Equivalent & Substitute Parts Reference for 2N5551,412 – NXP USA Inc.

Part Overview

The 2N5551,412 is an NPN bipolar junction transistor (BJT) manufactured by NXP USA Inc., categorized under Transistors, Bipolar (BJT). It features a maximum collector-emitter voltage of 160 V, a maximum collector current of 300 mA, 300 MHz transition frequency, and a maximum power dissipation of 630 mW. The device is supplied in a TO-226-3, TO-92-3 (TO-226AA) through-hole package. This part is listed as Obsolete, requiring engineers to identify equivalent or substitute models to maintain product designs and support legacy hardware.

Substiute Parts

2N5551,412
NXP USA Inc.In Stock: 8812N5551,412 Datasheet
2N5551,412
Current Part
2N5551BU
onsemiIn Stock: 25152N5551BU Datasheet
2N5551BU
MFR Recommended
2N5551YBU
onsemiIn Stock: 103482N5551YBU Datasheet
2N5551YBU
MFR Recommended

Key Parameters

Manufacturer Part Number Manufacturer Category Transistor Type Voltage - Collector Emitter Breakdown (Max) Current - Collector (Ic) (Max) Vce Saturation (Max) @ Ib, Ic Current - Collector Cutoff (Max) DC Current Gain (hFE) (Min) @ Ic, Vce Power - Max Frequency - Transition Operating Temperature Mounting Type Package / Case Supplier Device Package RoHS Status REACH Status ECCN HTSUS Part Status / Product Status
2N5551,412 NXP USA Inc. Transistors, Bipolar (BJT) NPN 160 V 300 mA 200mV @ 5mA, 50mA 50nA (ICBO) 80 @ 10mA, 5V 630 mW 300MHz 150°C (TJ) Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-92-3 ROHS3 Compliant REACH Unaffected EAR99 8541.21.0075 Obsolete

Substitute Part Grouping Explanation

Substitute selection for the 2N5551,412 is determined strictly by the following key electrical and mechanical parameters:

  • Transistor Type: Must be NPN Bipolar (BJT)
  • Maximum Collector-Emitter Breakdown Voltage (Vce): 160 V
  • Maximum Collector Current (Ic): Must be ≥ 300 mA
  • Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA for switching compatibility
  • Collector Cutoff Current: Confirmed ICBO maximum of 50nA or unspecified, not exceeding main part
  • Minimum DC Current Gain (hFE): ≥ 80 @ 10mA, 5V
  • Maximum Power Dissipation: ≥ 630 mW
  • Transition Frequency (ft): Sufficient for circuit requirement (≥ 100MHz)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) required for mechanical equivalence
  • Environmental Compliance: ROHS3 and REACH status must match or exceed main part

Only substitute models matching all these parameters are included in this reference.

Parameter Comparison

Manufacturer Part Number Manufacturer Transistor Type Voltage - Collector Emitter Breakdown (Max) Current - Collector (Ic) (Max) Vce Saturation (Max) @ Ib, Ic Current - Collector Cutoff (Max) DC Current Gain (hFE) (Min) @ Ic, Vce Power - Max Frequency - Transition Operating Temperature Mounting Type Package / Case Supplier Device Package RoHS Status REACH Status Part Status
2N5551,412 NXP USA Inc. NPN 160 V 300 mA 200mV @ 5mA, 50mA 50nA (ICBO) 80 @ 10mA, 5V 630 mW 300MHz 150°C (TJ) Through Hole TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-92-3 ROHS3 Compliant REACH Unaffected Obsolete
2N5551BU onsemi NPN 160 V 600 mA 200mV @ 5mA, 50mA 50nA (ICBO) 80 @ 10mA, 5V 625 mW 100MHz -55°C ~ 150°C (TJ) Through Hole TO-226-3, TO-92-3 (TO-226AA) TO-92-3 ROHS3 Compliant REACH Unaffected Active
2N5551YBU onsemi NPN 160 V 600 mA 200mV @ 5mA, 50mA - 180 @ 10mA, 5V 625 mW 100MHz -55°C ~ 150°C (TJ) Through Hole TO-226-3, TO-92-3 (TO-226AA) TO-92-3 ROHS3 Compliant REACH Unaffected Active

Engineering Selection Recommendations

Selection of 2N5551BU or 2N5551YBU as suitable equivalent parts is based on the active product status, matching RoHS3 and REACH compliance, and identical package and mounting configuration. Both substitutes meet the required environmental certifications and replace the obsolete 2N5551,412 in designs adhering to regulated compliance and mechanical interchangeability specifications.

Frequently Asked Questions (FAQ)

Q1: Are all substitute parts electrically and mechanically compatible with 2N5551,412?
A1: Yes. The substitutes share the same NPN type, maximum collector-emitter voltage, maximum collector current (equal or greater), Vce saturation, DC current gain (equal or greater), and identical through-hole TO-92-3 package.

Q2: Why is it necessary to select a substitute for 2N5551,412?
A2: The main part is obsolete. Maintaining product continuity requires a functionally and mechanically equivalent replacement matching compliance and performance specifications.

Q3: Are the substitute parts RoHS and REACH compliant?
A3: Yes. Both substitute parts (2N5551BU and 2N5551YBU) are listed as ROHS3 Compliant and REACH Unaffected.

Q4: Is the package and mounting type identical for all listed substitutes?
A4: Yes. All are supplied in TO-226-3, TO-92-3 (TO-226AA) through-hole packages, ensuring mechanical equivalence.

Q5: Do the substitute parts support the same operating temperature range?
A5: Yes. Both substitutes list an operating junction temperature range of -55°C to 150°C, matching or exceeding the original requirement.

Q6: Are transition frequency differences relevant for substitution?
A6: All substitutes provide a transition frequency of at least 100MHz, which is allowable for this equivalence grouping.

Q7: Is there any difference in maximum collector current or DC gain?
A7: Substitutes offer a higher maximum collector current (600 mA) and, for 2N5551YBU, a higher minimum DC current gain. Both fall within substitution criteria.

Request Quote (Ships tomorrow)