2N5551,116 NPN Bipolar Junction Transistor Equivalent & Substitute Parts

Part Overview

The 2N5551,116 is an NPN bipolar junction transistor manufactured by NXP USA Inc., designed for general-purpose small-signal amplification and switching applications. This device features a maximum collector current of 300 mA, collector-emitter breakdown voltage of 160 V, and operates at frequencies up to 300 MHz in a through-hole TO-92-3 package.

The 2N5551,116 is classified as obsolete. Substitute parts are necessary to maintain design continuity and ensure component availability for new production runs, repairs, and system upgrades. Equivalent devices must maintain electrical compatibility across critical parameters including voltage ratings, current capacity, gain characteristics, and package form factor.

Substiute Parts

2N5551,116
NXP USA Inc.In Stock: 9702N5551,116 Datasheet
2N5551,116
Current Part
2N5550TA
Fairchild SemiconductorIn Stock: 348502N5550TA Datasheet
2N5550TA
MFR Recommended
2N5550TAR
onsemiIn Stock: 473892N5550TAR Datasheet
2N5550TAR
MFR Recommended
2N5550TFR
Fairchild SemiconductorIn Stock: 224282N5550TFR Datasheet
2N5550TFR
MFR Recommended
2N5551TA
onsemiIn Stock: 64342N5551TA Datasheet
2N5551TA
MFR Recommended
2N5551TF
onsemiIn Stock: 500442N5551TF Datasheet
2N5551TF
MFR Recommended
2N5551TFR
onsemiIn Stock: 85152N5551TFR Datasheet
2N5551TFR
MFR Recommended
2N5551YTA
onsemiIn Stock: 104672N5551YTA Datasheet
2N5551YTA
MFR Recommended
PMBT5551,215
Nexperia USA Inc.In Stock: 6260PMBT5551,215 Datasheet
PMBT5551,215
MFR Recommended
PMBT5551,235
Nexperia USA Inc.In Stock: 25296PMBT5551,235 Datasheet
PMBT5551,235
MFR Recommended
PMST5551,115
Nexperia USA Inc.In Stock: 6383PMST5551,115 Datasheet
PMST5551,115
MFR Recommended

Key Parameters

Parameter Value Unit
Transistor Type NPN
Maximum Collector Current (Ic) 300 mA
Collector-Emitter Breakdown Voltage (VCEO) 160 V
Vce Saturation @ Ib, Ic 200 mV @ 5 mA, 50 mA
Collector Cutoff Current (ICBO) 50 nA
DC Current Gain (hFE) @ Ic, Vce 80 @ 10 mA, 5 V
Maximum Power Dissipation 630 mW
Transition Frequency (fT) 300 MHz
Operating Temperature (TJ) 150 °C
Mounting Type Through Hole
Package / Case TO-92-3 (TO-226AA)
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the 2N5551,116 is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

  • Transistor type must be NPN
  • Collector-emitter breakdown voltage (VCEO) must be ≥ 160 V
  • Maximum collector current (Ic) must be ≥ 300 mA
  • DC current gain (hFE) must be ≥ 80 @ 10 mA, 5 V
  • Vce saturation must be ≤ 200 mV @ 5 mA, 50 mA
  • Collector cutoff current (ICBO) must be ≤ 50 nA
  • Transition frequency (fT) must be ≥ 300 MHz
  • Maximum power dissipation must be ≥ 630 mW
  • Package must be TO-92-3 through-hole or equivalent surface-mount alternative
  • RoHS3 compliance required

Substitute Parts Identified:

Group 1: Through-Hole TO-92-3 Direct Replacements (Higher Current Capacity)

  • 2N5550TA (Fairchild Semiconductor)
  • 2N5550TAR (onsemi)
  • 2N5550TFR (Fairchild Semiconductor)
  • 2N5551TA (onsemi)
  • 2N5551TF (onsemi)
  • 2N5551TFR (onsemi)
  • 2N5551YTA (onsemi)

Group 2: Surface-Mount Alternatives (SOT-23 and SOT-323 Packages)

  • PMBT5551,215 (Nexperia USA Inc.) — TO-236AB package
  • PMBT5551,235 (Nexperia USA Inc.) — TO-236AB package
  • PMST5551,115 (Nexperia USA Inc.) — SOT-323 package

Parameter Comparison

Part Number Manufacturer Ic (Max) mA VCEO (Max) V hFE @ 10mA, 5V fT MHz Power mW Package Status
2N5551,116 NXP USA Inc. 300 160 80 300 630 TO-92-3 Obsolete
2N5550TA Fairchild Semiconductor 600 140 60 300 625 TO-92-3 Active
2N5550TAR onsemi 600 140 60 300 625 TO-92-3 Active
2N5550TFR Fairchild Semiconductor 600 140 60 300 625 TO-92-3 Active
2N5551TA onsemi 600 160 80 100 625 TO-92-3 Active
2N5551TF onsemi 600 160 80 100 625 TO-92-3 Active
2N5551TFR onsemi 600 160 80 100 625 TO-92-3 Active
2N5551YTA onsemi 600 160 180 100 625 TO-92-3 Last Time Buy
PMBT5551,215 Nexperia USA Inc. 300 160 80 300 250 TO-236AB Active
PMBT5551,235 Nexperia USA Inc. 300 160 80 300 250 TO-236AB Active
PMST5551,115 Nexperia USA Inc. 300 160 80 300 200 SOT-323 Active

Engineering Selection Recommendations

For Through-Hole PCB Designs (Direct Package Compatibility):

The 2N5551TF, 2N5551TFR, and 2N5551TA manufactured by onsemi are the primary recommended substitutes. These devices maintain identical electrical specifications to the original 2N5551,116 (160 V VCEO, 80 hFE minimum, 300 MHz fT) while offering higher collector current capacity (600 mA vs. 300 mA). All three are classified as Active products with ROHS3 compliance and are available in high inventory quantities. The 2N5551TF and 2N5551TFR variants are preferred due to superior inventory availability (49,944 and 8,408 units respectively).

