2N5629 Equivalent & Substitute Parts

Part Overview

The 2N5629 is an active PNP power bipolar junction transistor manufactured by Microchip Technology, rated for 100 V collector-emitter breakdown voltage and 16 A maximum collector current with 200 W power dissipation capability. The device is packaged in a Through Hole TO-204AD (TO-3) configuration, suitable for high-power switching and amplification applications requiring PNP polarity.

Substitute parts are identified to address application requirements where alternative transistor types, voltage ratings, or current specifications may be necessary while maintaining functional compatibility within the TO-3 package family.

Substiute Parts

2N5629

Microchip TechnologyIn Stock: 14862N5629 Datasheet

Current PartRFQ

2N3773G

onsemiIn Stock: 21572N3773G Datasheet

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MJ15001G

onsemiIn Stock: 1206MJ15001G Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the 2N5629 are identified based on the following criteria:

Primary Substitution Parameters:

• Mounting Type: Through Hole (maintained across all substitutes)
• Package / Case: TO-204AA, TO-3 (mechanical compatibility)
• Current - Collector (Ic) (Max): 16 A or greater
• Power - Max: 200 W or greater
• Voltage - Collector Emitter Breakdown (Max): Equal to or exceeding 100 V

Substitution Logic: The 2N3773G and MJ15001G are classified as NPN transistors, representing a polarity inversion from the PNP 2N5629. These devices are listed as substitutes based on their electrical ratings and package compatibility. Both substitute parts meet or exceed the collector current (16 A / 15 A), voltage breakdown (140 V), and power dissipation (150 W / 200 W) specifications of the main part. All three devices utilize the TO-3 package family, ensuring mechanical interchangeability in standard through-hole mounting applications.

Parameter Comparison

Engineering Selection Recommendations

2N3773G Selection Criteria: The 2N3773G is an active NPN transistor from onsemi with 140 V collector-emitter breakdown voltage and 16 A maximum collector current. This device is suitable for applications where NPN polarity is required and voltage headroom exceeding 100 V is beneficial. Power dissipation is rated at 150 W, which is lower than the 2N5629. The 2N3773G is ROHS3 compliant and REACH unaffected, meeting current regulatory requirements.

MJ15001G Selection Criteria: The MJ15001G is an active NPN transistor from onsemi with 140 V collector-emitter breakdown voltage, 15 A maximum collector current, and 200 W power dissipation matching the 2N5629. This device includes a 2 MHz transition frequency specification. The MJ15001G is ROHS3 compliant and REACH unaffected. The 15 A collector current rating is marginally lower than the 2N5629 specification.

Compliance and Regulatory Status: All three devices maintain active product status and REACH unaffected classification. The 2N3773G and MJ15001G both carry ROHS3 compliance certification, indicating adherence to current environmental and hazardous substance restrictions.

Frequently Asked Questions (FAQ)

Q: Can the 2N3773G or MJ15001G directly replace the 2N5629 in existing circuit designs?

A: Direct replacement requires circuit topology evaluation. The 2N5629 is a PNP transistor, while both substitute parts are NPN devices. This polarity difference necessitates modification of bias networks and signal paths. Mechanical compatibility is confirmed through identical TO-3 package specifications.

Q: What are the voltage rating differences between the 2N5629 and substitute parts?

A: The 2N5629 is rated for 100 V maximum collector-emitter breakdown voltage. Both the 2N3773G and MJ15001G are rated for 140 V, providing 40 V additional voltage margin. This higher rating does not prevent substitution in applications operating below 100 V.

Q: How do the power dissipation ratings compare?

A: The 2N5629 and MJ15001G are both rated for 200 W maximum power dissipation. The 2N3773G is rated for 150 W, representing a 25% reduction in power handling capability. Applications requiring sustained operation near 200 W should prioritize the MJ15001G.

Q: Are there current rating differences that affect substitution?

A: The 2N5629 and 2N3773G both support 16 A maximum collector current. The MJ15001G is rated for 15 A, a 1 A reduction. For applications operating near the 16 A specification, the 2N3773G provides equivalent current handling.

Q: What packaging considerations apply to these devices?

A: All three devices utilize the TO-204AA and TO-3 package family with Through Hole mounting. Mechanical interchangeability is confirmed. Thermal management and PCB layout considerations remain consistent across all three parts.

Q: Do the substitute parts carry the same regulatory certifications?

A: The 2N5629 is REACH unaffected with EAR99 ECCN classification. Both substitute parts (2N3773G and MJ15001G) maintain identical REACH unaffected status and EAR99 ECCN classification. The 2N3773G and MJ15001G additionally carry ROHS3 compliance certification.