2N5366 Equivalent & Substitute Parts

Part Overview

The 2N5366 is a PNP bipolar junction transistor manufactured by onsemi, rated for 40 V collector-emitter breakdown voltage and 500 mA maximum collector current in a TO-92-3 through-hole package. This device is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and production continuity. The 625 mW power dissipation rating and -55°C to 150°C operating temperature range define its application envelope in general-purpose switching and amplification circuits.

Key Parameters

Parameter	Value	Unit
Transistor Type	PNP	—
Collector Current (Max)	500	mA
Collector-Emitter Breakdown Voltage (Max)	40	V
Power Dissipation (Max)	625	mW
Operating Temperature Range	-55 to 150	°C
Package Type	TO-92-3	—
Mounting Type	Through Hole	—
DC Current Gain (hFE Min)	100	—

Substitute Part Grouping Explanation

Substitution of the 2N5366 is determined by electrical and mechanical compatibility within the following criteria:

Mandatory Compatibility Parameters:

Transistor type must be PNP
Package must be TO-92-3 through-hole configuration
Collector-emitter breakdown voltage must equal or exceed 40 V
Maximum collector current must equal or exceed 500 mA
Power dissipation must equal or exceed 625 mW
Operating temperature range must encompass -55°C to 150°C
DC current gain (hFE) must meet or exceed 100 at specified conditions

Substitution Categories:

Direct Substitute (2N4403BU): Meets all mandatory parameters with identical 40 V breakdown voltage and 625 mW power rating. Collector current rating of 600 mA exceeds the 500 mA requirement. Active product status ensures continued availability.

Similar Substitute (KSP2907ACTA): Exceeds mandatory parameters with 60 V breakdown voltage and 600 mA collector current. Provides enhanced voltage margin for applications requiring higher transient protection. Active product status and RoHS3 compliance support modern manufacturing requirements.

Parameter Comparison

Parameter	2N5366	2N4403BU	KSP2907ACTA
Manufacturer	onsemi	Fairchild Semiconductor	onsemi
Product Status	Obsolete	Active	Active
Transistor Type	PNP	PNP	PNP
Collector Current (Max)	500 mA	600 mA	600 mA
Collector-Emitter Breakdown Voltage (Max)	40 V	40 V	60 V
Vce Saturation (Max)	1 V @ 30mA, 300mA	750 mV @ 50mA, 500mA	1.6 V @ 50mA, 500mA
DC Current Gain (hFE Min)	100 @ 50mA, 1V	100 @ 150mA, 2V	100 @ 150mA, 10V
Power Dissipation (Max)	625 mW	625 mW	625 mW
Frequency - Transition	—	200 MHz	200 MHz
Operating Temperature Range	-55 to 150°C	-55 to 150°C	-55 to 150°C
Package / Case	TO-92-3	TO-92-3	TO-92-3
Mounting Type	Through Hole	Through Hole	Through Hole
REACH Status	REACH Unaffected	—	REACH Unaffected
RoHS Status	—	—	ROHS3 Compliant

Engineering Selection Recommendations

2N4403BU Selection Criteria:

The 2N4403BU is the direct electrical equivalent for applications requiring exact parameter matching to the 2N5366. Both devices share identical 40 V breakdown voltage and 625 mW power dissipation specifications. The 2N4403BU's active product status and higher collector current rating (600 mA versus 500 mA) provide design margin without requiring circuit modification. This substitute is suitable for designs where the 40 V voltage specification is a hard requirement and where Fairchild Semiconductor component qualification is acceptable.

KSP2907ACTA Selection Criteria:

The KSP2907ACTA is a superior substitute for applications where enhanced voltage margin is beneficial. The 60 V breakdown voltage provides 50% additional transient protection compared to the 2N5366. Active product status, RoHS3 compliance, and onsemi manufacturing continuity support long-term supply chain stability. This substitute is appropriate for designs where voltage headroom can be utilized and where modern environmental compliance certifications are required. The higher Vce saturation voltage (1.6 V versus 1 V) must be evaluated in saturation-mode switching applications.

Both substitutes maintain identical TO-92-3 through-hole packaging, operating temperature range, and DC current gain specifications, ensuring direct mechanical and thermal compatibility with existing PCB layouts and thermal management designs.

Frequently Asked Questions (FAQ)

Q: Can the 2N4403BU directly replace the 2N5366 without circuit modification?

A: Yes. The 2N4403BU meets all electrical and mechanical specifications of the 2N5366. Identical breakdown voltage (40 V), power dissipation (625 mW), operating temperature range (-55°C to 150°C), and TO-92-3 package configuration enable direct substitution. The higher collector current rating (600 mA) provides additional design margin.

Q: What is the primary difference between the 2N4403BU and KSP2907ACTA substitutes?

A: The KSP2907ACTA features a 60 V collector-emitter breakdown voltage compared to 40 V for both the 2N5366 and 2N4403BU. This 50% voltage increase provides enhanced protection against transient overvoltage conditions. The KSP2907ACTA also carries RoHS3 compliance certification, whereas the 2N4403BU does not specify RoHS status.

Q: Are there any saturation voltage differences that affect circuit performance?

A: Yes. The 2N5366 exhibits 1 V saturation voltage at 30 mA base current and 300 mA collector current. The 2N4403BU shows 750 mV at 50 mA base current and 500 mA collector current. The KSP2907ACTA exhibits 1.6 V at 50 mA base current and 500 mA collector current. Applications operating in saturation mode must account for these differences in voltage drop calculations.

Q: Is the TO-92-3 package identical across all three devices?

A: Yes. All three devices use the TO-92-3 (TO-226AA) through-hole package with identical lead configuration and spacing. Direct PCB layout compatibility is maintained without modification.

Q: Why is the 2N5366 classified as obsolete?

A: The 2N5366 is no longer in active production by onsemi. The 2N4403BU and KSP2907ACTA represent active alternatives that fulfill the same functional requirements with equivalent or enhanced electrical specifications.

Q: Which substitute is recommended for new designs?

A: Selection depends on application requirements. For designs requiring exact parameter matching and Fairchild Semiconductor qualification, use the 2N4403BU. For designs benefiting from higher voltage rating and modern environmental compliance, use the KSP2907ACTA. Both are active products with established supply chains.

Q: Do the substitute parts have the same DC current gain specifications?

A: All three devices specify a minimum DC current gain (hFE) of 100, but at different operating points. The 2N5366 specifies hFE at 50 mA collector current and 1 V Vce. The 2N4403BU and KSP2907ACTA specify hFE at 150 mA collector current and higher Vce values (2 V and 10 V respectively). Circuit designs relying on specific hFE values at particular operating points must account for these measurement condition differences.

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