2N5550RLRAG Equivalent & Substitute Parts

Part Overview

The 2N5550RLRAG is an NPN bipolar junction transistor manufactured by onsemi, rated for 140 V collector-emitter breakdown voltage and 600 mA maximum collector current. This device is packaged in a Through Hole TO-92 (TO-226) configuration and is designed for small-signal switching and amplification applications. The part is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement continuity.

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN	—
Voltage - Collector Emitter Breakdown (Max)	140	V
Current - Collector (Ic) (Max)	600	mA
Power - Max	625	mW
Frequency - Transition	300	MHz
DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 10mA, 5V	—
Vce Saturation (Max) @ Ib, Ic	250mV @ 5mA, 50mA	—
Current - Collector Cutoff (Max)	100	nA
Operating Temperature Range	-55 to 150	°C
Mounting Type	Through Hole	—
Package / Case	TO-226-3, TO-92-3	—

Substitute Part Grouping Explanation

Substitution of the 2N5550RLRAG is determined by electrical and mechanical parameter compatibility. The critical parameters for substitution are:

Transistor Type: NPN configuration
Voltage Rating: Collector-emitter breakdown voltage of 140 V minimum
Current Rating: Collector current capacity of 600 mA minimum
Power Dissipation: Maximum power rating of 625 mW minimum
Frequency Response: Transition frequency of 300 MHz minimum
DC Current Gain: hFE minimum of 60 @ 10mA, 5V
Saturation Characteristics: Vce saturation of 250mV @ 5mA, 50mA
Package Compatibility: Through Hole TO-92 or TO-226 equivalent form factor

Substitute parts are classified into two categories:

Direct Equivalents (2N5550TA, 2N5550TAR, 2N5550TFR): These parts meet or exceed all electrical specifications of the 2N5550RLRAG and maintain identical package form factors. All parameters are matched or superior.

Similar Alternative (ZTX455STZ): This part exceeds the electrical specifications in several parameters (higher current rating, higher power dissipation, extended temperature range) but operates at reduced transition frequency. This part is suitable for applications where the enhanced current and power capabilities are beneficial and frequency requirements are not limiting.

Parameter Comparison

Parameter	2N5550RLRAG (Main)	2N5550TA	2N5550TAR	2N5550TFR	ZTX455STZ
Manufacturer	onsemi	Fairchild Semiconductor	onsemi	Fairchild Semiconductor	Diodes Incorporated
Product Status	Obsolete	Active	Active	Active	Active
Transistor Type	NPN	NPN	NPN	NPN	NPN
Voltage - Collector Emitter Breakdown (Max)	140 V	140 V	140 V	140 V	140 V
Current - Collector (Ic) (Max)	600 mA	600 mA	600 mA	600 mA	1 A
Power - Max	625 mW	625 mW	625 mW	625 mW	1 W
Frequency - Transition	300 MHz	300 MHz	300 MHz	300 MHz	100 MHz
DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 10mA, 5V	60 @ 10mA, 5V	60 @ 10mA, 5V	60 @ 10mA, 5V	100 @ 150mA, 10V
Vce Saturation (Max) @ Ib, Ic	250mV @ 5mA, 50mA	250mV @ 5mA, 50mA	250mV @ 5mA, 50mA	250mV @ 5mA, 50mA	700mV @ 15mA, 150mA
Current - Collector Cutoff (Max)	100 nA	100 nA	100 nA	100 nA	100 nA
Operating Temperature Range	-55 to 150°C	150°C (TJ)	150°C (TJ)	150°C (TJ)	-55 to 200°C
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-226-3, TO-92-3	TO-226-3, TO-92-3	TO-226-3, TO-92-3	TO-226-3, TO-92-3	E-Line-3 (TO-92 compatible)
RoHS Status	Not specified	Not specified	ROHS3 Compliant	Not specified	ROHS3 Compliant
REACH Status	REACH Unaffected	Not specified	REACH Unaffected	Not specified	REACH Unaffected

