2N5631 Equivalent & Substitute Parts

Part Overview

The 2N5631 is a PNP power bipolar junction transistor manufactured by Microchip Technology, rated for 140 V collector-emitter breakdown voltage and 16 A maximum collector current with 200 W power dissipation capability. The device is housed in a Through Hole TO-204AD (TO-3) package and maintains Active product status. Equivalent and substitute parts are identified to support design flexibility, inventory management, and supply chain continuity for applications requiring PNP or NPN power transistor functionality within specified electrical and mechanical parameters.

Substiute Parts

2N5631

Microchip TechnologyIn Stock: 11132N5631 Datasheet

Current PartRFQ

MJ15001G

onsemiIn Stock: 1206MJ15001G Datasheet

DirectRFQ

2N3773G

onsemiIn Stock: 21572N3773G Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the 2N5631 is determined by alignment of the following critical parameters: maximum collector-emitter breakdown voltage (140 V), maximum collector current rating (16 A or compatible), maximum power dissipation (200 W or compatible), Through Hole mounting configuration, and TO-204 (TO-3) package compatibility. The identified substitute parts are NPN transistors rather than PNP devices; circuit topology and biasing configuration must accommodate polarity reversal. Both substitute parts maintain the 140 V breakdown voltage specification and Through Hole TO-204 (TO-3) packaging. Electrical performance differences exist in collector current ratings, power dissipation limits, and saturation characteristics, which determine application suitability within specific circuit requirements.

Parameter Comparison

Engineering Selection Recommendations

All three transistors maintain Active product status and REACH Unaffected compliance classification. The 2N5631 is a PNP device, while MJ15001G and 2N3773G are NPN devices; circuit redesign is required for direct substitution to accommodate polarity reversal in biasing and signal paths.

MJ15001G Selection Criteria: This onsemi NPN transistor matches the 140 V breakdown voltage and 200 W power rating of the 2N5631. Maximum collector current is rated at 15 A, which is 1 A lower than the 2N5631. The MJ15001G is ROHS3 Compliant and suitable for applications where the 15 A current rating is acceptable within circuit design margins.

2N3773G Selection Criteria: This onsemi NPN transistor matches the 140 V breakdown voltage and 16 A collector current rating of the 2N5631. Maximum power dissipation is rated at 150 W, which is 50 W lower than the 2N5631. The 2N3773G is ROHS3 Compliant and suitable for applications where the 150 W power limit does not exceed thermal design requirements.

All three devices are housed in Through Hole TO-204 (TO-3) packages and are compatible with identical PCB footprints and mounting hardware.

Frequently Asked Questions (FAQ)

Q: Can the MJ15001G directly replace the 2N5631 in all applications?

A: The MJ15001G is an NPN transistor while the 2N5631 is PNP. Circuit biasing and signal polarity must be reversed. The MJ15001G maximum collector current is 15 A versus 16 A for the 2N5631; verify that circuit current requirements do not exceed 15 A. Both devices share 140 V breakdown voltage and 200 W power rating specifications.

Q: Can the 2N3773G directly replace the 2N5631 in all applications?

A: The 2N3773G is an NPN transistor while the 2N5631 is PNP. Circuit biasing and signal polarity must be reversed. The 2N3773G maximum power dissipation is 150 W versus 200 W for the 2N5631; verify that circuit power dissipation does not exceed 150 W. Both devices share 140 V breakdown voltage and 16 A collector current specifications.

Q: Are the package dimensions identical between the 2N5631 and substitute parts?

A: All three transistors use Through Hole TO-204 (TO-3) packaging. PCB footprints and mounting hardware are compatible. Verify specific package outline drawings with manufacturer datasheets for lead spacing and mounting hole dimensions.

Q: What compliance certifications apply to these transistors?

A: All three devices are REACH Unaffected and classified under ECCN EAR99. The MJ15001G and 2N3773G are ROHS3 Compliant. The 2N5631 ROHS status is not specified in available documentation.

Q: Which substitute part is preferred for high-power applications?

A: The MJ15001G maintains the 200 W power rating of the 2N5631 and is preferred for applications requiring maximum power dissipation capability. The 2N3773G is limited to 150 W and is suitable for lower-power applications within that thermal envelope.

Q: Are there inventory considerations for these substitute parts?

A: The 2N5631 has 1102 pieces in stock. The MJ15001G has 1139 pieces in stock. The 2N3773G has 2100 pieces in stock. All three devices are available as new original components.