2N5742 Equivalent & Substitute Parts Reference

Part Overview

The 2N5742 is a PNP power bipolar junction transistor (BJT) with a maximum collector current of 20 A, collector-emitter breakdown voltage of 100 V, and power dissipation up to 113 W, provided in a TO-204AD (TO-3) through-hole package. This component is classified as active in the "Transistors, Bipolar (BJT)" category. Finding alternative models is necessary to ensure supply chain resilience and design flexibility, particularly when inventory for the 2N5742 is constrained or specific packaging and compliance requirements must be met.

Substiute Parts

2N5742
Microchip TechnologyIn Stock: 9562N5742 Datasheet
2N5742
Current Part
MJ15004G
onsemiIn Stock: 1668MJ15004G Datasheet
MJ15004G
Similar

Key Parameters

Parameter 2N5742
Manufacturer Microchip Technology
Category Transistors, Bipolar (BJT)
Transistor Type PNP
Current - Collector (Ic) (Max) 20 A
Voltage - Collector Emitter Breakdown (Max) 100 V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 1mA, 10mA
Power - Max 113 W
Operating Temperature -65°C ~ 200°C (TJ)
Mounting Type Through Hole
Package / Case TO-204AA, TO-3
Supplier Device Package TO-204AD (TO-3)

Substitute Part Grouping Explanation

Substitution is based strictly on matching transistor category, polarity (PNP), maximum collector current, collector-emitter breakdown voltage, power dissipation, operating temperature range, and package compatibility. Mechanical compliance is ensured via the TO-204/TO-3 package. Substitute grouping is determined only by these parameters as provided.

Key parameters used for acceptance of substitutes:

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 20 A
  • Voltage - Collector Emitter Breakdown (Max): ≥100 V
  • Power - Max: ≥113 W
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Package / Case: TO-204AA, TO-3

Parameter Comparison

Parameter 2N5742 MJ15004G
Manufacturer Microchip Technology onsemi
Category Transistors, Bipolar (BJT) Transistors, Bipolar (BJT)
Transistor Type PNP PNP
Current - Collector (Ic) (Max) 20 A 20 A
Voltage - Collector Emitter Breakdown (Max) 100 V 140 V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 1mA, 10mA 1V @ 500mA, 5A
Power - Max 113 W 250 W
Operating Temperature -65°C ~ 200°C (TJ) -65°C ~ 200°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-204AA, TO-3 TO-204AA, TO-3
Supplier Device Package TO-204AD (TO-3) TO-204 (TO-3)

Engineering Selection Recommendations

Both the 2N5742 and MJ15004G have an active product status and are classified under ECCN EAR99. The MJ15004G is ROHS3 compliant and REACH unaffected, meeting relevant compliance and certification criteria for use as a substitute. Package compatibility is upheld via TO-204AA, TO-3 mechanical outlines. Inventory levels and compliance status support direct selection where supply or certification requirements dictate.

Frequently Asked Questions (FAQ)

Q1: What are the key criteria for substituting the 2N5742 with the MJ15004G?
A1: Key criteria include matching transistor category (BJT), PNP polarity, maximum collector current of 20 A, collector-emitter breakdown voltage of at least 100 V, power dissipation rating, compatible operating temperature, and TO-204AA (TO-3) package form factor.

Q2: Are there any package or mounting considerations with these substitutes?
A2: Both components use the TO-204AA, TO-3 case, ensuring mechanical compatibility for through-hole mounting applications.

Q3: Is there any difference in product compliance or certification?
A3: The MJ15004G specifies ROHS3 and REACH unaffected status, in alignment with standard compliance requirements.

Q4: Are electrical parameter differences relevant in this substitution context?
A4: Substitution is based only on explicit parameters specified. All primary electrical ratings are equal to or exceed those of the main part.

Q5: Is the inventory status consistent between main and substitute parts?
A5: Both 2N5742 and MJ15004G have listed inventory with active status.

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