2N5401_D28Z Equivalent & Substitute Parts

Part Overview

The 2N5401_D28Z is a PNP bipolar junction transistor (BJT) manufactured by onsemi, rated for 150 V collector-emitter breakdown voltage and 600 mA maximum collector current. This device is packaged in a TO-92-3 through-hole configuration and is suitable for general-purpose switching and amplification applications operating across a temperature range of -55°C to 150°C.

The 2N5401_D28Z carries an obsolete product status. Identifying equivalent substitute parts ensures design continuity and maintains supply chain reliability for applications currently utilizing this component.

Key Parameters

Parameter	Value	Unit
Transistor Type	PNP	—
Current - Collector (Ic) (Max)	600	mA
Voltage - Collector Emitter Breakdown (Max)	150	V
Vce Saturation (Max) @ Ib, Ic	500 mV @ 5 mA, 50 mA	—
DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 10 mA, 5 V	—
Power - Max	625	mW
Frequency - Transition	400	MHz
Operating Temperature Range	-55 to 150	°C (TJ)
Mounting Type	Through Hole	—
Package / Case	TO-92-3 (TO-226AA)	—

Substitute Part Grouping Explanation

Substitution of the 2N5401_D28Z is determined by electrical and mechanical parameter equivalence. The following criteria establish valid substitution:

Electrical Parameters (Must Match):

Transistor Type: PNP
Maximum Collector Current (Ic): 600 mA
Maximum Collector-Emitter Breakdown Voltage: 150 V
Vce Saturation characteristics: 500 mV @ 5 mA, 50 mA
Minimum DC Current Gain (hFE): 60 @ 10 mA, 5 V
Maximum Power Dissipation: 625 mW
Transition Frequency: 400 MHz
Operating Temperature Range: -55°C to 150°C

Mechanical Parameters (Must Match):

Mounting Type: Through Hole
Package / Case: TO-92-3 (TO-226AA) Formed Leads

Substitute parts must satisfy all electrical and mechanical parameters to ensure functional and physical compatibility within existing circuit designs and printed circuit board layouts.

Parameter Comparison

Parameter	2N5401_D28Z (Main)	2N5401YTA (Substitute)	Match
Manufacturer	onsemi	onsemi	Yes
Category	Transistors, Bipolar (BJT)	Transistors, Bipolar (BJT)	Yes
Transistor Type	PNP	PNP	Yes
Current - Collector (Ic) (Max)	600 mA	600 mA	Yes
Voltage - Collector Emitter Breakdown (Max)	150 V	150 V	Yes
Vce Saturation (Max) @ Ib, Ic	500 mV @ 5 mA, 50 mA	500 mV @ 5 mA, 50 mA	Yes
DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 10 mA, 5 V	60 @ 10 mA, 5 V	Yes
Power - Max	625 mW	625 mW	Yes
Frequency - Transition	400 MHz	400 MHz	Yes
Operating Temperature Range	-55°C to 150°C (TJ)	-55°C to 150°C (TJ)	Yes
Mounting Type	Through Hole	Through Hole	Yes
Package / Case	TO-92-3 (TO-226AA)	TO-92-3 (TO-226AA)	Yes
Base Product Number	2N5401	2N5401	Yes
REACH Status	REACH Unaffected	REACH Unaffected	Yes
ECCN	EAR99	EAR99	Yes
HTSUS	8541.21.0075	8541.21.0075	Yes
Product Status	Obsolete	Active	Different
Packaging Type	—	Cut Tape (CT)	Different
RoHS Status	—	ROHS3 Compliant	Different

Engineering Selection Recommendations

The 2N5401YTA is a direct electrical and mechanical equivalent to the 2N5401_D28Z. Both devices share identical electrical specifications across all critical parameters: collector current rating, breakdown voltage, saturation characteristics, current gain, power dissipation, transition frequency, and operating temperature range. Both are packaged in TO-92-3 through-hole configuration, ensuring physical compatibility with existing circuit board layouts.

The primary distinction between these parts is product status and compliance certification. The 2N5401_D28Z is classified as obsolete, while the 2N5401YTA maintains active product status from onsemi. The 2N5401YTA carries ROHS3 compliance certification, meeting current environmental and regulatory requirements for new designs and manufacturing processes.

For applications requiring component replacement or design updates, the 2N5401YTA is the appropriate selection due to its active availability and regulatory compliance. The electrical performance and physical form factor ensure seamless integration into circuits originally designed for the 2N5401_D28Z.

Frequently Asked Questions (FAQ)

Q: Can the 2N5401YTA be used as a direct replacement for the 2N5401_D28Z?

A: Yes. The 2N5401YTA meets all electrical and mechanical specifications of the 2N5401_D28Z. Both devices are PNP transistors with identical ratings for collector current (600 mA), breakdown voltage (150 V), saturation characteristics, current gain, power dissipation, and operating temperature range. Both use TO-92-3 through-hole packaging.

Q: What is the difference between the 2N5401_D28Z and 2N5401YTA?

A: The primary differences are product status and packaging format. The 2N5401_D28Z is obsolete, while the 2N5401YTA is an active product. The 2N5401YTA is supplied in Cut Tape (CT) packaging and carries ROHS3 compliance certification. Electrically and mechanically, both parts are equivalent.

Q: Are there any compatibility concerns when substituting the 2N5401YTA for the 2N5401_D28Z?

A: No compatibility concerns exist. The TO-92-3 package dimensions and pin configuration are identical. The electrical characteristics match across all specified parameters, ensuring functional equivalence in circuit applications.

Q: Does the 2N5401YTA meet current regulatory requirements?

A: Yes. The 2N5401YTA is ROHS3 compliant and carries REACH Unaffected status, meeting current environmental and regulatory standards for electronic components.

Q: What packaging options are available for the 2N5401 series?

A: The 2N5401_D28Z was supplied in standard packaging, while the 2N5401YTA is available in Cut Tape (CT) format. Both use the TO-92-3 through-hole package configuration.

Q: Can the 2N5401YTA be used in high-temperature applications?

A: Yes. The 2N5401YTA operates across the temperature range of -55°C to 150°C (junction temperature), matching the specifications of the 2N5401_D28Z and supporting applications requiring extended temperature operation.

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