2N5457G JFET N-Channel Transistor Equivalent & Substitute Parts

Part Overview

The 2N5457G is an N-Channel JFET transistor manufactured by onsemi, designed for through-hole applications in the TO-92 package. This device operates at 25 V breakdown voltage with a maximum power dissipation of 310 mW. The 2N5457G is classified as obsolete, making identification of suitable substitute components essential for ongoing design support and production continuity. Equivalent parts must maintain compatibility with the original electrical specifications and physical package requirements.

Substiute Parts

2N5457G

onsemiIn Stock: 7702N5457G Datasheet

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J109

onsemiIn Stock: 2350J109 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the 2N5457G is determined by the following critical parameters:

• FET Type: Must be N-Channel JFET
• Voltage Rating: Breakdown voltage (V(BR)GSS) and drain-source voltage (Vdss) must be 25 V or greater
• Package Compatibility: Through-hole TO-92 or TO-226 package required
• Electrical Characteristics: Drain current (Idss), gate-source cutoff voltage (VGS off), and power dissipation must support the intended application

The J109 qualifies as a direct substitute based on matching FET type, voltage ratings, package configuration, and through-hole mounting. Both devices operate within the same voltage class and package family, enabling direct replacement in circuit designs.

Parameter Comparison

Engineering Selection Recommendations

The J109 is the designated substitute for the 2N5457G based on the following criteria:

• Product Status: The J109 is classified as Active, ensuring continued availability and manufacturing support, whereas the 2N5457G is Obsolete.
• Compliance: Both devices maintain REACH Unaffected status and EAR99 classification. The J109 is RoHS3 Compliant, meeting current regulatory requirements.
• Package Compatibility: Both devices utilize the TO-92-3 through-hole package, enabling direct physical replacement without PCB modification.
• Electrical Sufficiency: The J109 meets or exceeds the voltage and power specifications of the 2N5457G, providing equivalent or improved performance margins in most applications.

Selection of the J109 is appropriate for designs requiring continued component availability and regulatory compliance. Circuit validation is necessary to confirm that the higher Idss (40 mA vs. 1 mA) and VGS off (2 V vs. 500 mV) of the J109 are compatible with the intended application parameters.

Frequently Asked Questions (FAQ)

Q: Can the J109 be used as a direct pin-for-pin replacement for the 2N5457G?

A: Yes. Both devices share the same TO-92-3 package pinout and through-hole mounting configuration. Physical replacement requires no PCB modification.

Q: What are the key electrical differences between the 2N5457G and J109?

A: The J109 exhibits significantly higher drain current (Idss = 40 mA vs. 1 mA at Vds = 15 V) and higher gate-source cutoff voltage (VGS off = 2 V vs. 500 mV). The J109 also provides higher power dissipation capability (625 mW vs. 310 mW) and an extended operating temperature range (-55°C to 150°C vs. 135°C maximum).

Q: Are there any circuit design considerations when substituting the J109 for the 2N5457G?

A: Circuit behavior depends on application context. The higher Idss and VGS off of the J109 may alter bias point, gain, and frequency response characteristics. Application-specific validation is required to confirm functional equivalence.

Q: What is the availability status of these components?

A: The 2N5457G is obsolete with limited remaining inventory (737 Pcs). The J109 is actively manufactured by onsemi with substantial inventory availability (2278 Pcs), ensuring long-term supply continuity.

Q: Do both devices meet current regulatory requirements?

A: Both devices maintain REACH Unaffected status. The J109 is RoHS3 Compliant, meeting current environmental and regulatory standards. The 2N5457G compliance status is not specified for RoHS.