2N5457_D26Z JFET N-Channel Equivalent & Substitute Parts

Part Overview

The 2N5457_D26Z is an N-Channel JFET transistor manufactured by onsemi, designed for general-purpose switching and amplification applications. It features a 25 V breakdown voltage rating and 625 mW maximum power dissipation in a TO-92-3 through-hole package. The part is currently classified as obsolete, making identification of functionally equivalent alternatives necessary for ongoing design support and component procurement.

Substiute Parts

2N5457_D26Z

onsemiIn Stock: 9102N5457_D26Z Datasheet

Current PartRFQ

2N5457

Central Semiconductor CorpIn Stock: 105422N5457 Datasheet

DirectRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the 2N5457_D26Z is determined by matching the following critical electrical and mechanical parameters:

• FET Type: N-Channel configuration
• Voltage - Breakdown (V(BR)GSS): 25 V minimum
• Current - Drain (Idss) @ Vds (Vgs=0): 1 mA @ 15 V
• Voltage - Cutoff (VGS off) @ Id: 500 mV @ 10 nA
• Input Capacitance (Ciss): 7 pF @ 15 V maximum
• Package / Case: TO-92-3 through-hole configuration
• Mounting Type: Through Hole

The 2N5457 from Central Semiconductor Corp meets all specified electrical parameters and package requirements, establishing it as a direct functional equivalent.

Parameter Comparison

Engineering Selection Recommendations

The 2N5457 from Central Semiconductor Corp is an active product with confirmed availability (10,490 pcs in stock), whereas the original 2N5457_D26Z is obsolete. Both parts share identical electrical specifications for the critical parameters governing JFET operation: breakdown voltage, drain current, cutoff voltage, and input capacitance. Both are packaged in TO-92-3 through-hole configuration with matching pinout.

The Central Semiconductor Corp variant operates across a wider temperature range (-65°C to 150°C versus -55°C to 150°C) and carries REACH Unaffected status. The maximum power rating differs (310 mW versus 625 mW); applications requiring the full 625 mW dissipation capability must account for this reduction in thermal headroom.

Both parts carry REACH Unaffected and EAR99 ECCN classifications. The Central Semiconductor variant is RoHS non-compliant, consistent with legacy JFET technology.

Frequently Asked Questions (FAQ)

Q: Can the 2N5457 from Central Semiconductor Corp directly replace the 2N5457_D26Z?

A: Yes, for applications within the 310 mW power dissipation limit. All electrical parameters match exactly: 25 V breakdown voltage, 1 mA drain current at 15 V, 500 mV cutoff voltage, and 7 pF input capacitance. The TO-92-3 package and pinout are identical.

Q: What is the impact of the lower power rating (310 mW vs. 625 mW)?

A: The substitute part has a lower maximum power dissipation specification. Designs operating near the original 625 mW limit must be re-evaluated to ensure the substitute remains within its 310 mW thermal envelope.

Q: Are there package compatibility concerns?

A: No. Both parts use the TO-92-3 (TO-226AA) through-hole package with identical lead configuration and spacing.

Q: Does the wider operating temperature range of the substitute affect compatibility?

A: No. The substitute's -65°C to 150°C range encompasses the original -55°C to 150°C specification, providing equal or better temperature performance.

Q: What compliance differences exist between the two parts?

A: The original 2N5457_D26Z carries no RoHS status designation. The Central Semiconductor Corp 2N5457 is explicitly RoHS non-compliant. Both are REACH Unaffected and classified as EAR99.