2N5550-AP Equivalent & Substitute Parts

Part Overview

The 2N5550-AP is a Bipolar (BJT) NPN transistor manufactured by Micro Commercial Co, rated for 140 V collector-emitter breakdown voltage and 600 mA maximum collector current. This device is packaged in a TO-92 through-hole configuration and is classified as obsolete. Due to its obsolete product status, equivalent substitute parts from active manufacturers are necessary to maintain design continuity and ensure ongoing component availability for production and repair applications.

Substiute Parts

2N5550-AP

Micro Commercial CoIn Stock: 11502N5550-AP Datasheet

Current PartRFQ

2N5550TAR

onsemiIn Stock: 473892N5550TAR Datasheet

DirectRFQ

2N5550TA

Fairchild SemiconductorIn Stock: 348502N5550TA Datasheet

Parametric EquivalentRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the 2N5550-AP are identified based on electrical and mechanical parameter equivalence. The substitution criteria are strictly defined by the following parameters:

• Transistor Type: NPN configuration
• Current - Collector (Ic) (Max): 600 mA
• Voltage - Collector Emitter Breakdown (Max): 140 V
• Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
• Power - Max: 625 mW
• Frequency - Transition: 300MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (TO-226AA) Formed Leads

All identified substitute parts maintain identical electrical specifications and mechanical compatibility with the original 2N5550-AP device. Substitutes are classified as either direct manufacturer equivalents or parametric equivalents based on manufacturer designation and product status.

Parameter Comparison

Engineering Selection Recommendations

2N5550TAR (onsemi) is the primary substitute for the 2N5550-AP. This part is manufactured by onsemi, an active semiconductor manufacturer, and maintains full electrical and mechanical parameter equivalence. The 2N5550TAR is ROHS3 compliant and carries active product status, ensuring long-term availability and supply chain continuity. The device is supplied in Cut Tape (CT) packaging format.

2N5550TA (Fairchild Semiconductor) is a parametric equivalent substitute. This part maintains identical electrical specifications and mechanical compatibility with the 2N5550-AP. The 2N5550TA is supplied in Bulk packaging format and carries active product status. RoHS compliance status is not specified for this variant.

Both substitute parts are suitable for direct replacement in applications where the 2N5550-AP was originally specified. Selection between 2N5550TAR and 2N5550TA should be based on packaging requirements, supplier availability, and procurement preferences.

Frequently Asked Questions (FAQ)

Q: Can the 2N5550TAR be used as a direct replacement for the 2N5550-AP?

A: Yes. The 2N5550TAR maintains identical electrical parameters including collector current (600 mA), collector-emitter breakdown voltage (140 V), saturation voltage, current gain, power dissipation (625 mW), and transition frequency (300MHz). Both devices use the same TO-92-3 package with formed leads and are rated for the same operating temperature range. The 2N5550TAR is manufactured by onsemi and carries active product status.

Q: What is the difference between 2N5550TAR and 2N5550TA?

A: Both parts are parametric equivalents with identical electrical specifications. The primary differences are manufacturer (onsemi versus Fairchild Semiconductor) and packaging format (Cut Tape versus Bulk). Both maintain full compatibility with the 2N5550-AP electrical and mechanical requirements.

Q: Are there any packaging considerations when substituting these parts?

A: All three parts use the TO-92-3 (TO-226AA) package with formed leads. The 2N5550TAR is supplied in Cut Tape (CT) format, while the 2N5550TA is supplied in Bulk format. Both packaging formats are compatible with standard through-hole assembly processes. Packaging selection should be based on production volume and assembly equipment compatibility.

Q: Is the 2N5550-AP still available for purchase?

A: The 2N5550-AP is classified as obsolete. However, 47,300 units of the 2N5550TAR and 34,767 units of the 2N5550TA are currently in stock. These active alternatives provide equivalent functionality and ensure design continuity.

Q: Are the substitute parts RoHS compliant?

A: The 2N5550TAR is ROHS3 compliant. The 2N5550-AP is also ROHS3 compliant. RoHS compliance status for the 2N5550TA is not specified in available documentation.

Q: What are the key electrical parameters that define substitution compatibility?

A: Substitution compatibility is determined by the following parameters: NPN transistor type, 600 mA maximum collector current, 140 V collector-emitter breakdown voltage, 250mV saturation voltage at specified bias conditions, 100nA collector cutoff current, 60 minimum DC current gain at 10mA collector current and 5V collector-emitter voltage, 625 mW maximum power dissipation, and 300MHz transition frequency. All substitute parts maintain these specifications.