2N5886G Equivalent & Substitute Parts

Part Overview

The 2N5886G is an NPN bipolar junction transistor manufactured by onsemi, rated for 80 V collector-emitter breakdown voltage and 25 A maximum collector current in a TO-204 (TO-3) through-hole package. This device is classified as obsolete, which necessitates identification of equivalent and substitute components for ongoing design requirements and production continuity. The 2N5886G delivers 200 W maximum power dissipation and operates across a temperature range of -65°C to 200°C.

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN	—
Voltage - Collector Emitter Breakdown (Max)	80	V
Current - Collector (Ic) (Max)	25	A
Power - Max	200	W
Frequency - Transition	4	MHz
Operating Temperature	-65 to 200	°C (TJ)
Package / Case	TO-204AA, TO-3	—
Mounting Type	Through Hole	—
Product Status	Obsolete	—

Substitute Part Grouping Explanation

Substitution of the 2N5886G is determined by electrical and mechanical compatibility across the following critical parameters:

Electrical Compatibility Criteria:

Transistor type must be NPN
Collector-emitter breakdown voltage must equal or exceed 80 V
Maximum collector current must equal or exceed 25 A
Maximum power dissipation must equal or exceed 200 W
Operating temperature range must encompass -65°C to 200°C

Mechanical Compatibility Criteria:

Package type must be TO-204 (TO-3) through-hole configuration
Pin configuration must be compatible with TO-204AA or TO-3 standard

Substitute parts are grouped based on whether they meet all electrical requirements while maintaining mechanical compatibility. Parts that exceed the 2N5886G specifications in current or voltage rating remain valid substitutes provided they operate within the same temperature range and package footprint.

Parameter Comparison

Parameter	2N5886G	MJ802G	2N5039	2N5303	2N5684
Manufacturer	onsemi	onsemi	Microchip Technology	Microchip Technology	Microchip Technology
Transistor Type	NPN	NPN	NPN	NPN	NPN
Voltage - Collector Emitter Breakdown (Max)	80 V	90 V	75 V	80 V	80 V
Current - Collector (Ic) (Max)	25 A	30 A	20 A	20 A	50 A
Power - Max	200 W	200 W	140 W	5 W	300 W
Frequency - Transition	4 MHz	2 MHz	—	—	—
Operating Temperature	-65 to 200°C	-65 to 200°C	-65 to 200°C	-65 to 200°C	-65 to 200°C
Package / Case	TO-204AA, TO-3	TO-204AA, TO-3	TO-204AA, TO-3	TO-204AA, TO-3	TO-204AA, TO-3
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole
Product Status	Obsolete	Active	Active	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	RoHS non-compliant	RoHS non-compliant	RoHS non-compliant

Engineering Selection Recommendations

MJ802G (onsemi) is the primary substitute for the 2N5886G. This part exceeds the original specifications with 30 A maximum collector current and 90 V breakdown voltage, while maintaining identical 200 W power dissipation and the same -65°C to 200°C operating temperature range. The MJ802G is ROHS3 compliant and carries active product status, ensuring long-term availability and supply chain stability.

2N5684 (Microchip Technology) serves as an alternative substitute with superior current handling capability (50 A maximum) and increased power dissipation (300 W). This part meets the 80 V voltage requirement and maintains full temperature range compatibility. However, 2N5684 is RoHS non-compliant, which may restrict use in applications subject to RoHS regulations.

2N5039 (Microchip Technology) is a partial substitute suitable only for applications where the 25 A collector current requirement can be reduced to 20 A. This part provides 140 W power dissipation, which falls below the 2N5886G specification of 200 W. The 2N5039 is RoHS non-compliant and carries active product status.

2N5303 (Microchip Technology) is not recommended as a substitute. Although it matches the 80 V breakdown voltage specification, the maximum power dissipation of 5 W is substantially below the 2N5886G requirement of 200 W, making it unsuitable for equivalent thermal performance.

Frequently Asked Questions (FAQ)

Q: Can the MJ802G directly replace the 2N5886G in existing designs?

A: Yes. The MJ802G maintains mechanical compatibility through identical TO-204 (TO-3) through-hole packaging and pin configuration. Electrical specifications exceed the 2N5886G across all critical parameters: 30 A versus 25 A collector current, 90 V versus 80 V breakdown voltage, and equivalent 200 W power dissipation. Both devices operate across -65°C to 200°C.

Q: What is the primary limitation of the 2N5303 as a substitute?

A: The 2N5303 maximum power dissipation of 5 W is incompatible with the 2N5886G specification of 200 W. This part is suitable only for low-power applications and cannot serve as a direct equivalent in designs requiring the full thermal capacity of the original component.

Q: Are there compliance differences between substitute options?

A: Yes. The MJ802G is ROHS3 compliant, matching the 2N5886G compliance status. The 2N5684, 2N5039, and 2N5303 are all RoHS non-compliant. Applications subject to RoHS regulations must use the MJ802G to maintain compliance.

Q: Does the 2N5684 offer advantages over the MJ802G?

A: The 2N5684 provides higher current capacity (50 A versus 30 A) and greater power dissipation (300 W versus 200 W). However, it is RoHS non-compliant, whereas the MJ802G maintains ROHS3 compliance. Selection depends on whether the additional current and power specifications are required and whether RoHS compliance is mandatory.

Q: Can the 2N5039 be used in applications requiring 25 A collector current?

A: No. The 2N5039 maximum collector current is 20 A, which is below the 2N5886G specification of 25 A. Additionally, the 2N5039 power dissipation of 140 W falls short of the 200 W requirement. This part is suitable only for reduced-current applications.

Q: Are all substitute parts available in the same through-hole package?

A: Yes. All substitute parts listed—MJ802G, 2N5039, 2N5303, and 2N5684—are packaged in TO-204 (TO-3) through-hole configuration with compatible pin assignments, ensuring mechanical interchangeability on existing printed circuit boards.

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