2N5657G Equivalent & Substitute Parts

Part Overview

The 2N5657G is an NPN bipolar junction transistor manufactured by onsemi, designed for general-purpose switching and amplification applications. This device features a maximum collector-emitter breakdown voltage of 350 V, collector current rating of 500 mA, and maximum power dissipation of 20 W in a Through Hole TO-126 package. The 2N5657G is classified as obsolete, making identification of functionally equivalent substitute components necessary for ongoing design support, maintenance, and production continuity.

Substiute Parts

2N5657G

onsemiIn Stock: 8922N5657G Datasheet

Current PartRFQ

MJD340G

onsemiIn Stock: 2013MJD340G Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the 2N5657G is determined by electrical and mechanical compatibility across the following critical parameters:

Electrical Compatibility Criteria:

• Transistor polarity (NPN type required)
• Collector current rating (minimum 500 mA)
• Collector-emitter breakdown voltage (minimum 350 V)
• DC current gain (hFE minimum 30)
• Transition frequency (10 MHz minimum)
• Operating temperature range (-65°C to 150°C)

Mechanical Compatibility Criteria:

• Package type and pin configuration
• Mounting method (Through Hole or Surface Mount)
• Power dissipation capability (minimum 20 W)

The MJD340G is identified as a substitute part. While this device operates at a reduced maximum collector-emitter breakdown voltage of 300 V and lower maximum power dissipation of 15 W, it maintains electrical equivalence in collector current, DC current gain, transition frequency, and operating temperature range. The primary distinction is the transition from Through Hole TO-126 packaging to Surface Mount DPAK packaging, which represents a mechanical substitution requiring circuit board redesign.

Parameter Comparison

Engineering Selection Recommendations

2N5657G (Original Part): The 2N5657G is classified as obsolete. Current inventory availability is limited to 836 pieces. This part is suitable for applications requiring the full 350 V collector-emitter breakdown voltage rating and 20 W power dissipation in Through Hole TO-126 packaging. The device is ROHS3 compliant and carries unlimited moisture sensitivity classification.

MJD340G (Substitute Part): The MJD340G is an active product with 2000 pieces in current inventory. This substitute is appropriate for applications where the reduced 300 V collector-emitter breakdown voltage and 15 W power dissipation are acceptable. The transition to Surface Mount DPAK packaging requires circuit board redesign. The MJD340G maintains ROHS3 compliance and unlimited moisture sensitivity classification, ensuring regulatory equivalence.

Selection between these parts depends on voltage and power requirements specific to the application circuit. Applications operating below 300 V with power dissipation not exceeding 15 W can transition to the MJD340G. Applications requiring the full 350 V rating or 20 W dissipation must retain the 2N5657G or identify alternative through-hole NPN transistors meeting these specifications.

Frequently Asked Questions (FAQ)

Q: Can the MJD340G directly replace the 2N5657G in an existing circuit board?

A: Direct replacement is not possible due to package differences. The 2N5657G uses Through Hole TO-126 packaging, while the MJD340G uses Surface Mount DPAK packaging. Circuit board redesign is required to accommodate the different pin configuration and mounting method.

Q: What are the voltage limitations when substituting with the MJD340G?

A: The MJD340G has a maximum collector-emitter breakdown voltage of 300 V, compared to 350 V for the 2N5657G. Applications operating at voltages exceeding 300 V require the original 2N5657G or an alternative part rated for higher voltages.

Q: Are there power dissipation differences between these parts?

A: Yes. The 2N5657G is rated for 20 W maximum power dissipation, while the MJD340G is rated for 15 W. Applications requiring power dissipation above 15 W must use the 2N5657G or identify alternative components with higher power ratings.

Q: Do both parts meet the same regulatory compliance standards?

A: Yes. Both the 2N5657G and MJD340G are ROHS3 compliant, REACH unaffected, and classified as EAR99 under export control regulations. Both carry unlimited moisture sensitivity classification (MSL 1).

Q: What is the collector current rating for both parts?

A: Both the 2N5657G and MJD340G are rated for a maximum collector current of 500 mA. This parameter is identical between the two devices.

Q: Are the DC current gain specifications the same?

A: Both parts specify a minimum DC current gain (hFE) of 30. However, the test conditions differ: the 2N5657G is specified at 100 mA collector current and 10 V collector-emitter voltage, while the MJD340G is specified at 50 mA collector current and 10 V collector-emitter voltage.

Q: What is the transition frequency for both devices?

A: Both the 2N5657G and MJD340G have a transition frequency of 10 MHz, making them equivalent for frequency-dependent applications within this specification.

Q: What is the operating temperature range for these transistors?

A: Both devices operate across the same temperature range of -65°C to 150°C junction temperature, ensuring thermal compatibility in equivalent applications.