2N5655G Equivalent & Substitute Parts

Part Overview

The 2N5655G is an NPN bipolar junction transistor manufactured by onsemi, rated for 250 V collector-emitter breakdown voltage and 500 mA maximum collector current in a TO-126 through-hole package. This device is classified as obsolete, making identification of functionally equivalent alternatives necessary for ongoing design support and production continuity. The 2N5655G delivers 20 W maximum power dissipation with a 10 MHz transition frequency, suitable for general-purpose switching and amplification applications requiring moderate voltage and current ratings.

Substiute Parts

2N5655G

onsemiIn Stock: 6732N5655G Datasheet

Current PartRFQ

MJE340

NTE Electronics, IncIn Stock: 2035MJE340 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the 2N5655G is determined by electrical and mechanical compatibility across the following critical parameters:

Electrical Compatibility Criteria:

• Transistor type must be NPN
• Maximum collector current must equal or exceed 500 mA
• Collector-emitter breakdown voltage must equal or exceed 250 V
• Maximum power dissipation must equal or exceed 20 W
• DC current gain (hFE) minimum must equal or exceed 30
• Package and mounting type must be TO-126 through-hole

Mechanical Compatibility Criteria:

• Package designation must be TO-126-3 or equivalent TO-225AA
• Through-hole mounting configuration required

The MJE340 meets these substitution criteria with a 300 V breakdown voltage rating (exceeding the 250 V requirement), 500 mA collector current rating, 20 W power dissipation, and identical TO-126 through-hole packaging. The higher voltage rating provides additional design margin without compromising functional compatibility.

Parameter Comparison

Engineering Selection Recommendations

2N5655G (onsemi): This part carries obsolete product status. While 638 units remain in current inventory, long-term availability is not assured. The device is REACH unaffected and carries EAR99 export classification. Selection of this part is appropriate only for repair, maintenance, or short-term production runs where existing stock is available.

MJE340 (NTE Electronics): This part maintains active product status with 1957 units in inventory, ensuring sustained availability for ongoing production. The MJE340 is classified as RoHS non-compliant. The 300 V breakdown voltage rating exceeds the 2N5655G specification, providing additional voltage margin in circuit designs. Identical current, power, and package specifications enable direct functional substitution. Selection of the MJE340 is appropriate for new designs, production continuity, and applications requiring long-term component availability.

Frequently Asked Questions (FAQ)

Q: Can the MJE340 directly replace the 2N5655G in existing circuit designs?

A: Yes. Both devices are NPN transistors with identical 500 mA collector current and 20 W power ratings in TO-126 through-hole packages. The MJE340 features a 300 V breakdown voltage, which exceeds the 2N5655G requirement of 250 V, ensuring compatibility in all applications where the original part was specified.

Q: What is the significance of the higher 300 V breakdown voltage in the MJE340?

A: The MJE340 breakdown voltage of 300 V provides 20% additional voltage margin compared to the 2N5655G specification of 250 V. This higher rating does not degrade performance in circuits designed for 250 V operation; it only extends the safe operating range and provides additional protection against voltage transients.

Q: Are there packaging differences between the 2N5655G and MJE340?

A: No. Both devices use identical TO-126-3 through-hole packaging. Physical dimensions, pin configuration, and mounting requirements are equivalent, enabling direct mechanical substitution on printed circuit boards.

Q: Why is the 2N5655G classified as obsolete?

A: Obsolete classification indicates that the manufacturer (onsemi) has discontinued active production and support for this device. While existing inventory may be available from distributors, long-term supply cannot be guaranteed. The MJE340 provides an active-status alternative with equivalent electrical performance.

Q: What is the difference in DC current gain specifications between these parts?

A: The 2N5655G specifies minimum hFE of 30 at 100 mA collector current and 10 mV Vce. The MJE340 specifies minimum hFE of 30 at 50 mA collector current and 10 V Vce. Both devices meet the minimum gain requirement of 30; the test conditions differ but do not affect functional compatibility in typical circuit applications.

Q: Is the MJE340 suitable for new product designs?

A: Yes. The MJE340 maintains active product status with established supply chains and long-term availability. Its electrical specifications exceed the 2N5655G requirements, making it the appropriate choice for new designs requiring sustained component availability and production continuity.