2N5770_D75Z Equivalent & Substitute Parts

Part Overview

The 2N5770_D75Z is an RF transistor NPN manufactured by onsemi, designed for through-hole applications in RF circuits. This device operates at 15V maximum collector-emitter breakdown voltage with a maximum power dissipation of 350mW and collector current rating of 50mA. The product is classified as obsolete, making equivalent and substitute parts necessary for new designs and ongoing production support. The 2N5770 series is characterized by low-noise RF performance at 60MHz with a noise figure of 6dB and a gain of 15dB, suitable for RF amplification and signal processing applications.

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN	—
Voltage - Collector Emitter Breakdown (Max)	15	V
Noise Figure (Typ @ f)	6	dB @ 60MHz
Gain	15	dB
Power - Max	350	mW
DC Current Gain (hFE) (Min) @ Ic, Vce	50	@ 8mA, 10V
Current - Collector (Ic) (Max)	50	mA
Operating Temperature	-55 to 150	°C (TJ)
Mounting Type	Through Hole	—
Package / Case	TO-92-3	—
Product Status	Obsolete	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the 2N5770_D75Z is determined by compatibility across the following critical parameters: transistor type (NPN), maximum collector-emitter breakdown voltage, maximum power dissipation, maximum collector current, DC current gain characteristics, and operating temperature range. The 2N5770_D75Z operates as a through-hole TO-92-3 package device, which limits direct mechanical substitution to parts with equivalent or superior electrical ratings and compatible mounting configurations.

The substitute parts listed below are grouped based on their ability to meet or exceed the electrical specifications of the 2N5770_D75Z:

Group 1 - Surface Mount RF Transistors (Higher Frequency Capability): BFP450H6433XTMA1 and BFP650H6327XTSA1 are surface-mount alternatives offering enhanced frequency performance and higher current ratings, suitable for applications requiring higher operating frequencies and improved thermal management.

Group 2 - Compact Surface Mount RF Transistor (Lower Voltage Rating): BFR843EL3E6327XTSA1 is a surface-mount device with reduced voltage rating but higher gain characteristics, applicable to lower-voltage RF circuits.

Group 3 - High-Power Chassis Mount RF Transistor: MRF317 is a chassis-mount device with significantly higher voltage, current, and power ratings, suitable for high-power RF applications requiring robust mechanical mounting.

Parameter Comparison

Parameter	2N5770_D75Z	BFP450H6433XTMA1	BFP650H6327XTSA1	BFR843EL3E6327XTSA1	MRF317
Manufacturer	onsemi	Infineon Technologies	Infineon Technologies	Infineon Technologies	MACOM Technology Solutions
Transistor Type	NPN	NPN	NPN	NPN	NPN
Voltage - Collector Emitter Breakdown (Max)	15V	5V	4.5V	2.6V	35V
Noise Figure (Typ @ f)	6dB @ 60MHz	1.25dB @ 1.8GHz	0.8–1.9dB @ 1.8–6GHz	—	—
Gain	15dB	15.5dB	10.5–21.5dB	25.5dB	10dB
Power - Max	350mW	450mW	500mW	125mW	100W
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 8mA, 10V	60 @ 50mA, 4V	110 @ 80mA, 3V	—	10 @ 5A, 5V
Current - Collector (Ic) (Max)	50mA	100mA	150mA	55mA	12A
Operating Temperature	-55 to 150°C (TJ)	150°C (TJ)	150°C (TJ)	150°C (TJ)	—
Mounting Type	Through Hole	Surface Mount	Surface Mount	Surface Mount	Chassis Mount
Package / Case	TO-92-3	SOT-343	SOT-343	3-XFDFN	316-01
Product Status	Obsolete	Active	Active	Active	Active
RoHS Status	—	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)
REACH Status	REACH Unaffected	REACH Unaffected	REACH Unaffected	REACH Unaffected	—

Engineering Selection Recommendations

For Direct Through-Hole Replacement: No direct through-hole substitute exists among the listed parts. All substitute options employ surface-mount or chassis-mount configurations, requiring circuit board redesign or adapter solutions.

