2N5655 Equivalent & Substitute Parts

Part Overview

The 2N5655 is an NPN bipolar junction transistor manufactured by onsemi, rated for 250 V collector-emitter breakdown voltage and 500 mA maximum collector current in a Through Hole TO-126 package. This device is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement continuity. The 2N5655 is suitable for general-purpose switching and amplification applications requiring moderate voltage and current ratings.

Substiute Parts

2N5655

onsemiIn Stock: 22542N5655 Datasheet

Current PartRFQ

MJE340

NTE Electronics, IncIn Stock: 2035MJE340 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the 2N5655 are identified based on electrical and mechanical compatibility within the following criteria:

Electrical Compatibility Requirements:

• Transistor type: NPN
• Maximum collector current: equal to or greater than 500 mA
• Maximum collector-emitter breakdown voltage: equal to or greater than 250 V
• Maximum power dissipation: equal to or greater than 20 W
• DC current gain (hFE): minimum 30 or greater at comparable operating points
• Mounting type: Through Hole

Mechanical Compatibility Requirements:

• Package / Case: TO-126-3 or equivalent TO-225AA footprint

The MJE340 meets these substitution criteria with a higher collector-emitter breakdown voltage rating of 300 V, identical maximum collector current of 500 mA, and equivalent power dissipation of 20 W in the same TO-126 Through Hole package.

Parameter Comparison

Engineering Selection Recommendations

2N5655 (onsemi): This part is classified as obsolete. While 2200 units are currently in stock, long-term procurement availability is not assured. The 2N5655 is suitable for applications where existing inventory supports immediate requirements or where design legacy constraints mandate the original part number.

MJE340 (NTE Electronics): This part is classified as active and represents the recommended selection for new designs and ongoing procurement. The MJE340 provides superior voltage rating (300 V versus 250 V), ensuring enhanced margin in applications approaching the 250 V specification limit. Both parts share identical collector current and power dissipation ratings, identical package footprint, and compatible DC current gain characteristics. The MJE340 is available with 1957 units in stock and offers long-term supply continuity.

Frequently Asked Questions (FAQ)

Q: Can the MJE340 directly replace the 2N5655 in existing designs?

A: Yes. Both devices are NPN transistors in TO-126 packages with identical maximum collector current (500 mA) and power dissipation (20 W). The MJE340 features a higher collector-emitter breakdown voltage (300 V versus 250 V), which provides additional design margin without requiring circuit modifications.

Q: What is the primary reason to substitute the 2N5655?

A: The 2N5655 is classified as obsolete. The MJE340 is an active product with assured long-term availability, making it the appropriate choice for new designs and sustained production requirements.

Q: Are there package compatibility concerns between these parts?

A: No. Both the 2N5655 and MJE340 use the TO-126-3 package with identical Through Hole mounting, ensuring direct mechanical and electrical compatibility on printed circuit boards.

Q: How do the DC current gain specifications compare?

A: The 2N5655 specifies a minimum hFE of 30 at 100 mA collector current and 10 mV Vce. The MJE340 specifies a minimum hFE of 30 at 50 mA collector current and 10 V Vce. Both devices meet the minimum gain requirement of 30, with testing conditions differing slightly between manufacturers.

Q: What compliance differences exist between these parts?

A: Both the 2N5655 and MJE340 are RoHS non-compliant and carry ECCN classification EAR99. Both are unaffected by REACH regulations. Compliance requirements should be evaluated based on end-application and regional standards.