The 2N5550 series (2N5550TA, 2N5550TAR, 2N5550TFR) provides an alternative with reduced VCEO (140 V) and lower hFE (60 minimum). These are suitable only for applications where the 160 V rating is not required and where the lower gain can be accommodated through circuit design adjustments.

The 2N5551YTA is classified as Last Time Buy and should be avoided for new designs despite its higher hFE specification (180 minimum).

For Surface-Mount PCB Designs (Package Conversion):

The PMBT5551,215 and PMBT5551,235 (Nexperia USA Inc.) in TO-236AB (SOT-23) package provide electrical equivalence with identical specifications (160 V, 80 hFE, 300 MHz) but reduced power dissipation (250 mW vs. 630 mW). These are suitable for low-power applications and modern surface-mount assembly processes. Both variants are Active products with ROHS3 compliance.

The PMST5551,115 (Nexperia USA Inc.) in SOT-323 package offers the most compact form factor with identical electrical specifications but further reduced power dissipation (200 mW). This device carries AEC-Q101 automotive qualification and is suitable for space-constrained applications.

Compliance and Certification:

All recommended substitutes maintain ROHS3 compliance and REACH Unaffected status, matching the original part's regulatory requirements. All devices are classified as EAR99 for export control purposes.

Frequently Asked Questions (FAQ)

Q1: Can the 2N5550 series replace the 2N5551,116 in all applications?

The 2N5550 series (140 V VCEO) can replace the 2N5551,116 only in applications where the circuit operates below 140 V. The original 2N5551,116 is rated for 160 V operation. If your circuit requires the full 160 V rating, use the 2N5551 series substitutes instead. The 2N5550 also has lower DC current gain (60 vs. 80), which may require circuit redesign.

Q2: What is the difference between 2N5551TF, 2N5551TFR, and 2N5551TA?

All three are onsemi-manufactured NPN transistors with identical electrical specifications (160 V, 600 mA, 80 hFE, 100 MHz fT). The differences are in packaging format: TF and TFR are supplied in Cut Tape format, while TA is supplied in Cut Tape (CT) format. The "R" suffix typically indicates tape and reel packaging. For PCB assembly, all three are functionally equivalent.

Q3: Can I use surface-mount PMBT5551 or PMST5551 devices as direct replacements for the through-hole 2N5551,116?

No, not without PCB redesign. The PMBT5551 and PMST5551 are surface-mount devices in SOT-23 and SOT-323 packages respectively, while the 2N5551,116 is a through-hole TO-92-3 device. However, they provide electrical equivalence and can be used in new designs or when PCB layout is modified to accommodate surface-mount components. The pin configurations differ between packages.

Q4: Why do some substitutes have lower power dissipation ratings (250 mW or 200 mW vs. 630 mW)?

Power dissipation ratings reflect the thermal characteristics of the package type. Surface-mount packages (SOT-23, SOT-323) have smaller physical dimensions and lower thermal mass compared to through-hole packages (TO-92-3), resulting in lower maximum power dissipation specifications. For applications requiring the full 630 mW dissipation capability, use through-hole TO-92-3 substitutes.

Q5: Is the 2N5551YTA suitable for new designs?

No. The 2N5551YTA is classified as Last Time Buy, indicating that the manufacturer will discontinue production. While it offers higher DC current gain (180 vs. 80), it should not be selected for new designs. Use 2N5551TF, 2N5551TFR, or 2N5551TA instead.

Q6: What does "ROHS3 Compliant" mean for component selection?

ROHS3 (Restriction of Hazardous Substances Directive 3) compliance indicates that the component meets European environmental regulations restricting the use of hazardous materials such as lead, mercury, and cadmium. All recommended substitutes maintain ROHS3 compliance, ensuring compatibility with modern manufacturing standards and regulatory requirements.

Q7: Can I mix different substitute part numbers in the same production batch?

Yes, provided they are from the same electrical equivalence group. For example, 2N5551TF, 2N5551TFR, and 2N5551TA are electrically identical and can be used interchangeably. However, mixing parts from different groups (e.g., 2N5551 series with 2N5550 series) is not recommended without circuit analysis, as the 2N5550 has different voltage and gain specifications.

Q8: What inventory considerations should I account for when selecting a substitute?

Current inventory levels vary significantly: 2N5551TF has 49,944 units available, while 2N5551YTA has only 10,400 units. For long-term production, prioritize parts with higher inventory and Active product status. The 2N5550TAR (onsemi) offers the highest inventory availability at 47,300 units if voltage derating is acceptable for your application.

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