For Surface-Mount Redesign (Low-Voltage Applications): BFP450H6433XTMA1 and BFP650H6327XTSA1 are active, ROHS3-compliant alternatives suitable for applications operating below 5V. BFP650H6327XTSA1 offers superior frequency performance (37GHz) and higher current capability (150mA) compared to the 2N5770_D75Z, making it suitable for modern RF applications requiring enhanced performance. Both devices maintain MSL 1 rating and REACH compliance.

For Compact, Low-Power Applications: BFR843EL3E6327XTSA1 is an active surface-mount device with the highest gain (25.5dB) among substitutes but operates at reduced voltage (2.6V maximum). This device is suitable only for low-voltage RF circuits and provides the smallest package footprint (3-XFDFN).

For High-Power Applications: MRF317 is an active, ROHS3-compliant chassis-mount device with significantly higher voltage (35V), current (12A), and power (100W) ratings. This device is suitable for high-power RF amplification applications requiring robust mechanical mounting and is not a direct electrical substitute for low-power circuits.

Compliance Considerations: All active substitute parts maintain MSL 1 (Unlimited) moisture sensitivity rating and REACH compliance status, ensuring compatibility with standard manufacturing and storage environments. The 2N5770_D75Z is classified as obsolete; all substitute parts are active products with ongoing manufacturer support.

Frequently Asked Questions (FAQ)

Q: Can BFP450H6433XTMA1 or BFP650H6327XTSA1 directly replace the 2N5770_D75Z in existing through-hole designs?

A: No. Both BFP450H6433XTMA1 and BFP650H6327XTSA1 are surface-mount devices in SOT-343 packages, while the 2N5770_D75Z uses a through-hole TO-92-3 package. Circuit board redesign is required for substitution.

Q: What are the voltage limitations when substituting with BFP450H6433XTMA1 or BFP650H6327XTSA1?

A: BFP450H6433XTMA1 has a maximum collector-emitter breakdown voltage of 5V, and BFP650H6327XTSA1 is rated at 4.5V. The 2N5770_D75Z operates at 15V maximum. These substitutes are suitable only for applications operating at or below their respective voltage ratings.

Q: Is BFR843EL3E6327XTSA1 suitable for all 2N5770_D75Z applications?

A: No. BFR843EL3E6327XTSA1 has a maximum collector-emitter breakdown voltage of 2.6V, making it unsuitable for applications requiring the 15V rating of the 2N5770_D75Z. This device is limited to low-voltage RF circuits.

Q: What is the primary advantage of MRF317 as a substitute?

A: MRF317 is designed for high-power RF applications, offering 35V maximum voltage, 12A maximum collector current, and 100W maximum power dissipation. It is not a direct substitute for the 2N5770_D75Z in low-power circuits but serves applications requiring significantly higher power handling.

Q: Are all substitute parts compliant with current environmental regulations?

A: All active substitute parts (BFP450H6433XTMA1, BFP650H6327XTSA1, BFR843EL3E6327XTSA1, and MRF317) are ROHS3 compliant and maintain REACH compliance status. The 2N5770_D75Z is classified as obsolete and is REACH Unaffected.

Q: What is the frequency performance difference between the 2N5770_D75Z and substitute parts?

A: The 2N5770_D75Z operates at 60MHz with a noise figure of 6dB. BFP450H6433XTMA1 operates at 24GHz with 1.25dB noise figure at 1.8GHz. BFP650H6327XTSA1 operates at 37GHz with 0.8–1.9dB noise figure across 1.8–6GHz. These substitutes are suitable for higher-frequency applications requiring improved noise performance.

Q: Can the 2N5770_D75Z be used in new designs?

A: The 2N5770_D75Z is classified as obsolete. New designs should utilize active substitute parts such as BFP450H6433XTMA1, BFP650H6327XTSA1, or MRF317, depending on application requirements for voltage, current, power, and frequency performance.

Q: What moisture sensitivity level applies to all listed parts?

A: All parts, including the 2N5770_D75Z and all substitute options, maintain MSL 1 (Unlimited) rating, indicating no moisture sensitivity restrictions for storage and handling.

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