Equivalent & Substitute Parts for 2N5551-AP (Micro Commercial Co)

Part Overview

The 2N5551-AP is a Bipolar Junction Transistor (BJT) in the NPN configuration, rated for 160V collector-emitter breakdown voltage, 600mA collector current, 625mW power dissipation, and packaged in TO-92. This part is classified as obsolete, making it essential to identify suitable replacements with comparable electrical and mechanical specifications within the Transistors, Bipolar (BJT) product category.

Key Parameters

Parameter	Value
Transistor Type	NPN
Collector-Emitter Breakdown Voltage (Max)	160 V
Collector Current (Ic) (Max)	600 mA
Power Dissipation (Max)	625 mW
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic	500mV @ 5mA, 50mA
Frequency - Transition	300MHz
Operating Temperature	-55°C ~ 150°C
Package / Case	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type	Through Hole
RoHS Status	RoHS Compliant

Substitute Part Grouping Explanation

Substitution is determined by matching the core parameters: transistor type (NPN), maximum collector-emitter breakdown voltage, collector current rating, power dissipation, DC current gain, saturation voltage, transition frequency, operating temperature range, through-hole mounting, and TO-92-3 package case. Substitute parts must share these values or exceed requirements. Compliance status and physical compatibility (package/case) are also required for direct replacement.

Key parameters for substitution:

Transistor Type
Collector-Emitter Breakdown Voltage (Max)
Collector Current (Max)
Power Dissipation (Max)
DC Current Gain (hFE)
Vce Saturation (Max) @ Ib, Ic
Frequency - Transition
Operating Temperature
Package / Case
Mounting Type
RoHS Status

Parameter Comparison

Part Number	Manufacturer	Status	Transistor Type	Collector-Emitter Breakdown Voltage (Max)	Collector Current (Max)	Power (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Vce Saturation (Max) @ Ib, Ic	Frequency - Transition	Operating Temp	Package / Case	Mounting Type	RoHS Status
2N5551-AP	Micro Commercial Co	Obsolete	NPN	160 V	600 mA	625 mW	80 @ 10mA, 5V	500mV @ 5mA, 50mA	300MHz	-55°C ~ 150°C	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	Through Hole	RoHS Compliant
2N5551TA	onsemi	Active	NPN	160 V	600 mA	625 mW	80 @ 10mA, 5V	200mV @ 5mA, 50mA	100MHz	-55°C ~ 150°C	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	Through Hole	ROHS3 Compliant
2N5551TF	onsemi	Active	NPN	160 V	600 mA	625 mW	80 @ 10mA, 5V	200mV @ 5mA, 50mA	100MHz	-55°C ~ 150°C	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	Through Hole	ROHS3 Compliant

Engineering Selection Recommendations

Given the obsolete status of the 2N5551-AP, selection should prioritize substitute parts with active product status, matching package and mounting type, and up-to-date RoHS compliance. Both 2N5551TA and 2N5551TF from onsemi fulfill these fundamental requirements and provide uninterrupted compliance with RoHS3. All key electrical and mechanical attributes are maintained within provided parameters.

Frequently Asked Questions (FAQ)

Q1: What are the critical parameters for substituting the 2N5551-AP?
Substitution is based on NPN transistor type, collector-emitter breakdown voltage, collector current rating, power dissipation, DC current gain, saturation voltage, transition frequency, operating temperature range, mounting type, package/case, and RoHS compliance.

Q2: Are the substitute parts physically compatible?
The substitute parts 2N5551TA and 2N5551TF use the same TO-226-3, TO-92-3 (TO-226AA) case and through-hole mounting as the original.

Q3: Do the substitute parts offer the same RoHS compliance?
Both 2N5551TA and 2N5551TF are listed as ROHS3 Compliant.

Q4: Are there differences in electrical performance between the original and substitutes?
The substitute parts have a lower Vce saturation (200mV vs 500mV) and lower transition frequency (100MHz vs 300MHz). Other parameters remain consistent.

Q5: Why is it necessary to select substitutes for the 2N5551-AP?
The main part is obsolete and no longer supplied as new original inventory, requiring selection from active alternatives that maintain key specifications.

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