2N5401G Equivalent & Substitute Parts

Part Overview

The 2N5401G is a PNP bipolar junction transistor manufactured by onsemi, rated for 150 V collector-emitter breakdown voltage and 600 mA maximum collector current in a Through Hole TO-92 package. This device is classified as Obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement continuity. The 2N5401G serves general-purpose switching and amplification applications requiring PNP polarity in legacy through-hole designs.

Substiute Parts

2N5401G
onsemiIn Stock: 11132N5401G Datasheet
2N5401G
Current Part
2N5401YBU
onsemiIn Stock: 203482N5401YBU Datasheet
2N5401YBU
Direct
MMBT5401LT1G
onsemiIn Stock: 305308MMBT5401LT1G Datasheet
MMBT5401LT1G
Similar
ZTX795A
Diodes IncorporatedIn Stock: 1401ZTX795A Datasheet
ZTX795A
Similar
ZTX795ASTZ
Diodes IncorporatedIn Stock: 30404ZTX795ASTZ Datasheet
ZTX795ASTZ
Similar

Key Parameters

Parameter Value Unit
Transistor Type PNP
Voltage - Collector Emitter Breakdown (Max) 150 V
Current - Collector (Ic) (Max) 600 mA
Power - Max 625 mW
Frequency - Transition 300 MHz
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 50mA
Operating Temperature Range -55 to 150 °C
Mounting Type Through Hole
Package / Case TO-92-3, TO-226-3

Substitute Part Grouping Explanation

Substitution of the 2N5401G is determined by strict electrical and mechanical compatibility within the following criteria:

Primary Substitution Criteria:

  • Transistor Type: PNP polarity required
  • Voltage - Collector Emitter Breakdown: minimum 150 V
  • Current - Collector (Ic) (Max): minimum 600 mA
  • Power - Max: minimum 625 mW
  • DC Current Gain (hFE): minimum 60 @ 10mA, 5V
  • Vce Saturation: maximum 500mV @ 5mA, 50mA
  • Operating Temperature Range: -55°C to 150°C minimum
  • Mounting Type: Through Hole

Secondary Compatibility Considerations:

  • Package form factor (TO-92 through-hole preferred for direct mechanical replacement)
  • Frequency - Transition: 300 MHz minimum preferred for signal integrity
  • Current - Collector Cutoff: 50nA maximum preferred

Substitutes are grouped into two categories:

Direct Equivalent (Same Base Product Number): 2N5401YBU meets all primary criteria with identical electrical specifications and enhanced frequency performance (400 MHz). Active product status ensures long-term availability.

Similar Functional Equivalent (Different Manufacturer): ZTX795A and ZTX795ASTZ from Diodes Incorporated meet primary electrical criteria with trade-offs in specific parameters (140 V breakdown voltage, 500 mA collector current, 100 MHz frequency, 1 W power rating). These devices maintain through-hole mounting and compatible package form factors.

Surface Mount Alternative: MMBT5401LT1G provides electrical equivalence in surface-mount SOT-23-3 package with reduced power rating (300 mW) and collector current (500 mA), suitable only for applications not requiring full 625 mW power dissipation.

Parameter Comparison

Parameter 2N5401G 2N5401YBU MMBT5401LT1G ZTX795A ZTX795ASTZ
Transistor Type PNP PNP PNP PNP PNP
Voltage - Collector Emitter Breakdown (Max) 150 V 150 V 150 V 140 V 140 V
Current - Collector (Ic) (Max) 600 mA 600 mA 500 mA 500 mA 500 mA
Power - Max 625 mW 625 mW 300 mW 1 W 1 W
Frequency - Transition 300 MHz 400 MHz 300 MHz 100 MHz 100 MHz
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 10mA, 5V 60 @ 10mA, 5V 60 @ 10mA, 5V 300 @ 10mA, 2V 300 @ 10mA, 2V
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 50mA 500mV @ 5mA, 50mA 500mV @ 5mA, 50mA 250mV @ 50mA, 500mA 250mV @ 50mA, 500mA
Operating Temperature Range -55 to 150°C -55 to 150°C -55 to 150°C -55 to 200°C -55 to 200°C
Mounting Type Through Hole Through Hole Surface Mount Through Hole Through Hole
Package / Case TO-92-3, TO-226-3 TO-92-3, TO-226-3 SOT-23-3, TO-236-3 E-Line-3 E-Line-3
Product Status Obsolete Active Active Active Active
RoHS Status Not Specified ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant

Engineering Selection Recommendations

For Direct Replacement (Preferred):

The 2N5401YBU is the primary substitute for the 2N5401G. Both devices share the same base product number (2N5401), identical electrical ratings (150 V, 600 mA, 625 mW), and compatible TO-92-3 through-hole packaging. The 2N5401YBU offers superior product status (Active versus Obsolete), ensuring long-term availability and supply chain continuity. The 2N5401YBU exhibits enhanced frequency performance (400 MHz versus 300 MHz), providing improved signal handling capability without compromising any electrical parameter. ROHS3 compliance of the 2N5401YBU meets current environmental regulations, whereas the 2N5401G status is not specified. No circuit modifications are required for this substitution.

