2N5962 Equivalent & Substitute Parts

Part Overview

The 2N5962 is an NPN bipolar junction transistor (BJT) manufactured by onsemi, designed for general-purpose switching and amplification applications. The device features a maximum collector current of 100 mA, collector-emitter breakdown voltage of 45 V, and power dissipation capability of 625 mW in a Through Hole TO-92-3 package. The 2N5962 is classified as obsolete, making identification of functionally equivalent substitute parts necessary for ongoing design support and procurement continuity.

Substiute Parts

2N5962
onsemiIn Stock: 44232N5962 Datasheet
2N5962
Current Part
2N5232A PBFREE
Central Semiconductor CorpIn Stock: 178042N5232A PBFREE Datasheet
2N5232A PBFREE
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Key Parameters

Parameter Value Unit
Transistor Type NPN
Current - Collector (Ic) Max 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V
Power - Max 625 mW
Mounting Type Through Hole
Package / Case TO-92-3
Operating Temperature Range -55 to 150 °C

Substitute Part Grouping Explanation

Substitution of the 2N5962 is determined by the following critical parameters:

Electrical Compatibility Requirements:

  • Transistor type must be NPN
  • Maximum collector current must be equal to or greater than 100 mA
  • Collector-emitter breakdown voltage must be equal to or greater than 45 V
  • Maximum power dissipation must be equal to or greater than 625 mW
  • Operating temperature range must encompass or exceed -55°C to 150°C

Mechanical Compatibility Requirements:

  • Mounting type must be Through Hole
  • Package must be TO-92-3 (TO-226-3 / TO-226AA)

The 2N5232A PBFREE meets all substitution criteria. It maintains NPN polarity, supports 100 mA collector current, provides 50 V breakdown voltage (exceeding the 45 V requirement), dissipates 625 mW, and operates across -65°C to 150°C (exceeding the lower temperature bound). The device is packaged in TO-92-3 Through Hole configuration and is classified as Active with RoHS3 compliance.

Parameter Comparison

Parameter 2N5962 2N5232A PBFREE Unit
Transistor Type NPN NPN
Current - Collector (Ic) Max 100 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 50 V
Vce Saturation (Max) 200 mV @ 500µA, 10mA 125 mV @ 1mA, 10mA mV
Current - Collector Cutoff (Max) 2 30 nA
DC Current Gain (hFE) Min 600 @ 10mA, 5V 250 @ 2mA, 5V
Power - Max 625 625 mW
Operating Temperature Range -55 to 150 -65 to 150 °C
Mounting Type Through Hole Through Hole
Package / Case TO-92-3 TO-92-3
Product Status Obsolete Active

Engineering Selection Recommendations

2N5232A PBFREE is the qualified substitute for the 2N5962. Selection rationale is based on the following factors:

Product Status: The 2N5962 is obsolete, whereas the 2N5232A PBFREE is Active. Active status ensures ongoing availability and manufacturing support.

Regulatory Compliance: The 2N5232A PBFREE carries RoHS3 compliance certification, meeting current environmental and material restriction standards. Both devices are REACH Unaffected and classified under ECCN EAR99.

Electrical Performance: The 2N5232A PBFREE exceeds the minimum electrical requirements of the 2N5962 across all critical parameters. The 50 V breakdown voltage provides a 5 V margin above the 45 V specification. Maximum collector current and power dissipation are identical at 100 mA and 625 mW respectively. The extended operating temperature range (-65°C to 150°C) provides additional thermal margin.

Mechanical Compatibility: Both devices utilize identical Through Hole TO-92-3 packaging, ensuring direct physical substitution without circuit board redesign.

Inventory Availability: The 2N5232A PBFREE maintains substantial stock levels (17,706 units), supporting procurement continuity.

Frequently Asked Questions (FAQ)

Q: Can the 2N5232A PBFREE be used as a direct replacement for the 2N5962 in existing designs?

A: Yes. The 2N5232A PBFREE meets all electrical and mechanical substitution criteria. Both devices are NPN transistors with identical maximum collector current (100 mA) and power dissipation (625 mW), operate in the same Through Hole TO-92-3 package, and support the required operating temperature range. The 2N5232A PBFREE provides higher breakdown voltage (50 V versus 45 V), extending design margin.

Q: What are the key differences between the 2N5962 and 2N5232A PBFREE?

A: The primary differences are product status (obsolete versus active), regulatory compliance (RoHS3 for the 2N5232A PBFREE), and minor variations in DC current gain and saturation voltage characteristics. The 2N5232A PBFREE exhibits lower saturation voltage (125 mV versus 200 mV) and extended lower temperature operation (-65°C versus -55°C).

Q: Are there any package or pinout differences between these devices?

A: No. Both the 2N5962 and 2N5232A PBFREE use the TO-92-3 (TO-226AA) Through Hole package with identical pinout configuration. Physical substitution requires no modifications to circuit board layout or component mounting.

Q: What is the significance of the "PBFREE" designation on the 2N5232A?

A: The PBFREE designation indicates the device is manufactured without lead (Pb) in the solder connections, meeting RoHS3 environmental compliance requirements. This is standard for active production devices and does not affect electrical performance or compatibility.

Q: Is the 2N5232A PBFREE suitable for applications requiring the full -55°C to 150°C temperature range of the 2N5962?

A: Yes. The 2N5232A PBFREE operates across -65°C to 150°C, which encompasses and exceeds the 2N5962 specification of -55°C to 150°C. The extended lower temperature capability provides additional design margin.

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