Engineering Selection Recommendations

For Direct Replacement (Pin-Compatible, Electrically Identical):

The 2N5550TA, 2N5550TAR, and 2N5550TFR are direct substitutes for the 2N5550RLRAG. All three parts maintain identical electrical specifications and package form factors. Selection among these three should be based on:

2N5550TAR (onsemi, Cut Tape packaging): Maintains original manufacturer continuity and includes ROHS3 compliance certification. Recommended for new designs and procurement requiring regulatory compliance documentation.
2N5550TA (Fairchild Semiconductor, Bulk packaging): Provides equivalent electrical performance with active product status. Suitable for applications where manufacturer source diversification is acceptable.
2N5550TFR (Fairchild Semiconductor, Bulk packaging): Functionally equivalent alternative from Fairchild Semiconductor with active product status.

For Enhanced Performance Applications:

The ZTX455STZ offers superior current handling (1 A vs. 600 mA) and power dissipation (1 W vs. 625 mW) with extended operating temperature range (-55 to 200°C). This part is suitable for applications requiring higher current capacity or thermal margin. The reduced transition frequency (100 MHz vs. 300 MHz) must be evaluated against circuit frequency requirements. The E-Line package is mechanically compatible with TO-92 form factor but exhibits different saturation characteristics (700mV vs. 250mV), requiring circuit validation for switching applications.

All substitute parts maintain REACH compliance and EAR99 export classification consistent with the original part.

Frequently Asked Questions (FAQ)

Q: Can 2N5550TA be used as a direct replacement for 2N5550RLRAG?

A: Yes. The 2N5550TA is a direct electrical and mechanical equivalent. All electrical parameters (voltage, current, power, frequency, gain, and saturation characteristics) are identical. The TO-92-3 package is pin-compatible with the original TO-92-3 form factor.

Q: What is the difference between 2N5550TAR and 2N5550TA?

A: Both parts are electrically identical. The primary difference is packaging format: 2N5550TAR is supplied in Cut Tape (CT) format, while 2N5550TA is supplied in Bulk format. The 2N5550TAR includes ROHS3 compliance certification and REACH compliance documentation.

Q: Is ZTX455STZ a suitable replacement for 2N5550RLRAG?

A: ZTX455STZ is a suitable alternative for applications where enhanced current capacity (1 A vs. 600 mA) and power dissipation (1 W vs. 625 mW) are beneficial. However, the transition frequency is reduced (100 MHz vs. 300 MHz), and saturation voltage is higher (700mV vs. 250mV). Circuit validation is required to confirm compatibility, particularly for high-frequency switching or low-saturation-voltage applications.

Q: Are all substitute parts available in the same TO-92 package?

A: The 2N5550TA, 2N5550TAR, and 2N5550TFR are all supplied in TO-92-3 (TO-226-3) packages with identical pin configurations. The ZTX455STZ is supplied in an E-Line-3 package, which is mechanically compatible with TO-92 form factor and maintains the same three-lead through-hole configuration.

Q: What compliance certifications should I verify for new designs?

A: For new designs, verify ROHS3 compliance and REACH compliance status. The 2N5550TAR and ZTX455STZ include explicit ROHS3 compliance certification. All substitute parts maintain REACH Unaffected status, consistent with the original 2N5550RLRAG.

Q: Can I use ZTX455STZ in a circuit designed for 2N5550RLRAG without modification?

A: ZTX455STZ requires circuit evaluation before use. While voltage and current ratings are compatible, the higher saturation voltage (700mV vs. 250mV) and lower transition frequency (100 MHz vs. 300 MHz) may affect circuit performance. Applications requiring precise saturation characteristics or high-frequency operation must be validated with the ZTX455STZ specifications.

Q: What is the inventory status of substitute parts?

A: 2N5550TA: 34,767 pcs in stock. 2N5550TAR: 47,300 pcs in stock. 2N5550TFR: 22,400 pcs in stock. ZTX455STZ: 2,210 pcs in stock. All substitute parts are active products with confirmed availability.

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