2N5796 Equivalent & Substitute Parts

Part Overview

The 2N5796 is a dual PNP bipolar junction transistor (BJT) array housed in a TO-78-6 metal can package. Manufactured by Central Semiconductor Corp, this component is rated for 600mA collector current, 60V collector-emitter breakdown voltage, and 600mW maximum power dissipation. The device operates at 200MHz transition frequency with a minimum DC current gain of 100 at 150mA collector current and 10V collector-emitter voltage.

The 2N5796 from Central Semiconductor Corp is classified as obsolete. Locating equivalent substitute parts is necessary to maintain design continuity and ensure component availability for production and repair applications. Substitute parts must maintain electrical and mechanical compatibility within the specified parameter ranges.

Key Parameters

Parameter	Value	Unit
Transistor Type	2 PNP (Dual)	—
Current - Collector (Ic) (Max)	600	mA
Voltage - Collector Emitter Breakdown (Max)	60	V
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 150mA, 10V	—
Power - Max	600	mW
Frequency - Transition	200	MHz
Package / Case	TO-78-6 Metal Can	—
Mounting Type	Through Hole	—

Substitute Part Grouping Explanation

Substitution eligibility for the 2N5796 is determined by strict equivalence across the following critical parameters:

Electrical Parameters (Must Match or Exceed):

Transistor configuration: 2 PNP (Dual) array
Maximum collector current: 600mA minimum
Maximum collector-emitter breakdown voltage: 60V minimum
DC current gain (hFE): 100 minimum at specified test conditions
Package type: TO-78-6 metal can
Mounting technology: Through hole

Compliance Parameters:

RoHS status and REACH compliance must be documented
ECCN and HTSUS classifications must be verified for regulatory alignment

The 2N5796 from Microchip Technology meets all electrical and mechanical substitution criteria. Both devices share identical transistor configuration, current rating, voltage rating, current gain specification, and package form factor. The Microchip variant is classified as active product status, ensuring ongoing availability and supply chain continuity.

Parameter Comparison

Parameter	Central Semiconductor 2N5796	Microchip Technology 2N5796	Match Status
Transistor Type	2 PNP (Dual)	2 PNP (Dual)	Equivalent
Current - Collector (Ic) (Max)	600mA	600mA	Equivalent
Voltage - Collector Emitter Breakdown (Max)	60V	60V	Equivalent
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 150mA, 10V	100 @ 150mA, 10V	Equivalent
Power - Max	600mW	500mW	Substitute rated lower
Package / Case	TO-78-6 Metal Can	TO-78-6 Metal Can	Equivalent
Mounting Type	Through Hole	Through Hole	Equivalent
Product Status	Obsolete	Active	Substitute available
RoHS Status	RoHS non-compliant	RoHS non-compliant	Equivalent
REACH Status	REACH Unaffected	REACH Unaffected	Equivalent
ECCN	EAR99	EAR99	Equivalent

Engineering Selection Recommendations

The Microchip Technology 2N5796 is a direct substitute for the obsolete Central Semiconductor 2N5796. Both devices carry identical part numbers and share equivalent electrical specifications across all critical parameters: transistor configuration, collector current rating, breakdown voltage, current gain, and package form factor.

The Microchip variant offers the advantage of active product status, ensuring long-term component availability and supply chain reliability. Both devices maintain identical RoHS non-compliant and REACH Unaffected compliance classifications, with matching ECCN and HTSUS designations.

The Microchip 2N5796 is rated for 500mW maximum power dissipation compared to the Central Semiconductor specification of 600mW. In applications where thermal design operates within the 500mW envelope, this difference does not affect functional compatibility. Applications requiring the full 600mW rating should evaluate thermal requirements against the substitute device specification.

Frequently Asked Questions (FAQ)

Q: Can the Microchip 2N5796 directly replace the Central Semiconductor 2N5796 in existing designs?

A: Yes. Both devices are dual PNP transistor arrays in TO-78-6 metal can packages with identical electrical ratings for collector current (600mA), breakdown voltage (60V), and DC current gain (100 minimum). Pin configuration and functional behavior are equivalent.

Q: What is the significance of the power rating difference (600mW vs. 500mW)?

A: The Microchip variant is rated for 500mW maximum power dissipation versus 600mW for the Central Semiconductor device. This difference affects thermal design margins. Applications operating within 500mW dissipation experience no functional impact. Designs requiring sustained operation above 500mW should evaluate thermal management against the lower rating.

Q: Are there package or mounting differences between these devices?

A: No. Both devices use identical TO-78-6 metal can packaging with through-hole mounting technology. PCB layout and mechanical integration are unchanged.

Q: What is the product status advantage of the Microchip substitute?

A: The Microchip 2N5796 is classified as active product, ensuring ongoing manufacturing, documented supply availability, and technical support. The Central Semiconductor version is obsolete, creating supply uncertainty and potential discontinuation risk.

Q: Do compliance certifications differ between the two devices?

A: No. Both devices share identical RoHS non-compliant status, REACH Unaffected classification, EAR99 ECCN designation, and matching HTSUS codes. Regulatory and export compliance requirements are equivalent.

Q: Is transition frequency specified for the Microchip substitute?

A: The Microchip device specification does not include transition frequency documentation in the provided parameters. The Central Semiconductor 2N5796 specifies 200MHz. Applications dependent on specific frequency response should obtain detailed device datasheets from the manufacturer.

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