2N5401_S00Z Equivalent & Substitute Parts

Part Overview

The 2N5401_S00Z is a Bipolar (BJT) Transistor with PNP polarity manufactured by onsemi. This through-hole component operates at 150 V collector-emitter breakdown voltage with a maximum collector current of 600 mA and power dissipation of 625 mW. The device is packaged in TO-92-3 (TO-226AA) configuration and features a transition frequency of 400 MHz.

The 2N5401_S00Z is classified as Obsolete. Identification of equivalent and substitute parts is necessary to maintain design continuity and ensure component availability for production and repair applications.

Key Parameters

Parameter	Value	Unit
Transistor Type	PNP	—
Current - Collector (Ic) (Max)	600	mA
Voltage - Collector Emitter Breakdown (Max)	150	V
Vce Saturation (Max) @ Ib, Ic	500mV @ 5mA, 50mA	—
DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 10mA, 5V	—
Power - Max	625	mW
Frequency - Transition	400	MHz
Operating Temperature	-55 to 150	°C (TJ)
Mounting Type	Through Hole	—
Package / Case	TO-92-3 (TO-226AA)	—

Substitute Part Grouping Explanation

Substitution of the 2N5401_S00Z is determined by electrical and mechanical parameter equivalence. The following parameters establish substitution validity:

Transistor Polarity: PNP configuration
Maximum Collector Current: 600 mA
Collector-Emitter Breakdown Voltage: 150 V
Saturation Voltage Characteristics: 500mV @ 5mA, 50mA
DC Current Gain (hFE): Minimum 60 @ 10mA, 5V
Maximum Power Dissipation: 625 mW
Transition Frequency: 400 MHz
Operating Temperature Range: -55°C to 150°C
Package Configuration: TO-92-3 through-hole mounting

The 2N5401YBU meets all electrical and mechanical specifications required for direct substitution. Both devices share identical base product designation (2N5401) and are manufactured by onsemi.

Parameter Comparison

Parameter	2N5401_S00Z (Main)	2N5401YBU (Substitute)	Match
Manufacturer	onsemi	onsemi	Yes
Transistor Type	PNP	PNP	Yes
Current - Collector (Ic) (Max)	600 mA	600 mA	Yes
Voltage - Collector Emitter Breakdown (Max)	150 V	150 V	Yes
Vce Saturation (Max) @ Ib, Ic	500mV @ 5mA, 50mA	500mV @ 5mA, 50mA	Yes
DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 10mA, 5V	60 @ 10mA, 5V	Yes
Power - Max	625 mW	625 mW	Yes
Frequency - Transition	400 MHz	400 MHz	Yes
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	Yes
Mounting Type	Through Hole	Through Hole	Yes
Package / Case	TO-92-3 (TO-226AA)	TO-92-3 (TO-226AA)	Yes
Product Status	Obsolete	Active	Compatible
REACH Status	REACH Unaffected	REACH Unaffected	Yes
ECCN	EAR99	EAR99	Yes
HTSUS	8541.21.0075	8541.21.0075	Yes

Engineering Selection Recommendations

The 2N5401YBU is a direct electrical and mechanical equivalent to the 2N5401_S00Z. Selection of the 2N5401YBU is supported by the following factors:

Product Status: The 2N5401YBU maintains Active product status, ensuring ongoing manufacturer support and availability. The 2N5401_S00Z is Obsolete, making the 2N5401YBU the appropriate choice for new designs and component replenishment.

Regulatory Compliance: Both devices maintain identical REACH and ECCN classifications (REACH Unaffected, EAR99). The 2N5401YBU carries RoHS3 Compliance certification, meeting current environmental and hazardous substance restrictions.

Electrical Equivalence: All critical electrical parameters—collector current, breakdown voltage, saturation characteristics, current gain, power dissipation, and transition frequency—are identical between the two devices.

Mechanical Compatibility: Both devices utilize identical TO-92-3 through-hole packaging, ensuring direct pin-for-pin compatibility in existing circuit board layouts.

Inventory Availability: The 2N5401YBU is available in significantly higher quantities (20,300 pcs) compared to the obsolete 2N5401_S00Z (801 pcs), supporting production continuity.

Frequently Asked Questions (FAQ)

Q: Can the 2N5401YBU be used as a direct replacement for the 2N5401_S00Z in existing designs?

A: Yes. The 2N5401YBU is electrically and mechanically equivalent to the 2N5401_S00Z. All electrical parameters, including collector current, breakdown voltage, saturation characteristics, current gain, power dissipation, and transition frequency, are identical. The TO-92-3 package configuration is unchanged, enabling direct pin-for-pin substitution.

Q: What is the primary difference between the 2N5401_S00Z and 2N5401YBU?

A: The 2N5401_S00Z is classified as Obsolete, while the 2N5401YBU maintains Active product status. Both devices are manufactured by onsemi and share identical electrical and mechanical specifications. The 2N5401YBU is the recommended choice for new applications and component replenishment due to ongoing manufacturer support and availability.

Q: Are there any compliance or certification differences between these devices?

A: Both devices maintain identical REACH and ECCN classifications (REACH Unaffected, EAR99). The 2N5401YBU carries RoHS3 Compliance certification. Both devices share the same HTSUS code (8541.21.0075).

Q: Does the TO-92-3 package configuration remain the same for both parts?

A: Yes. Both the 2N5401_S00Z and 2N5401YBU utilize the TO-92-3 (TO-226AA) through-hole package. Pin configuration and mechanical dimensions are identical, ensuring compatibility with existing printed circuit board layouts.

Q: What are the key electrical parameters that define substitution eligibility?

A: Substitution eligibility is determined by matching the following parameters: PNP transistor polarity, 600 mA maximum collector current, 150 V collector-emitter breakdown voltage, 500mV saturation voltage at specified bias conditions, 60 minimum DC current gain at 10mA and 5V, 625 mW maximum power dissipation, 400 MHz transition frequency, and -55°C to 150°C operating temperature range.

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