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2N5684 Equivalent & Substitute Parts
Part Overview
The 2N5684 is a PNP bipolar junction transistor (BJT) rated for 80 V collector-emitter breakdown voltage and 50 A maximum collector current. Housed in a TO-204 (TO-3) through-hole package, this device is designed for high-current switching and amplification applications with a maximum power dissipation of 300 mW and transition frequency of 2 MHz.
The 2N5684 is classified as obsolete. Locating active production alternatives is necessary to ensure supply chain continuity and access to components with current manufacturing support and compliance certifications.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Transistor Type | PNP | — |
| Current - Collector (Ic) (Max) | 50 | A |
| Voltage - Collector Emitter Breakdown (Max) | 80 | V |
| Vce Saturation (Max) @ Ib, Ic | 5 V @ 10 A, 50 A | — |
| Current - Collector Cutoff (Max) | 1 | mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 25 A, 2 V | — |
| Power - Max | 300 | mW |
| Frequency - Transition | 2 | MHz |
| Operating Temperature Range | −65 to 200 | °C (TJ) |
| Mounting Type | Through Hole | — |
| Package / Case | TO-204AE | — |
Substitute Part Grouping Explanation
Substitution of the 2N5684 is determined by electrical and mechanical parameter equivalence. The substitute part must satisfy all of the following criteria:
- Transistor Type: PNP configuration
- Maximum Collector Current (Ic): 50 A or greater
- Collector-Emitter Breakdown Voltage (Vce(br)ceo): 80 V or greater
- Saturation Voltage (Vce(sat)): 5 V @ 10 A, 50 A or lower
- Collector Cutoff Current (Icbo): 1 mA or lower
- DC Current Gain (hFE): 15 or greater @ 25 A, 2 V
- Maximum Power Dissipation: 300 mW or greater
- Transition Frequency (fT): 2 MHz or greater
- Operating Temperature Range: −65°C to 200°C or wider
- Package Type: TO-204AE (TO-3) through-hole configuration
The 2N5684G meets all electrical and mechanical requirements for direct substitution and is classified as an active product with current manufacturing support.
Parameter Comparison
| Parameter | 2N5684 (Main Part) | 2N5684G (Substitute) | Match |
|---|---|---|---|
| Transistor Type | PNP | PNP | ✓ |
| Current - Collector (Ic) (Max) | 50 A | 50 A | ✓ |
| Voltage - Collector Emitter Breakdown (Max) | 80 V | 80 V | ✓ |
| Vce Saturation (Max) @ Ib, Ic | 5 V @ 10 A, 50 A | 5 V @ 10 A, 50 A | ✓ |
| Current - Collector Cutoff (Max) | 1 mA | 1 mA | ✓ |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 25 A, 2 V | 15 @ 25 A, 2 V | ✓ |
| Power - Max | 300 mW | 300 W | ✓ |
| Frequency - Transition | 2 MHz | 2 MHz | ✓ |
| Operating Temperature Range | −65 to 200 °C (TJ) | −65 to 200 °C (TJ) | ✓ |
| Mounting Type | Through Hole | Through Hole | ✓ |
| Package / Case | TO-204AE | TO-204AE | ✓ |
| Product Status | Obsolete | Active | ✓ |
| RoHS Status | Non-compliant | ROHS3 Compliant | ✓ |
| REACH Status | Unaffected | Unaffected | ✓ |
Engineering Selection Recommendations
The 2N5684G is the direct substitute for the 2N5684. Both devices are manufactured by onsemi and share identical electrical specifications and package configuration.
Product Status Advantage: The 2N5684G is classified as active, ensuring ongoing manufacturing support, availability, and supply chain reliability. The 2N5684 is obsolete and subject to discontinuation.
Compliance Advantage: The 2N5684G is ROHS3 compliant, meeting current environmental and regulatory requirements for electronic components. The 2N5684 is non-compliant with RoHS directives.
Functional Equivalence: All critical electrical parameters—collector current, breakdown voltage, saturation voltage, current gain, power dissipation, and frequency response—are identical between the two devices. The TO-204AE package ensures mechanical and thermal compatibility in existing circuit designs.
Selection of the 2N5684G eliminates obsolescence risk and ensures compliance with modern procurement and environmental standards while maintaining full electrical and mechanical compatibility.
Frequently Asked Questions (FAQ)
Q: Can the 2N5684G be used as a direct replacement for the 2N5684 in existing designs?
A: Yes. The 2N5684G is electrically and mechanically equivalent to the 2N5684. All critical parameters—collector current rating, breakdown voltage, saturation characteristics, current gain, power dissipation, and operating temperature range—are identical. The TO-204AE package is the same, ensuring pin compatibility and thermal performance.
Q: What is the primary reason to transition from the 2N5684 to the 2N5684G?
A: The 2N5684 is obsolete and no longer in active production. The 2N5684G is an active product with current manufacturing support. Additionally, the 2N5684G is ROHS3 compliant, meeting current environmental regulations, whereas the 2N5684 is non-compliant.
Q: Are there any electrical performance differences between the 2N5684 and 2N5684G?
A: No. Both devices have identical electrical specifications: 50 A maximum collector current, 80 V breakdown voltage, 5 V saturation voltage at rated conditions, 15 minimum DC current gain, 300 mW power dissipation, and 2 MHz transition frequency.
Q: Does the packaging differ between these two parts?
A: No. Both the 2N5684 and 2N5684G use the TO-204AE (TO-3) through-hole package. The only packaging difference is that the 2N5684G is supplied in trays, whereas the 2N5684 packaging type is not specified. This does not affect circuit board integration or thermal performance.
Q: What is the operating temperature range for the 2N5684G?
A: The 2N5684G operates from −65°C to 200°C junction temperature (TJ), identical to the 2N5684. This range supports both industrial and high-temperature applications.
Q: Is the 2N5684G suitable for high-current switching applications?
A: Yes. The 2N5684G is rated for 50 A maximum collector current and has a saturation voltage of 5 V at 50 A, making it suitable for high-current switching and power amplification circuits within the specified voltage and current limits.
Q: What compliance certifications does the 2N5684G hold?
A: The 2N5684G is ROHS3 compliant and REACH unaffected. These certifications confirm compliance with current environmental and hazardous substance regulations applicable to electronic components.
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