2N5830_D26Z Equivalent & Substitute Parts

Part Overview

The 2N5830_D26Z is an NPN bipolar junction transistor manufactured by onsemi, rated for 100 V collector-emitter breakdown voltage and 200 mA maximum collector current. This device is packaged in TO-92-3 (TO-226AA) through-hole configuration with a maximum power dissipation of 625 mW and operates across a temperature range of -55°C to 150°C. The 2N5830_D26Z is classified as obsolete product status. Equivalent and substitute parts are necessary to maintain design continuity and ensure component availability for new production runs and field replacements where the original part is no longer manufactured or stocked.

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN	—
Voltage - Collector Emitter Breakdown (Max)	100	V
Current - Collector (Ic) (Max)	200	mA
Power - Max	625	mW
Vce Saturation (Max) @ Ib, Ic	250mV @ 5mA, 50mA	—
Current - Collector Cutoff (Max)	50	nA
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 10mA, 5V	—
Operating Temperature	-55 to 150	°C
Mounting Type	Through Hole	—
Package / Case	TO-226-3, TO-92-3	—

Substitute Part Grouping Explanation

Substitute parts for the 2N5830_D26Z are selected based on strict electrical and mechanical compatibility criteria. All substitute devices must meet or exceed the following key parameters:

Transistor Type: NPN configuration
Voltage Rating: Collector-emitter breakdown voltage of 100 V or greater
Current Rating: Maximum collector current of 200 mA or greater
Power Dissipation: Maximum power rating of 625 mW or greater
Mounting Type: Through-hole configuration
Package Compatibility: E-Line (TO-92 compatible) or TO-92-3 package form factors
Operating Temperature Range: Minimum -55°C to 150°C or broader

The substitute parts listed below are manufactured by Diodes Incorporated and are classified as active products with RoHS3 compliance and REACH unaffected status. These devices are available in through-hole E-Line packages that are mechanically and electrically compatible with the original 2N5830_D26Z application requirements.

Parameter Comparison

Parameter	2N5830_D26Z	ZTX415STZ	ZTX453STZ	ZTX653STZ	ZTX694BSTZ	ZTX853STZ
Manufacturer	onsemi	Diodes Inc.	Diodes Inc.	Diodes Inc.	Diodes Inc.	Diodes Inc.
Product Status	Obsolete	Active	Active	Active	Active	Active
Transistor Type	NPN	NPN - Avalanche Mode	NPN	NPN	NPN	NPN
Voltage - Collector Emitter Breakdown (Max)	100 V	100 V	100 V	100 V	120 V	100 V
Current - Collector (Ic) (Max)	200 mA	500 mA	1 A	2 A	500 mA	4 A
Power - Max	625 mW	680 mW	1 W	1 W	1 W	1.2 W
Vce Saturation (Max) @ Ib, Ic	250mV @ 5mA, 50mA	500mV @ 1mA, 10mA	700mV @ 15mA, 150mA	500mV @ 200mA, 2A	500mV @ 5mA, 400mA	200mV @ 400mA, 4A
Current - Collector Cutoff (Max)	50 nA	100 nA	100 nA	100 nA	100 nA	50 nA
Operating Temperature	-55 to 150°C	-55 to 175°C	-55 to 200°C	-55 to 200°C	-55 to 200°C	-55 to 200°C
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-226-3, TO-92-3	E-Line-3	E-Line-3	E-Line-3	E-Line-3	E-Line-3
RoHS Status	—	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
REACH Status	REACH Unaffected	REACH Unaffected	REACH Unaffected	REACH Unaffected	REACH Unaffected	REACH Unaffected

Engineering Selection Recommendations

All listed substitute parts are manufactured by Diodes Incorporated and carry active product status, ensuring long-term availability and supply chain continuity. Each substitute device is RoHS3 compliant and REACH unaffected, meeting current environmental and regulatory requirements for electronic component manufacturing and distribution.

ZTX415STZ provides direct electrical compatibility with 100 V breakdown voltage and 500 mA collector current rating, exceeding the 2N5830_D26Z specifications. This device operates to 175°C and is suitable for applications requiring avalanche mode operation.

ZTX453STZ offers 100 V breakdown voltage with 1 A collector current capability and 1 W power dissipation. Operating temperature extends to 200°C, providing enhanced thermal margin for extended operating environments.

ZTX653STZ delivers 100 V breakdown voltage with 2 A collector current and 1 W power dissipation. This device supports the widest current range among the 100 V rated substitutes and operates to 200°C.

ZTX694BSTZ provides 120 V breakdown voltage with 500 mA collector current and 1 W power dissipation. The elevated voltage rating offers additional design margin for applications subject to voltage transients or overshoot conditions.

ZTX853STZ supplies 100 V breakdown voltage with 4 A collector current and 1.2 W power dissipation. This device offers the highest current handling capability and lowest saturation voltage (200 mV), making it suitable for high-current switching applications.

All substitute parts are packaged in E-Line-3 through-hole configuration, which is mechanically compatible with TO-92-3 footprints. Moisture sensitivity level is 1 (Unlimited) for all devices, matching the original part specification.

Frequently Asked Questions (FAQ)

Q: Can the ZTX415STZ directly replace the 2N5830_D26Z in all applications?

A: The ZTX415STZ meets the minimum electrical requirements of 100 V breakdown voltage and exceeds the 200 mA current specification with 500 mA capability. The E-Line-3 package is mechanically compatible with TO-92-3 footprints. However, the ZTX415STZ is specified as NPN - Avalanche Mode, which may introduce different switching characteristics in specific circuit topologies. Circuit validation is necessary for applications sensitive to avalanche behavior.

Q: What is the difference between the ZTX694BSTZ and other substitutes?

A: The ZTX694BSTZ is rated for 120 V collector-emitter breakdown voltage, compared to 100 V for most other substitutes. This higher voltage rating provides additional design margin for applications experiencing voltage transients. All other electrical parameters remain compatible with the 2N5830_D26Z requirements.

Q: Are all substitute parts RoHS compliant?

A: Yes, all listed substitute parts (ZTX415STZ, ZTX453STZ, ZTX653STZ, ZTX694BSTZ, and ZTX853STZ) are RoHS3 compliant and REACH unaffected, meeting current environmental regulations for electronic component manufacturing.

Q: Which substitute offers the best saturation voltage performance?

A: The ZTX853STZ provides the lowest saturation voltage at 200 mV (@ 400 mA, 4 A), matching the 2N5830_D26Z specification of 250 mV. This characteristic is beneficial for low-loss switching applications where minimizing on-state voltage drop is critical.

Q: Can I use a substitute with higher current rating if my circuit only requires 200 mA?

A: Yes. Substitute parts with higher current ratings (ZTX453STZ, ZTX653STZ, ZTX853STZ) are electrically compatible with applications requiring 200 mA or less. The higher current rating does not degrade performance in lower-current applications. Package footprint compatibility must be verified for the specific PCB layout.

Q: What is the operating temperature advantage of the substitute parts?

A: The 2N5830_D26Z operates from -55°C to 150°C. All substitute parts extend the upper operating temperature to 175°C or 200°C, providing enhanced thermal margin for applications in elevated ambient conditions or high-power dissipation environments.

Q: Are the E-Line packages mechanically interchangeable with TO-92-3?

A: E-Line-3 packages are mechanically compatible with TO-92-3 through-hole footprints. Both package types feature three formed leads suitable for through-hole PCB mounting. Physical dimensions and lead spacing are equivalent, allowing direct PCB footprint compatibility.

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