For Through-Hole Applications with Extended Temperature Range:

The ZTX795ASTZ and ZTX795A from Diodes Incorporated provide through-hole E-Line packaging compatible with TO-92 footprints. These devices operate across -55°C to 200°C, extending the upper temperature limit by 50°C compared to the 2N5401G. Trade-offs include reduced collector-emitter breakdown voltage (140 V versus 150 V) and collector current (500 mA versus 600 mA), with lower transition frequency (100 MHz versus 300 MHz). These devices are suitable for applications where the 150 V and 600 mA ratings are not fully utilized and extended temperature operation is required. Both ZTX795 variants are ROHS3 compliant and carry Active product status.

For Surface-Mount Applications:

The MMBT5401LT1G provides PNP functionality in SOT-23-3 surface-mount package with identical voltage rating (150 V) and current gain (60 @ 10mA, 5V). This device is limited to 500 mA collector current and 300 mW power dissipation, making it unsuitable for applications requiring the full 600 mA and 625 mW specifications of the 2N5401G. The MMBT5401LT1G is appropriate only for low-power surface-mount designs where current and power requirements do not exceed these reduced ratings. ROHS3 compliance and Active product status ensure regulatory compliance and availability.

Frequently Asked Questions (FAQ)

Q: Can the 2N5401YBU directly replace the 2N5401G without circuit modifications?

A: Yes. The 2N5401YBU is a direct equivalent with identical electrical specifications (150 V, 600 mA, 625 mW) and compatible TO-92-3 through-hole packaging. Both devices share the same base product number. The 2N5401YBU exhibits higher transition frequency (400 MHz versus 300 MHz), which improves performance without requiring any design changes.

Q: What are the key differences between the 2N5401G and ZTX795A?

A: The ZTX795A operates at reduced collector-emitter breakdown voltage (140 V versus 150 V) and collector current (500 mA versus 600 mA). The ZTX795A provides higher power dissipation capability (1 W versus 625 mW) and extended operating temperature range (-55°C to 200°C versus -55°C to 150°C). Transition frequency is lower (100 MHz versus 300 MHz). The ZTX795A is suitable for applications not requiring the full 150 V and 600 mA ratings but benefiting from extended temperature operation.

Q: Is the MMBT5401LT1G suitable as a replacement for the 2N5401G?

A: The MMBT5401LT1G is not a direct replacement due to reduced electrical ratings. Maximum collector current is 500 mA (versus 600 mA) and maximum power dissipation is 300 mW (versus 625 mW). The MMBT5401LT1G is suitable only for applications where these reduced ratings are acceptable. The primary advantage is surface-mount SOT-23-3 packaging, which differs from the through-hole TO-92 form factor of the 2N5401G.

Q: What is the significance of the 2N5401G being classified as Obsolete?

A: Obsolete status indicates the 2N5401G is no longer manufactured and existing inventory is limited. The 2N5401YBU (Active status) provides equivalent functionality with assured long-term availability. Designs using the 2N5401G should transition to the 2N5401YBU to ensure supply chain continuity and avoid future procurement challenges.

Q: Are all substitute parts ROHS3 compliant?

A: The 2N5401YBU, MMBT5401LT1G, ZTX795A, and ZTX795ASTZ are all ROHS3 compliant. The 2N5401G RoHS status is not specified in the provided data. Current environmental regulations favor ROHS3-compliant devices, making the substitute parts suitable for applications subject to these requirements.

Q: Can the ZTX795ASTZ be used in place of the 2N5401G in high-frequency applications?

A: The ZTX795ASTZ has lower transition frequency (100 MHz versus 300 MHz), making it unsuitable for applications requiring the 300 MHz performance of the 2N5401G. The 2N5401YBU is the appropriate choice for high-frequency applications, offering 400 MHz transition frequency with all other specifications matching the 2N5401G.

Q: What packaging considerations apply when substituting the 2N5401G?

A: The 2N5401G uses TO-92-3 through-hole packaging. The 2N5401YBU and ZTX795 variants maintain through-hole compatibility. The MMBT5401LT1G uses SOT-23-3 surface-mount packaging, requiring PCB layout and assembly process changes. Direct mechanical replacement is possible only with 2N5401YBU or ZTX795 variants.

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