier device package: SOT-32 or TO-126

Compliance Parameters:

• RoHS3 compliance required
• REACH unaffected status
• Moisture sensitivity level: 1 (Unlimited)

The substitute parts MJE702G and MJE703G, both manufactured by onsemi, meet all electrical specifications and compliance requirements. Both devices are rated for 4 A collector current, 80 V breakdown voltage, and 40 W power dissipation. Both are Through Hole mounted in TO-126 packages and maintain ROHS3 compliance and REACH unaffected status.

Parameter Comparison

Engineering Selection Recommendations

MJE702G Selection: The MJE702G is a direct electrical equivalent to the 2N6036, meeting all core electrical specifications: 4 A collector current, 80 V breakdown voltage, 40 W power dissipation, and 750 minimum DC current gain. The MJE702G extends the operating temperature range to -55°C to 150°C, providing enhanced thermal performance compared to the 2N6036. Both devices maintain ROHS3 compliance and REACH unaffected status. The MJE702G is supplied in TO-126 package format with 37,790 units in current inventory stock.

MJE703G Selection: The MJE703G is functionally equivalent to the 2N6036 across all critical electrical parameters: 4 A collector current, 80 V breakdown voltage, 40 W power dissipation, and 750 minimum DC current gain. The MJE703G also extends the operating temperature range to -55°C to 150°C. Both devices are ROHS3 compliant and REACH unaffected. The MJE703G is supplied in TO-126 package format with 2,400 units in current inventory stock. The MJE703G exhibits lower Vce saturation voltage (2.8V @ 40mA, 2A) compared to the 2N6036 (3V @ 40mA, 4A), indicating improved switching efficiency at specified test conditions.

Both substitute parts are classified as obsolete, consistent with the 2N6036 product status. Selection between MJE702G and MJE703G depends on application-specific saturation voltage requirements and inventory availability.

Frequently Asked Questions (FAQ)

Q: Can the MJE702G or MJE703G be used as direct replacements for the 2N6036 in existing designs?

A: Yes. Both MJE702G and MJE703G meet all electrical specifications required by the 2N6036: 4 A maximum collector current, 80 V collector-emitter breakdown voltage, 40 W maximum power dissipation, and 750 minimum DC current gain. Both are Through Hole mounted devices in compatible TO-126 packages. Compliance certifications (ROHS3, REACH unaffected) are identical across all three devices.

Q: What is the difference between the MJE702G and MJE703G?

A: Both devices share identical electrical ratings (4 A, 80 V, 40 W, 750 hFE). The primary differences are in saturation voltage characteristics and inventory availability. The MJE703G exhibits lower Vce saturation voltage (2.8V @ 40mA, 2A) compared to MJE702G (2.5V @ 30mA, 1.5A), indicating different switching performance at specified test points. MJE702G has higher inventory availability (37,790 units) versus MJE703G (2,400 units).

Q: Are there package compatibility concerns when substituting the 2N6036 with MJE702G or MJE703G?

A: The 2N6036 is supplied in SOT-32 package format. Both MJE702G and MJE703G are supplied in TO-126 package format. Both package styles are Through Hole mounted and compatible with standard PCB footprints designed for TO-225AA or TO-126-3 case styles. Physical dimensions and pin configurations differ; PCB layout verification is required for mechanical fit.

Q: Do the substitute parts support the same operating temperature range as the 2N6036?

A: The 2N6036 is rated for 150°C maximum junction temperature. Both MJE702G and MJE703G extend the operating temperature range to -55°C to 150°C, providing enhanced low-temperature performance. Applications limited to the 2N6036 upper temperature specification (150°C) are fully supported by both substitute devices.

Q: Are all three devices (2N6036, MJE702G, MJE703G) RoHS3 compliant?

A: Yes. The 2N6036, MJE702G, and MJE703G are all ROHS3 compliant and REACH unaffected. All three devices meet current environmental and regulatory requirements for electronic component manufacturing and distribution.

Q: What is the collector cutoff current specification for these devices?

A: All three devices—2N6036, MJE702G, and MJE703G—are rated for a maximum collector cutoff current of 100 µA. This parameter defines the maximum leakage current when the transistor is in the off state and is identical across all substitute options.