2N5460 JFET P-Channel Transistor: Equivalent & Substitute Parts

Part Overview

The 2N5460 is a P-Channel JFET (Junction Field-Effect Transistor) rated for 40 V breakdown voltage, designed for through-hole mounting in TO-92 packaging. This component is classified as obsolete in its original onsemi manufacture, making equivalent substitutes necessary for ongoing production and maintenance applications. The 2N5460 serves in analog switching, amplification, and signal conditioning circuits where P-Channel JFET characteristics are required.

Substiute Parts

2N5460
onsemiIn Stock: 21572N5460 Datasheet
2N5460
Current Part
2N5460
NTE Electronics, IncIn Stock: 21192N5460 Datasheet
2N5460
Similar

Key Parameters

Parameter Value Unit
FET Type P-Channel
Voltage - Breakdown (V(BR)GSS) 40 V
Current - Drain (Idss) @ Vds (Vgs=0) 1 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id 750 mV @ 1 µA
Input Capacitance (Ciss) (Max) @ Vds 7 pF @ 15 V
Power - Max 350 mW
Operating Temperature Range -65 to 135 °C (TJ)
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3

Substitute Part Grouping Explanation

Substitution of the 2N5460 is determined by strict equivalence across the following electrical and mechanical parameters:

  • FET Channel Type: P-Channel (mandatory match)
  • Voltage Rating: V(BR)GSS = 40 V (minimum requirement)
  • Drain Current (Idss): 1 mA @ 15 V (functional specification)
  • Gate Cutoff Voltage (VGS off): 750 mV @ 1 µA (threshold specification)
  • Input Capacitance (Ciss): 7 pF @ 15 V (signal integrity parameter)
  • Package Type: TO-92-3 through-hole configuration (mechanical compatibility)

The NTE Electronics 2N5460 substitute meets all electrical specifications and maintains identical package compatibility. Substitution is valid when all parameters remain within the specified tolerances and the package footprint is preserved.

Parameter Comparison

Parameter onsemi 2N5460 (Main Part) NTE Electronics 2N5460 (Substitute) Match Status
FET Type P-Channel P-Channel ✓ Equivalent
Voltage - Breakdown (V(BR)GSS) 40 V 40 V ✓ Equivalent
Current - Drain (Idss) @ Vds (Vgs=0) 1 mA @ 15 V 1 mA @ 15 V ✓ Equivalent
Voltage - Cutoff (VGS off) @ Id 750 mV @ 1 µA 750 mV @ 1 µA ✓ Equivalent
Input Capacitance (Ciss) (Max) @ Vds 7 pF @ 15 V 7 pF @ 15 V ✓ Equivalent
Power - Max 350 mW 310 mW ⚠ Substitute rated lower
Operating Temperature Range -65 to 135 °C -65 to 150 °C ✓ Substitute exceeds range
Package / Case TO-226-3, TO-92-3 TO-226-3, TO-92-3 ✓ Equivalent
RoHS Status RoHS non-compliant ROHS3 Compliant ✓ Substitute compliant

Engineering Selection Recommendations

Primary Substitute: NTE Electronics 2N5460

The NTE Electronics 2N5460 is a direct electrical equivalent with identical electrical specifications across all critical parameters. Key selection factors:

  • Product Status: NTE part is Active, whereas the onsemi original is Obsolete. The active status ensures continued availability and supply chain reliability.
  • Compliance: The NTE substitute is ROHS3 Compliant, addressing regulatory requirements for new designs and manufacturing environments where RoHS compliance is mandated.
  • Power Rating: The NTE substitute is rated at 310 mW versus the original 350 mW. This represents a 11% reduction in maximum power dissipation. Selection of this substitute is appropriate for applications operating within the 310 mW thermal envelope.
  • Temperature Range: The NTE substitute extends the upper operating temperature to 150 °C, providing additional thermal margin compared to the original 135 °C specification.
  • Package Compatibility: Both parts use identical TO-92-3 through-hole packaging, ensuring direct PCB footprint compatibility without layout modifications.

Frequently Asked Questions (FAQ)

Q: Can the NTE Electronics 2N5460 be used as a direct replacement for the onsemi 2N5460?

A: Yes, for applications where power dissipation does not exceed 310 mW. All electrical parameters—breakdown voltage, drain current, gate cutoff voltage, and input capacitance—are identical. The package footprint is identical, permitting direct substitution without PCB redesign.

Q: What is the significance of the 40 mW power rating difference?

A: The NTE substitute is rated at 310 mW maximum power dissipation versus the original 350 mW. Applications must ensure that actual power dissipation remains below 310 mW. For circuits operating near the original 350 mW specification, thermal analysis is required to confirm the substitute remains within safe operating limits.

Q: Are there package compatibility concerns?

A: No. Both the onsemi and NTE versions use TO-92-3 (TO-226-3) through-hole packaging. Pin configuration, lead spacing, and mounting footprint are identical. No PCB modifications are necessary.

Q: Does the NTE substitute meet modern compliance requirements?

A: The NTE Electronics 2N5460 is ROHS3 Compliant, meeting current regulatory standards for hazardous substance restrictions. The original onsemi part is RoHS non-compliant. For new designs or manufacturing environments with RoHS mandates, the NTE substitute is the appropriate choice.

Q: What is the temperature operating range difference?

A: The NTE substitute operates from -65 °C to 150 °C, extending 15 °C above the original specification of -65 °C to 135 °C. This provides additional thermal margin in high-temperature applications.

Q: Are there any electrical performance differences?

A: No. All electrical parameters—V(BR)GSS, Idss, VGS off, and Ciss—are identical between the two parts. Functional performance in the circuit is equivalent.

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