2N6035G Equivalent & Substitute Parts

Part Overview

The 2N6035G is a PNP Darlington bipolar junction transistor manufactured by onsemi, rated for 60 V collector-emitter breakdown voltage and 4 A maximum collector current in a TO-126 through-hole package. This device is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and production continuity. The 2N6035G is suitable for applications requiring moderate voltage and current switching with Darlington configuration benefits, including high current gain and reduced base drive requirements.

Substiute Parts

2N6035G

onsemiIn Stock: 28842N6035G Datasheet

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MJE703G

onsemiIn Stock: 2418MJE703G Datasheet

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BD678

STMicroelectronicsIn Stock: 1259BD678 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the 2N6035G is determined by the following critical parameters:

Electrical Compatibility Requirements:

• Transistor type must be PNP - Darlington configuration
• Collector current rating must be equal to or greater than 4 A
• Collector-emitter breakdown voltage must be equal to or greater than 60 V
• Power dissipation must be equal to or greater than 40 W
• DC current gain (hFE) must meet or exceed 750 @ specified test conditions

Mechanical Compatibility Requirements:

• Mounting type must be through-hole
• Package must be compatible with TO-126 footprint (TO-225AA, TO-126-3 designations)

Compliance Requirements:

• RoHS3 compliance required
• REACH unaffected status required

The substitute parts identified—MJE703G and BD678—satisfy these criteria with the following distinctions:

MJE703G provides higher voltage rating (80 V vs. 60 V) while maintaining identical current and power specifications, making it suitable for applications with higher voltage margins.

BD678 maintains identical voltage and current ratings as the 2N6035G but uses an alternative package designation (SOT-32-3) and is manufactured by STMicroelectronics with active product status, providing long-term availability.

Parameter Comparison

Engineering Selection Recommendations

For Direct Replacement (Identical Specifications): BD678 is the preferred substitute when direct functional equivalence is required. Although manufactured by STMicroelectronics rather than onsemi, it maintains identical voltage (60 V) and current (4 A) ratings, matching power dissipation (40 W), and achieves the required DC current gain specification. BD678 holds active product status, ensuring long-term availability and supply chain continuity. Both the 2N6035G and BD678 are RoHS3 compliant and REACH unaffected, meeting regulatory requirements for new designs.

For Higher Voltage Margin Applications: MJE703G provides a voltage rating increase to 80 V while preserving the 4 A current and 40 W power specifications. This substitute is appropriate for designs requiring additional voltage headroom or operating in environments with voltage transients. MJE703G is also onsemi-manufactured and RoHS3 compliant. However, MJE703G is classified as obsolete, similar to the 2N6035G, which may limit long-term availability.

Compliance Considerations: All three parts satisfy RoHS3 compliance and REACH unaffected status, making them suitable for applications subject to environmental regulations. Selection should prioritize BD678 for new designs requiring long-term production support due to its active product status.

Frequently Asked Questions (FAQ)

Q: Can MJE703G be used as a direct replacement for 2N6035G?

A: MJE703G is electrically compatible with 2N6035G for applications where the higher 80 V rating does not create design conflicts. Both parts share identical 4 A current and 40 W power ratings, matching DC current gain specifications. However, MJE703G exhibits lower saturation voltage (2.8 V vs. 3.0 V), which may affect switching characteristics in some circuits. Both parts are obsolete, so availability should be verified before design commitment.

Q: Is BD678 a suitable replacement despite being manufactured by STMicroelectronics?

A: Yes. BD678 maintains identical electrical specifications to 2N6035G: 60 V breakdown voltage, 4 A collector current, and 40 W power dissipation. The primary advantage of BD678 is its active product status, ensuring continued manufacturing and supply availability. Both parts are RoHS3 compliant and REACH unaffected. The manufacturer change does not affect functional compatibility when electrical parameters match.

Q: What is the difference between TO-126 and SOT-32-3 packages?

A: Both TO-126 and SOT-32-3 are through-hole package designations for power transistors with three leads (base, collector, emitter). The designations reflect different standardization systems but are mechanically and electrically compatible for PCB mounting. Verify footprint compatibility with your specific PCB design before substitution.

Q: Why does BD678 have higher collector cutoff current (500 µA vs. 100 µA)?

A: The higher collector cutoff current specification for BD678 reflects manufacturing process differences between onsemi and STMicroelectronics. This parameter indicates leakage current in the off state. For most switching applications, this difference is not functionally significant, but designs with strict leakage requirements should evaluate circuit performance with the higher specification.

Q: Are all three parts suitable for new product designs?

A: BD678 is the only part with active product status and is recommended for new designs. Both 2N6035G and MJE703G are obsolete and should be used only for legacy product support or when existing inventory is available. For new designs, BD678 provides regulatory compliance (RoHS3, REACH unaffected) and long-term supply assurance.

Q: What is the operating temperature difference between 2N6035G and MJE703G?

A: 2N6035G operates from −65°C to 150°C, while MJE703G operates from −55°C to 150°C. The 2N6035G provides 10°C lower minimum operating temperature. For applications requiring operation below −55°C, 2N6035G is the appropriate choice. For standard industrial applications, this difference is typically not significant.