2N5671 Equivalent & Substitute Parts Reference

Part Overview

The 2N5671 is a Bipolar (BJT) NPN transistor manufactured by Microchip Technology. It features a maximum collector current of 30 A and a collector-emitter breakdown voltage of 90 V, housed in a TO-204AA, TO-3 through-hole package. This part is currently active, and finding substitute models is necessary for applications requiring electrical equivalence, package compatibility, and compliance with RoHS or REACH environmental standards.

Key Parameters

Parameter	2N5671 Value	Description
Transistor Type	NPN	Device polarity/type
Current - Collector (Ic) (Max)	30 A	Maximum collector current
Voltage - Collector Emitter Breakdown (Max)	90 V	Maximum collector-emitter voltage
Vce Saturation (Max) @ Ib, Ic	5V @ 6A, 30A	Maximum saturation voltage
Current - Collector Cutoff (Max)	10mA	Maximum cutoff current
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 20A, 5V	Minimum current gain
Power - Max	6 W	Maximum power dissipation
Operating Temperature	-65°C ~ 200°C (TJ)	Junction temperature rating
Mounting Type	Through Hole	Physical installation type
Package / Case	TO-204AA, TO-3	Device package outline
RoHS Status	RoHS non-compliant	Environmental compliance status
REACH Status	REACH Unaffected	Environmental regulation status
Product Status	Active	Manufacturer lifecycle state

Substitute Part Grouping Explanation

Substitute parts for the 2N5671 are grouped strictly by matching the following mandatory parameters: transistor type (NPN), maximum collector current (30 A), collector-emitter breakdown voltage (90 V), package/case (TO-204AA, TO-3), mounting type (Through Hole), and operating temperature (-65°C ~ 200°C (TJ)). Additionally, compliance information such as RoHS and REACH status must be considered if environmental regulations are required in the application.

Parameter Comparison

Parameter	2N5671 (Microchip Technology)	MJ802G (onsemi)
Transistor Type	NPN	NPN
Current - Collector (Ic) (Max)	30 A	30 A
Voltage - Collector Emitter Breakdown (Max)	90 V	90 V
Mounting Type	Through Hole	Through Hole
Package / Case	TO-204AA, TO-3	TO-204AA, TO-3
Operating Temperature	-65°C ~ 200°C (TJ)	-65°C ~ 200°C (TJ)
RoHS Status	RoHS non-compliant	ROHS3 Compliant
REACH Status	REACH Unaffected	REACH Unaffected
Product Status	Active	Active

Engineering Selection Recommendations

Selection between 2N5671 and MJ802G must be based on product status (both are active) and compliance requirements. The 2N5671 is RoHS non-compliant while MJ802G is ROHS3 compliant. Both parts have identical transistor type, voltage, current, package, mounting, and temperature ratings as provided. REACH status for both is "Unaffected."

Frequently Asked Questions (FAQ)

Q1. What are the most critical parameters when evaluating a substitute for the 2N5671?
A1. Transistor type, collector current, collector-emitter voltage, package/case, mounting type, and operating temperature. Compliance data may also be critical depending on environmental requirements.

Q2. Is package interchangeability assured between 2N5671 and MJ802G?
A2. Both components utilize the TO-204AA, TO-3 through-hole package and are mechanically compatible per the provided data.

Q3. How does RoHS compliance influence substitute selection?
A3. Applications requiring RoHS compliance should select MJ802G, as 2N5671 is RoHS non-compliant.

Q4. Are there differences in product status or regulatory status between these transistors?
A4. Both parts are active and have REACH status listed as Unaffected.

Q5. Which parameter groupings must always be matched for direct substitution in this transistor category?
A5. Electrical ratings (max collector current, breakdown voltage), mounting type, package/case, and compliance statuses must be matched exactly based on the provided specification.

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