2N5550RLRPG Equivalent & Substitute Parts

Part Overview

The 2N5550RLRPG is an NPN bipolar junction transistor manufactured by onsemi, rated for 140 V collector-emitter breakdown voltage and 600 mA maximum collector current. This device is packaged in a through-hole TO-92 (TO-226-3) configuration and is designed for small-signal switching and amplification applications. The part is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement continuity. Direct substitutes with active product status and identical electrical specifications are available from multiple manufacturers, as well as functionally similar alternatives in different package formats.

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN	—
Voltage - Collector Emitter Breakdown (Max)	140	V
Current - Collector (Ic) (Max)	600	mA
Power - Max	625	mW
Frequency - Transition	300	MHz
DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 10mA, 5V	—
Vce Saturation (Max) @ Ib, Ic	250mV @ 5mA, 50mA	—
Current - Collector Cutoff (Max)	100	nA
Operating Temperature Range	-55 to 150	°C
Mounting Type	Through Hole	—
Package / Case	TO-226-3, TO-92-3	—

Substitute Part Grouping Explanation

Substitute parts for the 2N5550RLRPG are classified into two categories based on electrical and mechanical compatibility:

Direct Electrical Equivalents (Same Package Format)

Direct substitutes maintain identical electrical specifications and through-hole TO-92-3 packaging. These parts are interchangeable at the circuit level without design modification:

Maximum collector-emitter breakdown voltage: 140 V
Maximum collector current: 600 mA
Maximum power dissipation: 625 mW
Transition frequency: 300 MHz
DC current gain (hFE): 60 minimum @ 10mA, 5V
Vce saturation: 250mV @ 5mA, 50mA
Mounting: Through Hole TO-92-3

Functionally Similar Alternatives (Different Package Format)

Similar alternatives maintain the same electrical specifications but employ different package technologies. These parts require PCB layout and assembly process modifications:

Maximum collector-emitter breakdown voltage: 140 V
Maximum collector current: 600 mA or higher
DC current gain (hFE): 60 minimum or higher
Mounting: Surface Mount (SOT-23-3) or alternative through-hole formats

Enhanced Performance Alternatives

Enhanced alternatives exceed the electrical specifications of the 2N5550RLRPG while maintaining NPN polarity and 140 V breakdown voltage rating. These parts provide higher current capacity or power handling:

Maximum collector-emitter breakdown voltage: 140 V
Maximum collector current: 1 A or higher
Maximum power dissipation: 1 W or higher

Parameter Comparison

Parameter	2N5550RLRPG (Main)	2N5550TA	2N5550TAR	2N5550TFR	MMBT5550LT1G	ZTX455STZ
Manufacturer	onsemi	Fairchild Semiconductor	onsemi	Fairchild Semiconductor	onsemi	Diodes Incorporated
Product Status	Obsolete	Active	Active	Active	Active	Active
Transistor Type	NPN	NPN	NPN	NPN	NPN	NPN
Voltage - Collector Emitter Breakdown (Max)	140 V	140 V	140 V	140 V	140 V	140 V
Current - Collector (Ic) (Max)	600 mA	600 mA	600 mA	600 mA	600 mA	1 A
Power - Max	625 mW	625 mW	625 mW	625 mW	225 mW	1 W
Frequency - Transition	300 MHz	300 MHz	300 MHz	300 MHz	—	100 MHz
DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 10mA, 5V	60 @ 10mA, 5V	60 @ 10mA, 5V	60 @ 10mA, 5V	60 @ 10mA, 5V	100 @ 150mA, 10V
Vce Saturation (Max) @ Ib, Ic	250mV @ 5mA, 50mA	250mV @ 5mA, 50mA	250mV @ 5mA, 50mA	250mV @ 5mA, 50mA	250mV @ 5mA, 50mA	700mV @ 15mA, 150mA
Current - Collector Cutoff (Max)	100 nA	100 nA	100 nA	100 nA	100 nA	100 nA
Operating Temperature Range	-55 to 150°C	150°C	150°C	150°C	-55 to 150°C	-55 to 200°C
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole	Surface Mount	Through Hole
Package / Case	TO-226-3, TO-92-3	TO-226-3, TO-92-3	TO-226-3, TO-92-3	TO-226-3, TO-92-3	TO-236-3, SOT-23-3	E-Line-3
RoHS Status	—	—	ROHS3 Compliant	—	ROHS3 Compliant	ROHS3 Compliant
REACH Status	REACH Unaffected	—	REACH Unaffected	REACH Unaffected	REACH Unaffected	REACH Unaffected

Engineering Selection Recommendations

For Direct Pin-Compatible Replacement (Through-Hole TO-92-3)

The 2N5550TA, 2N5550TAR, and 2N5550TFR are direct electrical and mechanical equivalents of the 2N5550RLRPG. All three parts maintain identical electrical specifications and through-hole TO-92-3 packaging, enabling direct substitution without circuit redesign or PCB layout modification.

