2N5770_D74Z Equivalent & Substitute Parts

Part Overview

The 2N5770_D74Z is an RF transistor NPN rated for 15V collector-emitter breakdown voltage with 50mA maximum collector current and 350mW power dissipation in a through-hole TO-92-3 package. This device is classified as obsolete, making equivalent and substitute parts necessary for new designs and production continuity. The 2N5770 series operates across a temperature range of -55°C to 150°C and delivers 15dB gain with 6dB noise figure at 60MHz, suitable for RF applications requiring through-hole mounting.

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN	—
Voltage - Collector Emitter Breakdown (Max)	15V	V
Current - Collector (Ic) (Max)	50mA	mA
Power - Max	350mW	mW
Noise Figure (Typ @ f)	6dB @ 60MHz	dB
Gain	15dB	dB
DC Current Gain (hFE) (Min)	50 @ 8mA, 10V	—
Operating Temperature	-55°C ~ 150°C	°C
Mounting Type	Through Hole	—
Package / Case	TO-92-3	—
Product Status	Obsolete	—

Substitute Part Grouping Explanation

Substitution of the 2N5770_D74Z is determined by the following electrical and mechanical parameters: NPN transistor type, voltage rating capability, collector current capacity, power dissipation rating, and operating temperature range. The substitute parts listed are Infineon Technologies RF transistors that maintain NPN configuration and operate within the -55°C to 150°C temperature envelope or higher.

The four substitute parts are grouped based on their ability to handle the electrical specifications of the original device:

Electrical Substitution Criteria:

Transistor Type: NPN (required match)
Voltage - Collector Emitter Breakdown (Max): Must equal or exceed 15V
Current - Collector (Ic) (Max): Must equal or exceed 50mA
Power - Max: Must equal or exceed 350mW
Operating Temperature: Must support 150°C maximum junction temperature

Mechanical Substitution Criteria:

Mounting Type: Surface Mount alternatives acceptable for redesign scenarios
Package compatibility: Determined by application circuit board layout

Parameter Comparison

Parameter	2N5770_D74Z	BFR193L3E6327XTMA1	BFR840L3RHESDE6327XTSA1	BFR460L3E6327XTMA1	BFP405H6740XTSA1
Transistor Type	NPN	NPN	NPN	NPN	NPN
Voltage - Collector Emitter Breakdown (Max)	15V	12V	2.6V	5.8V	5V
Current - Collector (Ic) (Max)	50mA	80mA	35mA	50mA	25mA
Power - Max	350mW	580mW	75mW	200mW	75mW
Noise Figure (Typ @ f)	6dB @ 60MHz	1dB ~ 1.6dB @ 900MHz ~ 1.8GHz	0.5dB @ 450MHz	1.1dB ~ 1.35dB @ 1.8GHz ~ 3GHz	1.25dB @ 1.8GHz
Gain	15dB	12.5dB ~ 19dB	27dB	16dB	23dB
DC Current Gain (hFE) (Min)	50 @ 8mA, 10V	70 @ 30mA, 8V	150 @ 10mA, 1.8V	90 @ 20mA, 3V	60 @ 5mA, 4V
Operating Temperature (Max)	150°C	150°C	150°C	150°C	150°C
Mounting Type	Through Hole	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Product Status	Obsolete	Active	Active	Active	Active
RoHS Status	—	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

BFR193L3E6327XTMA1 is suitable for applications requiring voltage ratings near the original specification. This device provides 12V breakdown voltage, 80mA collector current capacity, and 580mW power dissipation, exceeding the 2N5770_D74Z power requirements. The BFR193 operates at 8GHz transition frequency with improved noise performance (1dB ~ 1.6dB) compared to the original 6dB at 60MHz. Product status is active with ROHS3 compliance. Surface mount packaging requires circuit board redesign.

BFR460L3E6327XTMA1 provides 5.8V breakdown voltage with 50mA collector current matching the original specification and 200mW power dissipation. This device operates at 22GHz transition frequency with 1.1dB ~ 1.35dB noise figure at 1.8GHz ~ 3GHz. The BFR460 is active product status with ROHS3 compliance. Voltage rating is lower than the original 15V specification; application circuit must operate within 5.8V maximum.

BFR840L3RHESDE6327XTSA1 operates at 75GHz transition frequency with 0.5dB noise figure at 450MHz, representing the highest frequency capability among substitutes. Collector current maximum is 35mA and power dissipation is 75mW, both below original specifications. Voltage rating is 2.6V, requiring application redesign for lower voltage operation. Product status is active with ROHS3 compliance.

BFP405H6740XTSA1 provides 5V breakdown voltage with 25mA collector current and 75mW power dissipation. This device operates at 25GHz transition frequency with 1.25dB noise figure at 1.8GHz. Collector current and power ratings are below the original 2N5770_D74Z specifications. Product status is active with ROHS3 compliance.

All substitute parts are manufactured by Infineon Technologies with active product status, ensuring long-term availability. All substitutes employ surface mount packaging, requiring circuit board layout modification from the original through-hole TO-92-3 configuration.

Frequently Asked Questions (FAQ)

Q: Can the BFR193L3E6327XTMA1 directly replace the 2N5770_D74Z in existing through-hole circuit boards?

A: No. The BFR193L3E6327XTMA1 uses surface mount PG-TSLP-3-1 packaging, while the 2N5770_D74Z uses through-hole TO-92-3 packaging. Circuit board redesign is required. An adapter or rework of the PCB layout is necessary for physical installation.

Q: Which substitute part maintains the closest voltage rating to the original 2N5770_D74Z?

A: The BFR193L3E6327XTMA1 provides 12V breakdown voltage, the closest match to the original 15V rating. However, this is still 3V lower than the original specification. Applications operating at voltages above 12V require alternative solutions or voltage regulation modifications.

Q: Are all substitute parts RoHS compliant?

A: Yes. All four substitute parts (BFR193L3E6327XTMA1, BFR840L3RHESDE6327XTSA1, BFR460L3E6327XTMA1, and BFP405H6740XTSA1) are ROHS3 compliant. The original 2N5770_D74Z RoHS status is not specified in the provided data.

Q: What is the primary limitation when substituting the 2N5770_D74Z with these Infineon parts?

A: All substitute parts employ surface mount technology, whereas the original uses through-hole TO-92-3 packaging. Additionally, all substitutes have lower voltage ratings than the original 15V specification. The BFR193L3E6327XTMA1 at 12V is the highest voltage option available among the listed substitutes.

Q: Can the BFR460L3E6327XTMA1 handle the full 50mA collector current of the original device?

A: Yes. The BFR460L3E6327XTMA1 is rated for 50mA maximum collector current, matching the original 2N5770_D74Z specification. However, its 5.8V voltage rating is significantly lower than the original 15V, limiting application scope.

Q: Which substitute provides the best noise performance?

A: The BFR840L3RHESDE6327XTSA1 provides 0.5dB noise figure at 450MHz, the lowest noise specification among all substitutes. However, this device has the lowest voltage rating (2.6V) and collector current capacity (35mA), restricting its use to low-voltage, low-current RF applications.

Q: Are these substitute parts available in through-hole packaging?

A: No. All four substitute parts are available only in surface mount configurations: BFR193L3E6327XTMA1 and BFR460L3E6327XTMA1 use PG-TSLP-3-1 packaging, BFR840L3RHESDE6327XTSA1 uses PG-TSLP-3 packaging, and BFP405H6740XTSA1 uses PG-SOT343-3D packaging. Through-hole alternatives are not listed in the provided substitute data.

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