2N5550TA (Fairchild Semiconductor): Active product status with bulk packaging. Suitable for applications requiring standard through-hole component procurement.
2N5550TAR (onsemi): Active product status with cut tape packaging and ROHS3 compliance. Recommended for high-volume automated assembly processes and applications with RoHS regulatory requirements.
2N5550TFR (Fairchild Semiconductor): Active product status with bulk packaging. Suitable for applications requiring standard through-hole component procurement.

For Surface Mount Applications (SOT-23-3)

The MMBT5550LT1G is a functionally equivalent alternative in surface-mount SOT-23-3 (TO-236) package format. This part maintains identical electrical specifications for collector-emitter breakdown voltage, collector current, and DC current gain. However, maximum power dissipation is reduced to 225 mW compared to 625 mW in the through-hole version. This part requires PCB redesign and surface-mount assembly capability. ROHS3 compliance and REACH unaffected status are provided.

For Enhanced Performance Requirements (Higher Current or Power)

The ZTX455STZ is a functionally similar alternative manufactured by Diodes Incorporated in through-hole E-Line package format. This part exceeds the electrical specifications of the 2N5550RLRPG with 1 A maximum collector current and 1 W maximum power dissipation. The transition frequency is reduced to 100 MHz, and Vce saturation is higher at 700mV. This part is suitable for applications requiring higher current handling or power dissipation within the 140 V breakdown voltage constraint. ROHS3 compliance and extended operating temperature range to 200°C are provided.

Frequently Asked Questions (FAQ)

Q: Can the 2N5550TA, 2N5550TAR, and 2N5550TFR be used interchangeably with the 2N5550RLRPG?

A: Yes. All three parts are direct electrical and mechanical equivalents. They maintain identical maximum ratings for collector-emitter breakdown voltage (140 V), collector current (600 mA), power dissipation (625 mW), transition frequency (300 MHz), and DC current gain (60 minimum @ 10mA, 5V). Through-hole TO-92-3 packaging is identical, enabling direct substitution without circuit modification or PCB redesign.

Q: What is the difference between 2N5550TA, 2N5550TAR, and 2N5550TFR?

A: The three parts are electrically identical but differ in manufacturer and packaging format. 2N5550TA and 2N5550TFR are supplied by Fairchild Semiconductor in bulk packaging. 2N5550TAR is supplied by onsemi in cut tape packaging with ROHS3 compliance certification. Selection depends on procurement requirements, assembly process compatibility, and regulatory compliance needs.

Q: Can the MMBT5550LT1G replace the 2N5550RLRPG in existing designs?

A: The MMBT5550LT1G is electrically equivalent but requires design modification. It uses surface-mount SOT-23-3 packaging instead of through-hole TO-92-3, necessitating PCB layout redesign and surface-mount assembly capability. Maximum power dissipation is reduced to 225 mW. Use this part only when surface-mount technology is required or preferred for new designs.

Q: When should the ZTX455STZ be selected instead of direct equivalents?

A: The ZTX455STZ is suitable when applications require higher collector current (1 A versus 600 mA) or higher power dissipation (1 W versus 625 mW) within the 140 V breakdown voltage rating. The transition frequency is lower at 100 MHz, and Vce saturation is higher at 700mV. This part is not a direct replacement but an enhanced alternative for higher-current applications.

Q: Are all substitute parts RoHS compliant?

A: RoHS3 compliance is confirmed for 2N5550TAR, MMBT5550LT1G, and ZTX455STZ. RoHS status is not specified for 2N5550TA and 2N5550TFR in the provided data. All parts maintain REACH unaffected status.

Q: What is the operating temperature range for each substitute part?

A: The 2N5550RLRPG, MMBT5550LT1G, and ZTX455STZ operate from -55°C to 150°C. The 2N5550TA, 2N5550TAR, and 2N5550TFR specify a maximum operating temperature of 150°C without a stated minimum. The ZTX455STZ extends the upper limit to 200°C.

Q: Can the 2N5550RLRPG be used in new designs?

A: No. The 2N5550RLRPG is classified as obsolete. New designs should use active product alternatives: 2N5550TA, 2N5550TAR, or 2N5550TFR for through-hole applications, or MMBT5550LT1G for surface-mount applications.

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